BE756139A - Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee - Google Patents

Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee

Info

Publication number
BE756139A
BE756139A BE756139DA BE756139A BE 756139 A BE756139 A BE 756139A BE 756139D A BE756139D A BE 756139DA BE 756139 A BE756139 A BE 756139A
Authority
BE
Belgium
Prior art keywords
coupling
low output
high input
control circuit
integrated intermediate
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
H C Lee
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE756139A publication Critical patent/BE756139A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
BE756139D 1969-09-15 Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee BE756139A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85807369A 1969-09-15 1969-09-15

Publications (1)

Publication Number Publication Date
BE756139A true BE756139A (fr) 1971-02-15

Family

ID=25327415

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756139D BE756139A (fr) 1969-09-15 Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee

Country Status (12)

Country Link
US (1) US3639787A (2)
JP (1) JPS493312B1 (2)
AT (1) AT324424B (2)
BE (1) BE756139A (2)
DE (1) DE2045618A1 (2)
ES (1) ES383456A1 (2)
FR (1) FR2061722B1 (2)
GB (1) GB1325882A (2)
MY (1) MY7400215A (2)
NL (1) NL7013553A (2)
SE (1) SE352987B (2)
ZA (1) ZA706259B (2)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039606A1 (de) * 1970-08-10 1972-02-17 Licentia Gmbh Elektrisches,dynamisch betriebenes Speicherelement
US4035662A (en) * 1970-11-02 1977-07-12 Texas Instruments Incorporated Capacitive means for controlling threshold voltages in insulated gate field effect transistor circuits
NL7107040A (2) * 1971-05-22 1972-11-24
US3787717A (en) * 1971-12-09 1974-01-22 Ibm Over voltage protection circuit lateral bipolar transistor with gated collector junction
JPS547181Y2 (2) * 1973-07-06 1979-04-04
JPS5714064B2 (2) * 1974-04-25 1982-03-20
JPS5718710B2 (2) * 1974-05-10 1982-04-17
JPS5648983B2 (2) * 1974-05-10 1981-11-19
DE2539967C2 (de) * 1975-09-02 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Logikgrundschaltung
IT1073440B (it) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuito elevatore di tensione realizzato in mos-fet
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
US4038567A (en) * 1976-03-22 1977-07-26 International Business Machines Corporation Memory input signal buffer circuit
US4891533A (en) * 1984-02-17 1990-01-02 Analog Devices, Incorporated MOS-cascoded bipolar current sources in non-epitaxial structure
US5103281A (en) * 1984-02-17 1992-04-07 Holloway Peter R MOS-cascoded bipolar current sources in non-epitaxial structure
KR920007535B1 (ko) * 1990-05-23 1992-09-05 삼성전자 주식회사 식별회로를 구비한 반도체 집적회로 칩
DE102013217398A1 (de) * 2013-09-02 2015-03-05 Conti Temic Microelectronic Gmbh Elektronische Mehrkanalumschalteinrichtung
CN117457634A (zh) * 2018-12-10 2024-01-26 钰创科技股份有限公司 统一集成电路系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (2) * 1961-09-08
NL293292A (2) * 1962-06-11
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3427445A (en) * 1965-12-27 1969-02-11 Ibm Full adder using field effect transistor of the insulated gate type
US3461361A (en) * 1966-02-24 1969-08-12 Rca Corp Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3390273A (en) * 1966-08-08 1968-06-25 Fairchild Camera Instr Co Electronic shutter with gating and storage features

Also Published As

Publication number Publication date
DE2045618A1 (de) 1971-03-25
GB1325882A (en) 1973-08-08
JPS493312B1 (2) 1974-01-25
US3639787A (en) 1972-02-01
MY7400215A (en) 1974-12-31
ZA706259B (en) 1971-06-30
FR2061722A1 (2) 1971-06-25
FR2061722B1 (2) 1976-10-29
NL7013553A (2) 1971-03-17
AT324424B (de) 1975-08-25
ES383456A1 (es) 1973-02-16
SE352987B (2) 1973-01-15

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