BE617621A - Croissance de films épitaxiaux. - Google Patents

Croissance de films épitaxiaux.

Info

Publication number
BE617621A
BE617621A BE617621A BE617621A BE617621A BE 617621 A BE617621 A BE 617621A BE 617621 A BE617621 A BE 617621A BE 617621 A BE617621 A BE 617621A BE 617621 A BE617621 A BE 617621A
Authority
BE
Belgium
Prior art keywords
growth
epitaxial films
epitaxial
films
Prior art date
Application number
BE617621A
Other languages
English (en)
Inventor
Eileen Tannenbaum Handelman
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE617621A publication Critical patent/BE617621A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
BE617621A 1961-07-05 1962-05-14 Croissance de films épitaxiaux. BE617621A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12199961A 1961-07-05 1961-07-05

Publications (1)

Publication Number Publication Date
BE617621A true BE617621A (fr) 1962-08-31

Family

ID=22399970

Family Applications (1)

Application Number Title Priority Date Filing Date
BE617621A BE617621A (fr) 1961-07-05 1962-05-14 Croissance de films épitaxiaux.

Country Status (6)

Country Link
US (1) US3172792A (fr)
BE (1) BE617621A (fr)
CH (1) CH413801A (fr)
DE (1) DE1231676B (fr)
FR (1) FR1319183A (fr)
GB (1) GB995543A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447977A (en) * 1962-08-23 1969-06-03 Siemens Ag Method of producing semiconductor members
DE1289829B (de) * 1963-05-09 1969-02-27 Siemens Ag Verfahren zum Herstellen einer einkristallinen Halbleiterschicht durch Abscheidung aus einem Reaktionsgas
DE1238105B (de) * 1963-07-17 1967-04-06 Siemens Ag Verfahren zum Herstellen von pn-UEbergaengen in Silizium
DE1544187A1 (de) * 1964-04-25 1971-03-04 Fujitsu Ltd Verfahren zum Herstellen von Halbleiterkristallen durch Abscheidung aus der Gasphase
DE1289832B (de) * 1964-08-21 1969-02-27 Siemens Ag Vorrichtung zur Herstellung planer Oberflaechen von aus der Gasphase abgeschiedenen Halbleiterkristallschichten
DE1287047B (de) * 1965-02-18 1969-01-16 Siemens Ag Verfahren und Vorrichtung zum Abscheiden einer einkristallinen Halbleiterschicht
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
JP5017950B2 (ja) * 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (fr) * 1951-03-07 1900-01-01
NL106444C (fr) * 1953-03-19
NL256300A (fr) * 1959-05-28 1900-01-01

Also Published As

Publication number Publication date
US3172792A (en) 1965-03-09
DE1231676B (de) 1967-01-05
FR1319183A (fr) 1963-02-22
GB995543A (en) 1965-06-16
CH413801A (de) 1966-05-31

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