BE585390A - Procédé de fabrication de silicium de très grande pureté. - Google Patents

Procédé de fabrication de silicium de très grande pureté.

Info

Publication number: BE585390A
Authority: BE; Belgium
Prior art keywords: manufacturing process; high purity; purity silicon; silicon manufacturing; silicon
Prior art date: 1958-12-09

Application number

BE585390A

Other languages

English (en)

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1958-12-09

Filing date

1959-12-07

Publication date

1960-06-07

1959-12-07 Application filed by Siemens Ag filed Critical Siemens Ag

1960-06-07 Publication of BE585390A publication Critical patent/BE585390A/fr

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
238000004519 manufacturing process Methods 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)

BE585390A 1958-12-09 1959-12-07 Procédé de fabrication de silicium de très grande pureté. BE585390A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES60881A DE1150366B (de)	1958-12-09	1958-12-09	Verfahren zur Herstellung von Reinstsilicium

Publications (1)

Publication Number	Publication Date
BE585390A true BE585390A (fr)	1960-06-07

Family

ID=7494447

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE585390A BE585390A (fr)	1958-12-09	1959-12-07	Procédé de fabrication de silicium de très grande pureté.

Country Status (4)

Country	Link
US (1)	US3057690A (fr)
BE (1)	BE585390A (fr)
DE (1)	DE1150366B (fr)
GB (1)	GB904239A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL246576A (fr) *	1954-05-18	1900-01-01
NL277330A (fr) *	1961-04-22
DE1138481C2 (de) *	1961-06-09	1963-05-22	Siemens Ag	Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE1176102B (de) *	1962-09-25	1964-08-20	Siemens Ag	Verfahren zum tiegelfreien Herstellen von Galliumarsenidstaeben aus Galliumalkylen und Arsenverbindungen bei niedrigen Temperaturen
US3523816A (en) *	1967-10-27	1970-08-11	Texas Instruments Inc	Method for producing pure silicon
US3610202A (en) *	1969-05-23	1971-10-05	Siemens Ag	Epitactic apparatus
US3757733A (en) *	1971-10-27	1973-09-11	Texas Instruments Inc	Radial flow reactor
US3900660A (en) *	1972-08-21	1975-08-19	Union Carbide Corp	Manufacture of silicon metal from a mixture of chlorosilanes
DE2912661C2 (de) *	1979-03-30	1982-06-24	Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen	Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4343772A (en) *	1980-02-29	1982-08-10	Nasa	Thermal reactor
US4457902A (en) *	1980-10-24	1984-07-03	Watson Keith R	High efficiency hydrocarbon reduction of silica
JPS61101410A (ja) *	1984-10-24	1986-05-20	Hiroshi Ishizuka	多結晶珪素の製造法及びそのための装置
WO2009128888A1 (fr) *	2008-04-14	2009-10-22	Hemlock Semiconductor Corporation	Appareil de fabrication destiné à déposer un matériau et électrode utilisée dans un tel appareil
JP2011517734A (ja) *	2008-04-14	2011-06-16	ヘムロック・セミコンダクター・コーポレーション	材料を蒸着するための製造装置及び当該装置において使用される電極
KR101639577B1 (ko) *	2008-04-14	2016-07-14	헴로크세미컨덕터코포레이션	재료를 증착하기 위한 제조 장치와 이에 사용하기 위한 전극
US8993056B2 (en) *	2009-12-17	2015-03-31	Savi Research, Inc.	Method of gas distribution and nozzle design in the improved chemical vapor deposition of polysilicon reactor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2441603A (en) *	1943-07-28	1948-05-18	Bell Telephone Labor Inc	Electrical translating materials and method of making them
GB787043A (en) *	1954-09-15	1957-11-27	Sylvania Electric Prod	Method for production of silicon

1958
- 1958-12-09 DE DES60881A patent/DE1150366B/de active Pending
1959
- 1959-11-18 US US853886A patent/US3057690A/en not_active Expired - Lifetime
- 1959-12-07 BE BE585390A patent/BE585390A/fr unknown
- 1959-12-09 GB GB41889/59A patent/GB904239A/en not_active Expired

Also Published As

Publication number	Publication date
GB904239A (en)	1962-08-22
US3057690A (en)	1962-10-09
DE1150366B (de)	1963-06-20

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