ATE555504T1 - Photovoltaische vorrichtung - Google Patents

Photovoltaische vorrichtung

Info

Publication number
ATE555504T1
ATE555504T1 AT02014245T AT02014245T ATE555504T1 AT E555504 T1 ATE555504 T1 AT E555504T1 AT 02014245 T AT02014245 T AT 02014245T AT 02014245 T AT02014245 T AT 02014245T AT E555504 T1 ATE555504 T1 AT E555504T1
Authority
AT
Austria
Prior art keywords
photovoltaic device
atom
nitrogen concentration
maximum peak
type junction
Prior art date
Application number
AT02014245T
Other languages
English (en)
Inventor
Atsushi Yasuno
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE555504T1 publication Critical patent/ATE555504T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT02014245T 2001-06-29 2002-06-26 Photovoltaische vorrichtung ATE555504T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001200155A JP4560245B2 (ja) 2001-06-29 2001-06-29 光起電力素子

Publications (1)

Publication Number Publication Date
ATE555504T1 true ATE555504T1 (de) 2012-05-15

Family

ID=19037324

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02014245T ATE555504T1 (de) 2001-06-29 2002-06-26 Photovoltaische vorrichtung

Country Status (5)

Country Link
US (1) US6700057B2 (de)
EP (1) EP1271661B1 (de)
JP (1) JP4560245B2 (de)
CN (1) CN1186823C (de)
AT (1) ATE555504T1 (de)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014812A (ja) * 2002-06-07 2004-01-15 Canon Inc 光起電力素子
JP2005142268A (ja) * 2003-11-05 2005-06-02 Canon Inc 光起電力素子およびその製造方法
JP4410654B2 (ja) * 2004-10-20 2010-02-03 三菱重工業株式会社 薄膜シリコン積層型太陽電池及びその製造方法
JP2006120745A (ja) * 2004-10-20 2006-05-11 Mitsubishi Heavy Ind Ltd 薄膜シリコン積層型太陽電池
JP4963353B2 (ja) * 2005-08-29 2012-06-27 トヨタ自動車株式会社 炭化珪素系混晶の製造方法
US20100147379A1 (en) * 2005-10-03 2010-06-17 Katsushi Kishimoto Silicon-based thin-film photoelectric conversion device, and method and apparatus for manufacturing the same
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US9147778B2 (en) * 2006-11-07 2015-09-29 First Solar, Inc. Photovoltaic devices including nitrogen-containing metal contact
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US7923801B2 (en) 2007-04-18 2011-04-12 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
US7927713B2 (en) * 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US20080271675A1 (en) * 2007-05-01 2008-11-06 Applied Materials, Inc. Method of forming thin film solar cells
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
WO2009018509A1 (en) * 2007-08-02 2009-02-05 Applied Materials, Inc. Thin film transistors using thin film semiconductor materials
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
EP2075850A3 (de) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelektrische Umwandlungsvorrichtung und Verfahren zu ihrer Herstellung
US20090208668A1 (en) * 2008-02-19 2009-08-20 Soo Young Choi Formation of clean interfacial thin film solar cells
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8203195B2 (en) * 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
JP5436017B2 (ja) * 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
KR101580575B1 (ko) * 2008-04-25 2015-12-28 에이에스엠 인터내셔널 엔.브이. 텔루르와 셀렌 박막의 원자층 증착을 위한 전구체의 합성과 그 용도
WO2009157573A1 (en) 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, semiconductor device and electronic device
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
WO2010035846A1 (en) * 2008-09-26 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US20100078064A1 (en) * 2008-09-29 2010-04-01 Thinsilicion Corporation Monolithically-integrated solar module
JP4764469B2 (ja) 2008-10-31 2011-09-07 三菱重工業株式会社 光電変換装置及び光電変換装置の製造方法
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
KR101319674B1 (ko) * 2009-05-06 2013-10-17 씬실리콘 코포레이션 광기전 전지 및 반도체층 적층체에서의 광 포획성 향상 방법
WO2010144459A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods for manufacturing photovoltaic modules having tandem semiconductor layer stacks
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
KR101733718B1 (ko) 2009-09-24 2017-05-10 어플라이드 머티어리얼스, 인코포레이티드 소스 및 드레인 금속 식각을 위해 습식 프로세스를 이용하여 금속 산화물 또는 금속 산질화물 ｔｆｔ들을 제조하는 방법들
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
TWI447918B (zh) * 2009-10-23 2014-08-01 Ind Tech Res Inst 透明型太陽能電池
KR101218133B1 (ko) * 2010-04-27 2013-01-18 엘지디스플레이 주식회사 마이크로 렌즈의 제조방법 및 마이크로 렌즈를 구비한 태양전지
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
US8653360B2 (en) * 2010-08-04 2014-02-18 International Business Machines Corporation Compositionally-graded band gap heterojunction solar cell
KR20120100296A (ko) * 2011-03-03 2012-09-12 삼성전자주식회사 수직 성장된 반도체를 포함하는 적층 구조물과 이를 포함하는 ｐｎ 접합 소자 및 이들의 제조 방법
US20120318335A1 (en) * 2011-06-15 2012-12-20 International Business Machines Corporation Tandem solar cell with improved tunnel junction
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
KR20130042207A (ko) * 2011-10-18 2013-04-26 엘지이노텍 주식회사 태양전지모듈 및 이의 제조방법
US8735210B2 (en) 2012-06-28 2014-05-27 International Business Machines Corporation High efficiency solar cells fabricated by inexpensive PECVD
US20140311568A1 (en) * 2013-04-23 2014-10-23 National Yunlin University Of Science And Technology Solar cell with anti-reflection structure and method for fabricating the same
TWI545788B (zh) 2014-10-03 2016-08-11 財團法人工業技術研究院 板材與模組結構
GB2530988B (en) * 2014-10-06 2016-08-24 Ibm Monolithically integrated thin-film electronic conversion unit for lateral multifunction thin-film solar cells
IT201700004876A1 (it) * 2017-01-18 2018-07-18 Enel Green Power Spa Apparato a cella solare e relativo metodo di produzione per celle singole, tandem e sistemi a eterogiunzione

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2949498A (en) 1955-10-31 1960-08-16 Texas Instruments Inc Solar energy converter
US4531015A (en) * 1984-04-12 1985-07-23 Atlantic Richfield Company PIN Amorphous silicon solar cell with nitrogen compensation
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
US4776894A (en) * 1986-08-18 1988-10-11 Sanyo Electric Co., Ltd. Photovoltaic device
JPH07105513B2 (ja) * 1986-09-26 1995-11-13 三洋電機株式会社 光起電力装置
JPH0794768A (ja) * 1993-09-22 1995-04-07 Sanyo Electric Co Ltd 光起電力装置
JP3332700B2 (ja) * 1995-12-22 2002-10-07 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3745076B2 (ja) * 1997-04-17 2006-02-15 株式会社カネカ タンデム型シリコン系薄膜光電変換装置
JPH11243222A (ja) * 1998-02-26 1999-09-07 Canon Inc 半導体膜形成装置、半導体膜の製造方法及び光起電力素子の製造方法
JP4651072B2 (ja) * 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置

Also Published As

Publication number Publication date
US6700057B2 (en) 2004-03-02
JP4560245B2 (ja) 2010-10-13
CN1402361A (zh) 2003-03-12
JP2003017724A (ja) 2003-01-17
CN1186823C (zh) 2005-01-26
EP1271661A2 (de) 2003-01-02
EP1271661A3 (de) 2007-06-27
EP1271661B1 (de) 2012-04-25
US20030015234A1 (en) 2003-01-23

Similar Documents

Publication Publication Date Title
ATE555504T1 (de) Photovoltaische vorrichtung
DE602004018603D1 (de) Photoelektrische Umwandlungsvorrichtung und Bildaufnahmesystem
WO2002011213A1 (en) Dye-sensitized photoelectric transducer
EP1251568A3 (de) LED und Display mit LEDs
EP1328024A3 (de) Optoelektronische Vorrichtung aus Silizium und Lichtemittierende Vorrichtung
DE69943141D1 (de) Photovoltaische Leistungserzeugungsvorrichtung
DE69332933D1 (de) Photovoltaische Vorichtung und Verfahren zu deren Herstellung
EP0987722A3 (de) Halbleiterüberspannungsableiter, elektronisches Gerät und Leistungsmodul
DE60016654D1 (de) Photovoltaische Leistungserzeugungsvorrichtung
EP1313151A3 (de) Vorrichtung zur Umwandlung des Sonnenlichts in elektrischen Strom
EP1372198A3 (de) Photovoltaische Vorrichtung
DE69807015D1 (de) Photoelektrische Umwandlungsvorrichtung und Sonnenzelle
IT8320731A0 (it) Leghe di silicio amorfo, contenenti ossigeno, di tipo p, ad ampio intervallo di energia proibita e dispositivi utilizzanti le stesse.
SG145722A1 (en) Light emitting apparatus
CA2364452A1 (en) Radiation concentrator for a photovoltaic device
MA25859A1 (fr) Station eolienne ou parc d'eoliennes constitue d'une multitude de stations eoliennes (puissance apparente constante)
MY124274A (en) Semiconductor device having a light-receiving element, optical pickup device and method of manufacturing a semiconductor device having a light-receiving element
DE60231290D1 (de) Photoelektrisches umsetzungselement mit pigmentsensibilisierung
EP1037369A3 (de) Elektrisches Energieerzeugungssystem
DE602004022807D1 (de) Photoelektrischer dünnfilm-wandler
EP1213776A3 (de) Metallkomplex-Farbstoff für eine farbstoffsensibilisierte Solarzelle
AU2003233372A8 (en) Schottky power diode comprising a sicoi substrate and the method of producing one such diode
NO20011497L (no) Kontakt av höydopet p-type for en frontbelyst, rask fotodiode
WO2004068548A3 (en) Three dimensional radiation conversion semiconductor devices
BG103706A (bg) Полупроводников конструктивен елемент, по-специално елемент за слънчева батерия, както и метод за неговото производство