AU704036B2 - Integrated thin-film solar battery and method of manufacturing the same - Google Patents

Integrated thin-film solar battery and method of manufacturing the same Download PDF

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Publication number
AU704036B2
AU704036B2 AU55891/96A AU5589196A AU704036B2 AU 704036 B2 AU704036 B2 AU 704036B2 AU 55891/96 A AU55891/96 A AU 55891/96A AU 5589196 A AU5589196 A AU 5589196A AU 704036 B2 AU704036 B2 AU 704036B2
Authority
AU
Australia
Prior art keywords
layer
electrode layer
electrically conductive
solar battery
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU55891/96A
Other languages
English (en)
Other versions
AU5589196A (en
Inventor
Katsuhiko Hayashi
Atsuo Ishikawa
Masataka Kondo
Shinichiro Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Publication of AU5589196A publication Critical patent/AU5589196A/en
Application granted granted Critical
Publication of AU704036B2 publication Critical patent/AU704036B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
AU55891/96A 1995-06-15 1996-06-12 Integrated thin-film solar battery and method of manufacturing the same Ceased AU704036B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7-148847 1995-06-15
JP14884795A JP3653800B2 (ja) 1995-06-15 1995-06-15 集積化薄膜太陽電池の製造方法

Publications (2)

Publication Number Publication Date
AU5589196A AU5589196A (en) 1997-01-02
AU704036B2 true AU704036B2 (en) 1999-04-15

Family

ID=15462073

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55891/96A Ceased AU704036B2 (en) 1995-06-15 1996-06-12 Integrated thin-film solar battery and method of manufacturing the same

Country Status (6)

Country Link
EP (1) EP0749161B1 (2)
JP (1) JP3653800B2 (2)
KR (1) KR970004102A (2)
AU (1) AU704036B2 (2)
DE (1) DE69634059T2 (2)
TW (1) TW302553B (2)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265652B1 (en) * 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
US6468828B1 (en) * 1998-07-14 2002-10-22 Sky Solar L.L.C. Method of manufacturing lightweight, high efficiency photovoltaic module
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6274804B1 (en) 1999-07-28 2001-08-14 Angewandte Solarenergie - Ase Gmbh Thin-film solar module
JP2001044466A (ja) * 1999-07-29 2001-02-16 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の洗浄方法及びその装置
AU772539B2 (en) 1999-07-29 2004-04-29 Kaneka Corporation Method for cleaning photovoltaic module and cleaning apparatus
EP2256824A3 (en) * 1999-08-25 2012-09-12 Kaneka Corporation Thin film photoelectric conversion module and method of manufacturing the same
KR100416139B1 (ko) * 2001-04-04 2004-01-31 삼성에스디아이 주식회사 태양 전지 모듈
JP4573162B2 (ja) * 2004-09-16 2010-11-04 富士電機システムズ株式会社 透明導電膜の製造方法
JP2006339342A (ja) * 2005-06-01 2006-12-14 Shin Etsu Handotai Co Ltd 太陽電池および太陽電池の製造方法
KR101144808B1 (ko) * 2008-09-01 2012-05-11 엘지전자 주식회사 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지
JP2012504350A (ja) * 2008-09-29 2012-02-16 シンシリコン・コーポレーション 一体的に統合されたソーラーモジュール
WO2010087333A1 (ja) * 2009-01-29 2010-08-05 京セラ株式会社 光電変換セル、光電変換モジュールおよび光電変換セルの製造方法
JP5480897B2 (ja) 2009-06-23 2014-04-23 東レエンジニアリング株式会社 太陽電池
DE102009027852A1 (de) 2009-07-20 2011-01-27 Q-Cells Se Dünnschicht-Solarmodul mit verbesserter Zusammenschaltung von Solarzellen sowie Verfahren zu dessen Herstellung
DE102009055675B4 (de) 2009-11-25 2016-05-19 Calyxo Gmbh Photovoltaik-Modulstruktur für die Dünnschichtphotovoltaik mit einer elektrischen Leitungsverbindung und Verfahren zur Herstellung der elektrischen Leitungsverbindung
JPWO2011132707A1 (ja) 2010-04-20 2013-07-18 京セラ株式会社 太陽電池素子およびそれを用いた太陽電池モジュール
JP5539081B2 (ja) * 2010-07-16 2014-07-02 株式会社カネカ 集積型薄膜光電変換装置の製造方法
NL2007344C2 (en) * 2011-09-02 2013-03-05 Stichting Energie Interdigitated back contact photovoltaic cell with floating front surface emitter regions.
KR101370554B1 (ko) * 2012-06-08 2014-03-10 재단법인대구경북과학기술원 박막 태양전지

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289865A2 (de) * 1987-05-05 1988-11-09 Messerschmitt-Bölkow-Blohm Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Dünnschicht-Solarzellenanordnung
JPH06104465A (ja) * 1992-09-22 1994-04-15 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
EP0113959B1 (en) * 1982-11-24 1993-06-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
US4755475A (en) * 1986-02-18 1988-07-05 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0289865A2 (de) * 1987-05-05 1988-11-09 Messerschmitt-Bölkow-Blohm Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Dünnschicht-Solarzellenanordnung
JPH06104465A (ja) * 1992-09-22 1994-04-15 Fuji Electric Co Ltd 薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
JPH098337A (ja) 1997-01-10
KR970004102A (ko) 1997-01-29
TW302553B (2) 1997-04-11
EP0749161B1 (en) 2004-12-22
AU5589196A (en) 1997-01-02
DE69634059T2 (de) 2005-05-19
EP0749161A3 (en) 1998-07-15
EP0749161A2 (en) 1996-12-18
JP3653800B2 (ja) 2005-06-02
DE69634059D1 (de) 2005-01-27

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