BE574398A - Perfectionnements aux dispositif de jonction semi-conducteurs et à leurs procédés de fabrication - Google Patents

Perfectionnements aux dispositif de jonction semi-conducteurs et à leurs procédés de fabrication

Info

Publication number
BE574398A
BE574398A BE574398A BE574398A BE574398A BE 574398 A BE574398 A BE 574398A BE 574398 A BE574398 A BE 574398A BE 574398 A BE574398 A BE 574398A BE 574398 A BE574398 A BE 574398A
Authority
BE
Belgium
Prior art keywords
manufacturing processes
semiconductor junction
junction devices
devices
semiconductor
Prior art date
Application number
BE574398A
Other languages
English (en)
Original Assignee
Bell Telephone Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Telephone Mfg filed Critical Bell Telephone Mfg
Publication of BE574398A publication Critical patent/BE574398A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE574398A 1958-01-03 1959-01-02 Perfectionnements aux dispositif de jonction semi-conducteurs et à leurs procédés de fabrication BE574398A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB332/58A GB827117A (en) 1958-01-03 1958-01-03 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
BE574398A true BE574398A (fr) 1959-07-03

Family

ID=9702524

Family Applications (1)

Application Number Title Priority Date Filing Date
BE574398A BE574398A (fr) 1958-01-03 1959-01-02 Perfectionnements aux dispositif de jonction semi-conducteurs et à leurs procédés de fabrication

Country Status (4)

Country Link
US (1) US3013192A (fr)
BE (1) BE574398A (fr)
FR (1) FR74768E (fr)
GB (1) GB827117A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054422A (fr) * 1963-03-16 1900-01-01
US3332810A (en) * 1963-09-28 1967-07-25 Matsushita Electronics Corp Silicon rectifier device
US3388013A (en) * 1963-09-28 1968-06-11 Matsushita Electronics Corp Method of forming a p-n junction in a polycrystalline material
US3275912A (en) * 1963-12-17 1966-09-27 Sperry Rand Corp Microelectronic chopper circuit having symmetrical base current feed
US3313988A (en) * 1964-08-31 1967-04-11 Gen Dynamics Corp Field effect semiconductor device and method of forming same
GB1099846A (en) * 1966-01-04 1968-01-17 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of semiconductor devices
US3742192A (en) * 1972-02-02 1973-06-26 J Brzuszek Electrical heating device and method
JP4474431B2 (ja) * 2007-03-26 2010-06-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体パッケージおよび該製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL178757B (nl) * 1952-06-02 British Steel Corp Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder.
US2793145A (en) * 1952-06-13 1957-05-21 Sylvania Electric Prod Method of forming a junction transistor
BE544843A (fr) * 1955-02-25
US2877358A (en) * 1955-06-20 1959-03-10 Bell Telephone Labor Inc Semiconductive pulse translator
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2898247A (en) * 1955-10-24 1959-08-04 Ibm Fabrication of diffused junction semi-conductor devices
NL217849A (fr) * 1956-06-12

Also Published As

Publication number Publication date
GB827117A (en) 1960-02-03
US3013192A (en) 1961-12-12
FR74768E (fr) 1961-01-16

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