ATE72909T1 - Durchsichtige leitende schicht und verfahren zu deren herstellung. - Google Patents

Durchsichtige leitende schicht und verfahren zu deren herstellung.

Info

Publication number
ATE72909T1
ATE72909T1 AT86113673T AT86113673T ATE72909T1 AT E72909 T1 ATE72909 T1 AT E72909T1 AT 86113673 T AT86113673 T AT 86113673T AT 86113673 T AT86113673 T AT 86113673T AT E72909 T1 ATE72909 T1 AT E72909T1
Authority
AT
Austria
Prior art keywords
production
conductive coating
clear conductive
conductive film
transparent conductive
Prior art date
Application number
AT86113673T
Other languages
English (en)
Inventor
Shigeo Aoki
Original Assignee
Hosiden Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hosiden Electronics Co filed Critical Hosiden Electronics Co
Application granted granted Critical
Publication of ATE72909T1 publication Critical patent/ATE72909T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Electric Cables (AREA)
AT86113673T 1985-10-04 1986-10-03 Durchsichtige leitende schicht und verfahren zu deren herstellung. ATE72909T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60221665A JPS6281057A (ja) 1985-10-04 1985-10-04 透明導電膜
EP86113673A EP0217405B1 (de) 1985-10-04 1986-10-03 Durchsichtige leitende Schicht und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
ATE72909T1 true ATE72909T1 (de) 1992-03-15

Family

ID=16770341

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86113673T ATE72909T1 (de) 1985-10-04 1986-10-03 Durchsichtige leitende schicht und verfahren zu deren herstellung.

Country Status (6)

Country Link
US (1) US4733284A (de)
EP (1) EP0217405B1 (de)
JP (1) JPS6281057A (de)
KR (1) KR900007756B1 (de)
AT (1) ATE72909T1 (de)
DE (1) DE3683979D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE77177T1 (de) * 1985-10-04 1992-06-15 Hosiden Corp Duennfilmtransistor und verfahren zu seiner herstellung.
US4994401A (en) * 1987-01-16 1991-02-19 Hosiden Electronics Co., Ltd. Method of making a thin film transistor
US5173443A (en) * 1987-02-13 1992-12-22 Northrop Corporation Method of manufacture of optically transparent electrically conductive semiconductor windows
GB2214710A (en) * 1988-01-29 1989-09-06 Univ Open Solar collectors
KR910007142A (ko) * 1988-09-30 1991-04-30 미다 가쓰시게 박막 광트랜지스터와 그것을 사용한 광센서어레이
FR2640809B1 (fr) * 1988-12-19 1993-10-22 Chouan Yannick Procede de gravure d'une couche d'oxyde metallique et depot simultane d'un film de polymere, application de ce procede a la fabrication d'un transistor
JPH0391932A (ja) * 1989-09-04 1991-04-17 Canon Inc 半導体装置の製造方法
KR930001901B1 (ko) * 1990-07-27 1993-03-19 삼성전자 주식회사 박막 트랜지스터의 제조방법
JP2912506B2 (ja) * 1992-10-21 1999-06-28 シャープ株式会社 透明導電膜の形成方法
EP0660381A1 (de) * 1993-12-21 1995-06-28 Koninklijke Philips Electronics N.V. Herstellungsverfahren für ein lichtdurchlässiges Leitermuster und eine Flüssigkristall-Anzeigevorrichtung
JP3272532B2 (ja) * 1993-12-27 2002-04-08 富士通株式会社 半導体装置の製造方法
DE69635107D1 (de) * 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
US5824418A (en) * 1995-09-05 1998-10-20 Northrop Grumman Corporation Optically transparent, electrically conductive semiconductor windows
JP2757850B2 (ja) * 1996-04-18 1998-05-25 日本電気株式会社 薄膜トランジスタおよびその製造方法
KR100377376B1 (ko) * 2000-03-10 2003-03-26 우형철 이온빔 증착에 의한 ｉｔｏ박막 증착방법 및 증착장치
US20070193624A1 (en) * 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
JP4752712B2 (ja) * 2006-10-10 2011-08-17 株式会社島津製作所 自動分析装置
US8179587B2 (en) * 2008-01-04 2012-05-15 3M Innovative Properties Company Electrochromic device
US8896065B2 (en) * 2008-04-14 2014-11-25 Sharp Laboratories Of America, Inc. Top gate thin film transistor with independent field control for off-current suppression

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1409894A (fr) * 1964-07-23 1965-09-03 Electronique & Automatisme Sa Dispositif opto-électronique perfectionné
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor
US4278831A (en) * 1979-04-27 1981-07-14 The Boeing Company Process for fabricating solar cells and the product produced thereby
JPS5951757B2 (ja) * 1979-12-27 1984-12-15 富士電機株式会社 非晶質半導体装置の製造方法
JPS5778135A (en) * 1980-11-01 1982-05-15 Semiconductor Energy Lab Co Ltd Semiconductor device and manufacture thereof
JPS59181064A (ja) * 1983-03-31 1984-10-15 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
EP0217405A1 (de) 1987-04-08
US4733284A (en) 1988-03-22
DE3683979D1 (de) 1992-04-02
KR870004533A (ko) 1987-05-11
EP0217405B1 (de) 1992-02-26
JPS6281057A (ja) 1987-04-14
KR900007756B1 (ko) 1990-10-19

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Legal Events

Date Code Title Description
EEFA Change of the company name
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties