ATE60670T1 - Lichtempfindliche elemente. - Google Patents

Lichtempfindliche elemente.

Info

Publication number
ATE60670T1
ATE60670T1 AT86308521T AT86308521T ATE60670T1 AT E60670 T1 ATE60670 T1 AT E60670T1 AT 86308521 T AT86308521 T AT 86308521T AT 86308521 T AT86308521 T AT 86308521T AT E60670 T1 ATE60670 T1 AT E60670T1
Authority
AT
Austria
Prior art keywords
light receiving
layer
receiving member
atoms
interference
Prior art date
Application number
AT86308521T
Other languages
English (en)
Inventor
Mitsuru Honda
Kyosuke Ogawa
Keiichi Murai
Atsushi Koike
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE60670T1 publication Critical patent/ATE60670T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08235Silicon-based comprising three or four silicon-based layers
    • G03G5/08242Silicon-based comprising three or four silicon-based layers at least one with varying composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08235Silicon-based comprising three or four silicon-based layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/10Bases for charge-receiving or other layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14Inert intermediate or cover layers for charge-receiving layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14Inert intermediate or cover layers for charge-receiving layers
    • G03G5/147Cover layers
    • G03G5/14704Cover layers comprising inorganic material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Light Receiving Elements (AREA)
AT86308521T 1985-11-02 1986-10-31 Lichtempfindliche elemente. ATE60670T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60246473A JPS62106470A (ja) 1985-11-02 1985-11-02 光受容部材
EP86308521A EP0223469B1 (de) 1985-11-02 1986-10-31 Lichtempfindliche Elemente

Publications (1)

Publication Number Publication Date
ATE60670T1 true ATE60670T1 (de) 1991-02-15

Family

ID=17148923

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86308521T ATE60670T1 (de) 1985-11-02 1986-10-31 Lichtempfindliche elemente.

Country Status (8)

Country Link
US (1) US4797336A (de)
EP (1) EP0223469B1 (de)
JP (1) JPS62106470A (de)
CN (1) CN1011354B (de)
AT (1) ATE60670T1 (de)
AU (1) AU593588B2 (de)
CA (1) CA1288630C (de)
DE (1) DE3677329D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1237798A (en) * 1984-07-23 1988-06-07 Anthony E. Dombrowski Driver alerting device
US4762762A (en) * 1985-10-24 1988-08-09 Canon Kabushiki Kaisha Electrophotographic light receiving members comprising amorphous silicon and substrate having minute irregularities
US4834501A (en) * 1985-10-28 1989-05-30 Canon Kabushiki Kaisha Light receiving member having a light receiving layer of a-Si(Ge,Sn)(H,X) and a-Si(H,X) layers on a support having spherical dimples with inside faces having minute irregularities
US5096792A (en) * 1990-07-02 1992-03-17 Xerox Corporation Plywood effect suppression in photosensitive imaging members
JP2000029232A (ja) * 1998-07-10 2000-01-28 Canon Inc 画像形成装置
EP1134619A3 (de) 2000-03-16 2003-04-02 Canon Kabushiki Kaisha Lichtempfindliches Element, Bildherstellungsapparat und Bildherstellungsverfahren
CN100442146C (zh) * 2003-03-04 2008-12-10 三菱化学株式会社 用于电子照相光感受器的基底、其生产方法及使用其的电子照相光感受器
DE102015113141A1 (de) * 2014-12-15 2016-06-16 Mauser-Werke Oberndorf Maschinenbau Gmbh Verfahren zur Bearbeitung einer Werkstückoberfläche und Werkstück
CN109155340A (zh) * 2015-12-21 2019-01-04 文和文森斯设备公司 微结构增强吸收光敏器件

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100759B (en) * 1977-12-22 1983-06-08 Canon Kk Electrophotographic photosensitive member and process for production thereof
JPS6035059B2 (ja) 1977-12-22 1985-08-12 キヤノン株式会社 電子写真感光体およびその製造方法
JPS54171743U (de) 1978-05-24 1979-12-04
US4202704A (en) * 1978-12-13 1980-05-13 International Business Machines Corporation Optical energy conversion
JPS55137536A (en) * 1979-04-13 1980-10-27 Fuji Photo Film Co Ltd Transfer film for electrophotographic copier
JPS5683746A (en) 1979-12-13 1981-07-08 Canon Inc Electrophotographic image forming member
JPS574172A (en) 1980-06-09 1982-01-09 Canon Inc Light conductive member
JPS574053A (en) 1980-06-09 1982-01-09 Canon Inc Photoconductive member
JPS6059822B2 (ja) 1980-06-30 1985-12-26 松下電工株式会社 無鉄芯型電機子の製造方法
US4394425A (en) * 1980-09-12 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(C) barrier layer
JPS5752178A (en) 1980-09-13 1982-03-27 Canon Inc Photoconductive member
JPS5752180A (en) 1980-09-12 1982-03-27 Canon Inc Photoconductive member
JPS5752179A (en) 1980-09-12 1982-03-27 Canon Inc Photoconductive member
JPS5758160A (en) 1980-09-25 1982-04-07 Canon Inc Photoconductive member
JPS5758159A (en) 1980-09-25 1982-04-07 Canon Inc Photoconductive member
JPS5758161A (en) 1980-09-25 1982-04-07 Canon Inc Photoconductive member
JPS57165845A (en) 1981-04-06 1982-10-13 Hitachi Ltd Electrophotographic recorder
JPS58162975A (ja) 1982-03-24 1983-09-27 Canon Inc 電子写真感光体
FR2524661B1 (fr) * 1982-03-31 1987-04-17 Canon Kk Element photoconducteur
DE3321648A1 (de) * 1982-06-15 1983-12-15 Konishiroku Photo Industry Co., Ltd., Tokyo Photorezeptor
CA1209681A (en) * 1982-08-04 1986-08-12 Exxon Research And Engineering Company Optically enhanced thin film photovoltaic device using lithography defined random surfaces
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
CA1225139A (en) * 1982-09-17 1987-08-04 J. Thomas Tiedje Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
US4599482A (en) * 1983-03-07 1986-07-08 Semiconductor Energy Lab. Co., Ltd. Semiconductor photoelectric conversion device and method of making the same
US4532198A (en) * 1983-05-09 1985-07-30 Canon Kabushiki Kaisha Photoconductive member
US4705732A (en) * 1984-04-27 1987-11-10 Canon Kabushiki Kaisha Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon

Also Published As

Publication number Publication date
US4797336A (en) 1989-01-10
EP0223469B1 (de) 1991-01-30
DE3677329D1 (de) 1991-03-07
CN1011354B (zh) 1991-01-23
CN86108356A (zh) 1987-06-17
EP0223469A2 (de) 1987-05-27
JPS62106470A (ja) 1987-05-16
AU593588B2 (en) 1990-02-15
EP0223469A3 (en) 1987-09-02
CA1288630C (en) 1991-09-10
AU6457286A (en) 1987-05-07

Similar Documents

Publication Publication Date Title
ATE60669T1 (de) Lichtempfindliche elemente.
ATE60670T1 (de) Lichtempfindliche elemente.
GB2071414A (en) Solar cell with enhanced radiation collection
DE3676445D1 (de) Lichtempfindliche elemente.
JPS5375950A (en) Formation of hologram
JPS57165844A (en) Electrophotographic recorder
JPS5634154A (en) Optical disc for write-in
CA2179847A1 (en) Method and apparatus for remote thickness measurement of a sheet or layer
JPS5588002A (en) Optical making method of diffusion plate
JPS5657010A (en) Holographic grating
JPS5522807A (en) Semiconductor laser element and manufacturing of the same
JPS5573079A (en) Information recording-reproducing method
JPS6415785A (en) Hologram
JPS5713779A (en) Solid state image pickup device
JPS5611401A (en) Dove prism
JPS6449930A (en) Multiple reflection cell
JPS5567740A (en) Screen
JPS5796316A (en) Liquid crystal display device
JPS5553387A (en) Production of hologram
JPS644718A (en) Light scanning device
JPS5590956A (en) Photoreceptor for electrophotography
JPS5330295A (en) Device having active layer of light transmissible laser on substrate
TW255033B (de)
JPS5627117A (en) Light splitter
DAINTY Enhanced backscattering from rough surfaces(Periodic Report No. 1)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties