BE655057Q - Transistor de puissance à effet de champ - Google Patents

Transistor de puissance à effet de champ

Info

Publication number
BE655057Q
BE655057Q BE655057A BE655057A BE655057Q BE 655057 Q BE655057 Q BE 655057Q BE 655057 A BE655057 A BE 655057A BE 655057 A BE655057 A BE 655057A BE 655057 Q BE655057 Q BE 655057Q
Authority
BE
Belgium
Prior art keywords
field effect
power transistor
effect power
transistor
field
Prior art date
Application number
BE655057A
Other languages
English (en)
Inventor
Stanislas Teszner
Original Assignee
Forges Et Ateliers De Constructions Electriques De Jeumont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forges Et Ateliers De Constructions Electriques De Jeumont filed Critical Forges Et Ateliers De Constructions Electriques De Jeumont
Application granted granted Critical
Publication of BE655057Q publication Critical patent/BE655057Q/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/13Containers comprising a conductive base serving as an interconnection
    • H10W76/132Containers comprising a conductive base serving as an interconnection having other interconnections through an insulated passage in the conductive base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
BE655057A 1957-11-30 1964-10-30 Transistor de puissance à effet de champ BE655057Q (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR752813A FR72535E (fr) 1957-11-30 1957-11-30 Dispositif à semi-conducteur dit transistron unipolaire de puissance
FR867727A FR1301942A (fr) 1957-11-30 1961-07-11 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Publications (1)

Publication Number Publication Date
BE655057Q true BE655057Q (fr) 1965-02-15

Family

ID=74668069

Family Applications (2)

Application Number Title Priority Date Filing Date
BE647011A BE647011A (fr) 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques
BE655057A BE655057Q (fr) 1957-11-30 1964-10-30 Transistor de puissance à effet de champ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE647011A BE647011A (fr) 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Country Status (3)

Country Link
BE (2) BE647011A (fr)
FR (3) FR1163241A (fr)
NL (2) NL101320C (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
US3044909A (en) * 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
DE1114939B (de) * 1960-02-09 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiteranordnungen
NL262767A (fr) * 1960-04-01
US3281699A (en) * 1963-02-25 1966-10-25 Rca Corp Insulated-gate field-effect transistor oscillator circuits

Also Published As

Publication number Publication date
NL223101A (fr) 1900-01-01
BE647011A (fr) 1964-05-13
FR1163241A (fr) 1958-09-23
FR1301942A (fr) 1962-08-24
NL101320C (nl) 1962-05-15
FR72535E (fr) 1960-04-14

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