JPS5721875A - Photosensor - Google Patents

Photosensor

Info

Publication number
JPS5721875A
JPS5721875A JP9595280A JP9595280A JPS5721875A JP S5721875 A JPS5721875 A JP S5721875A JP 9595280 A JP9595280 A JP 9595280A JP 9595280 A JP9595280 A JP 9595280A JP S5721875 A JPS5721875 A JP S5721875A
Authority
JP
Japan
Prior art keywords
layer
photosensor
group
aluminum
photoconductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9595280A
Other languages
Japanese (ja)
Other versions
JPS6322074B2 (en
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Yoshiaki Shirato
Seishiro Yoshioka
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9595280A priority Critical patent/JPS5721875A/en
Publication of JPS5721875A publication Critical patent/JPS5721875A/en
Publication of JPS6322074B2 publication Critical patent/JPS6322074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the durability and reliability of a photosensor by containing no elements of III-a group-aluminum group in the layer region of the side contacting with a photoconductive layer of an electrode layer contacted with the photoconductive layer. CONSTITUTION:A transparent pattern electrode 3 of SnO2 film is formed on a substrate 2, an N<+> type layer 4 is formed thereon, a photoconductive layer 5 made of amorphous material containing silicon as a base and at least one of hydrogen and halogen elements is formed on the overall surface, and an N<+> type layer 6 and aluminum layer 7 are further formed thereon.
JP9595280A 1980-07-14 1980-07-14 Photosensor Granted JPS5721875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9595280A JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Publications (2)

Publication Number Publication Date
JPS5721875A true JPS5721875A (en) 1982-02-04
JPS6322074B2 JPS6322074B2 (en) 1988-05-10

Family

ID=14151585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9595280A Granted JPS5721875A (en) 1980-07-14 1980-07-14 Photosensor

Country Status (1)

Country Link
JP (1) JPS5721875A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
JPS61181158A (en) * 1985-02-06 1986-08-13 Nec Corp Close-contact image sensor
JP2011228733A (en) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp Photosensor and method of manufacturing the same
KR20180084984A (en) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 Chiller device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116671A (en) * 1989-09-29 1991-05-17 Riyousei Denso Kk Receiving connection terminal
JPH0355670U (en) * 1989-10-03 1991-05-29

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54139341A (en) * 1978-04-20 1979-10-29 Canon Inc Information processing unit
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS5548979A (en) * 1978-10-03 1980-04-08 Mitsubishi Electric Corp Manufacturing method of solar cell
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132654A (en) * 1983-01-20 1984-07-30 Fuji Xerox Co Ltd Manufacture of continuous thin film manuscript read-out element
JPS61181158A (en) * 1985-02-06 1986-08-13 Nec Corp Close-contact image sensor
JP2011228733A (en) * 2011-06-29 2011-11-10 Mitsubishi Electric Corp Photosensor and method of manufacturing the same
KR20180084984A (en) 2015-12-21 2018-07-25 신와 콘트롤즈 가부시키가이샤 Chiller device

Also Published As

Publication number Publication date
JPS6322074B2 (en) 1988-05-10

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