BE578236R - Méthode de production du silicium à haute pureté - Google Patents

Méthode de production du silicium à haute pureté

Info

Publication number: BE578236R
Authority: BE; Belgium
Prior art keywords: production method; high purity; purity silicon; silicon production; silicon
Prior art date: 1958-05-14

Application number

BE578236A

Other languages

English (en)

Inventor

F J Raymond

Original Assignee

Bell Telephone Mfg

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-05-14

Filing date

1959-04-29

Publication date

1959-10-29

1959-04-29 Application filed by Bell Telephone Mfg filed Critical Bell Telephone Mfg

1959-10-29 Application granted granted Critical

1959-10-29 Publication of BE578236R publication Critical patent/BE578236R/fr

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)

BE578236A 1958-05-14 1959-04-29 Méthode de production du silicium à haute pureté BE578236R (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB1540958A GB883800A (en)	1958-05-14	1958-05-14	Improvements in or relating to the production of semi-conductor materials

Publications (1)

Publication Number	Publication Date
BE578236R true BE578236R (fr)	1959-10-29

Family

ID=10058636

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE578236A BE578236R (fr)	1958-05-14	1959-04-29	Méthode de production du silicium à haute pureté

Country Status (2)

Country	Link
BE (1)	BE578236R (fr)
GB (1)	GB883800A (fr)

1958
- 1958-05-14 GB GB1540958A patent/GB883800A/en not_active Expired
1959
- 1959-04-29 BE BE578236A patent/BE578236R/fr active

Also Published As

Publication number	Publication date
GB883800A (en)	1961-12-06

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