ATE555423T1 - Zusammensetzung und verfahren zum entfernen von ätzresten - Google Patents

Zusammensetzung und verfahren zum entfernen von ätzresten

Info

Publication number
ATE555423T1
ATE555423T1 AT03754886T AT03754886T ATE555423T1 AT E555423 T1 ATE555423 T1 AT E555423T1 AT 03754886 T AT03754886 T AT 03754886T AT 03754886 T AT03754886 T AT 03754886T AT E555423 T1 ATE555423 T1 AT E555423T1
Authority
AT
Austria
Prior art keywords
composition
weight
removal
etch residue
dimethylacetamide
Prior art date
Application number
AT03754886T
Other languages
English (en)
Inventor
Matthew Egbe
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32029051&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE555423(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE555423T1 publication Critical patent/ATE555423T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
AT03754886T 2002-09-26 2003-09-26 Zusammensetzung und verfahren zum entfernen von ätzresten ATE555423T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/254,785 US7166419B2 (en) 2002-09-26 2002-09-26 Compositions substrate for removing etching residue and use thereof
PCT/US2003/030237 WO2004030038A2 (en) 2002-09-26 2003-09-26 Compositions substrate for removing etching residue and use thereof

Publications (1)

Publication Number Publication Date
ATE555423T1 true ATE555423T1 (de) 2012-05-15

Family

ID=32029051

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03754886T ATE555423T1 (de) 2002-09-26 2003-09-26 Zusammensetzung und verfahren zum entfernen von ätzresten

Country Status (8)

Country Link
US (3) US7166419B2 (de)
EP (2) EP1552342B1 (de)
JP (3) JP5431630B2 (de)
KR (2) KR101107433B1 (de)
CN (1) CN100367114C (de)
AT (1) ATE555423T1 (de)
AU (1) AU2003272688A1 (de)
WO (1) WO2004030038A2 (de)

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Also Published As

Publication number Publication date
EP2107420A1 (de) 2009-10-07
KR20100082033A (ko) 2010-07-15
US20040063042A1 (en) 2004-04-01
EP1552342A2 (de) 2005-07-13
JP5431630B2 (ja) 2014-03-05
WO2004030038B1 (en) 2004-09-02
EP1552342A4 (de) 2006-06-21
EP1552342B1 (de) 2012-04-25
AU2003272688A8 (en) 2004-04-19
JP2013092776A (ja) 2013-05-16
JP2010047770A (ja) 2010-03-04
US20060205622A1 (en) 2006-09-14
KR20050062564A (ko) 2005-06-23
WO2004030038A3 (en) 2004-07-08
AU2003272688A1 (en) 2004-04-19
US7129029B2 (en) 2006-10-31
CN100367114C (zh) 2008-02-06
CN1688930A (zh) 2005-10-26
WO2004030038A2 (en) 2004-04-08
JP5537126B2 (ja) 2014-07-02
JP2006501327A (ja) 2006-01-12
KR101107433B1 (ko) 2012-01-19
US7166419B2 (en) 2007-01-23
USRE42128E1 (en) 2011-02-08

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