BE759345A - Dispositif semiconducteur sensible aux radiations electromagnetiques - Google Patents

Dispositif semiconducteur sensible aux radiations electromagnetiques

Info

Publication number
BE759345A
BE759345A BE759345DA BE759345A BE 759345 A BE759345 A BE 759345A BE 759345D A BE759345D A BE 759345DA BE 759345 A BE759345 A BE 759345A
Authority
BE
Belgium
Prior art keywords
semiconductor device
electromagnetic radiation
device sensitive
sensitive
electromagnetic
Prior art date
Application number
Other languages
English (en)
Inventor
J S Roberts
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE759345A publication Critical patent/BE759345A/fr

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
BE759345D 1969-11-28 Dispositif semiconducteur sensible aux radiations electromagnetiques BE759345A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88084269A 1969-11-28 1969-11-28

Publications (1)

Publication Number Publication Date
BE759345A true BE759345A (fr) 1971-05-24

Family

ID=25377234

Family Applications (1)

Application Number Title Priority Date Filing Date
BE759345D BE759345A (fr) 1969-11-28 Dispositif semiconducteur sensible aux radiations electromagnetiques

Country Status (4)

Country Link
US (1) US3590338A (fr)
BE (1) BE759345A (fr)
FR (1) FR2072389A5 (fr)
GB (1) GB1263046A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4131905A (en) * 1977-05-26 1978-12-26 Electric Power Research Institute, Inc. Light-triggered thyristor and package therefore
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
US4386362A (en) * 1979-12-26 1983-05-31 Rca Corporation Center gate semiconductor device having pipe cooling means
FR2481815A1 (fr) * 1980-04-30 1981-11-06 Cit Alcatel Composant opto-electronique discret
GB2128405B (en) * 1982-10-13 1986-07-30 Plessey Co Plc Enclosures for pyroelectric detectors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE672186A (fr) * 1964-11-12
DE1489791A1 (de) * 1964-12-22 1969-06-12 Ckd Praha Narodni Podnik Halbleiterbauelement mit einer Flaechenhalbleiteranordnung zwischen durch Federdruck angepressten Elektrodenkontaktplatten
GB1140677A (en) * 1965-05-07 1969-01-22 Ass Elect Ind Improvements relating to semi-conductor devices
DE1514474C3 (de) * 1965-06-05 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US3450962A (en) * 1966-02-01 1969-06-17 Westinghouse Electric Corp Pressure electrical contact assembly for a semiconductor device
US3396316A (en) * 1966-02-15 1968-08-06 Int Rectifier Corp Compression bonded semiconductor device with hermetically sealed subassembly
GB1133358A (en) * 1966-11-11 1968-11-13 Ass Elect Ind Pressure contact semi-conductor devices
US3504238A (en) * 1966-12-16 1970-03-31 Westinghouse Brake & Signal Solder free variable pressure contacted semiconductor device
US3492545A (en) * 1968-03-18 1970-01-27 Westinghouse Electric Corp Electrically and thermally conductive malleable layer embodying lead foil

Also Published As

Publication number Publication date
FR2072389A5 (fr) 1971-09-24
US3590338A (en) 1971-06-29
GB1263046A (en) 1972-02-09

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19881130