BE785287A - Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs - Google Patents

Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs

Info

Publication number
BE785287A
BE785287A BE785287A BE785287A BE785287A BE 785287 A BE785287 A BE 785287A BE 785287 A BE785287 A BE 785287A BE 785287 A BE785287 A BE 785287A BE 785287 A BE785287 A BE 785287A
Authority
BE
Belgium
Prior art keywords
conductor
manufacturing process
semiconductor devices
beam manufacturing
semiconductor
Prior art date
Application number
BE785287A
Other languages
English (en)
Inventor
T G Athanas
A A Anastasio
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE785287A publication Critical patent/BE785287A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
BE785287A 1971-06-24 1972-06-22 Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs BE785287A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15639871A 1971-06-24 1971-06-24

Publications (1)

Publication Number Publication Date
BE785287A true BE785287A (fr) 1972-10-16

Family

ID=22559406

Family Applications (1)

Application Number Title Priority Date Filing Date
BE785287A BE785287A (fr) 1971-06-24 1972-06-22 Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs

Country Status (9)

Country Link
US (1) US3765970A (fr)
JP (1) JPS5144062B1 (fr)
BE (1) BE785287A (fr)
CA (1) CA959387A (fr)
DE (1) DE2230171A1 (fr)
FR (1) FR2143327B1 (fr)
GB (1) GB1334494A (fr)
IT (1) IT956532B (fr)
NL (1) NL7208648A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2324780C3 (de) * 1973-05-16 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Halbleiterbauelements
GB1480592A (en) * 1973-11-02 1977-07-20 Marconi Co Ltd Light emitting diodes
US4068022A (en) * 1974-12-10 1978-01-10 Western Electric Company, Inc. Methods of strengthening bonds
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal
US4112196A (en) * 1977-01-24 1978-09-05 National Micronetics, Inc. Beam lead arrangement for microelectronic devices
FR2394894A1 (fr) * 1977-06-17 1979-01-12 Thomson Csf Dispositif de prise de contact sur un element semiconducteur
JPS5679450A (en) * 1979-11-30 1981-06-30 Mitsubishi Electric Corp Electrode and wiring of semiconductor device
US4377316A (en) * 1981-02-27 1983-03-22 International Business Machines Corporation High density interconnection means for chip carriers
JPS57139862U (fr) * 1981-02-27 1982-09-01
JPS5817649A (ja) * 1981-07-24 1983-02-01 Fujitsu Ltd 電子部品パツケ−ジ
US4612601A (en) * 1983-11-30 1986-09-16 Nec Corporation Heat dissipative integrated circuit chip package
JPS63205930A (ja) * 1987-02-21 1988-08-25 Ricoh Co Ltd 半導体集積回路装置の製造方法
DE3802403A1 (de) * 1988-01-28 1989-08-10 Licentia Gmbh Halbleiteranordnung mit polyimidpassivierung
US7595230B2 (en) * 2004-02-16 2009-09-29 Sharp Kabushiki Kaisha Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device
US7327634B2 (en) * 2004-07-09 2008-02-05 Aps Technology, Inc. Rotary pulser for transmitting information to the surface from a drill string down hole in a well

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134170C (fr) * 1963-12-17 1900-01-01
US3421985A (en) * 1965-10-19 1969-01-14 Sylvania Electric Prod Method of producing semiconductor devices having connecting leads attached thereto
US3535176A (en) * 1968-12-19 1970-10-20 Mallory & Co Inc P R Surface conditioning of silicon for electroless nickel plating

Also Published As

Publication number Publication date
GB1334494A (en) 1973-10-17
NL7208648A (fr) 1972-12-28
AU4357672A (en) 1974-01-03
US3765970A (en) 1973-10-16
CA959387A (en) 1974-12-17
FR2143327B1 (fr) 1977-12-23
DE2230171A1 (de) 1973-01-11
FR2143327A1 (fr) 1973-02-02
JPS5144062B1 (fr) 1976-11-26
IT956532B (it) 1973-10-10

Similar Documents

Publication Publication Date Title
BE785150A (fr) Procede pour la fabrication de dispositifs semiconducteurs
BE779788R (fr) Procede de fabrication de pates de
BE827022A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE789535A (fr) Procede de fabrication d'alkoxysilanes
CH553856A (fr) Procede pour la fabrication de fibrilles discontinues.
BE766395A (fr) Procede de fabrication du 1,1-difluorethane,
BE785287A (fr) Procede de fabrication des conducteurs-poutres pour dispositifssemiconducteurs
BE790694A (fr) Procede de fabrication de nitroparaffines
BE789534A (fr) Procede de fabrication de silanes
BE790289A (fr) Procede de fabrication de zeaxanthine
BE792908A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE781368A (fr) Procede de fabrication de capsules minuscules
BE787642A (fr) Procede de fabrication de cristaux de grenat
BE803528A (fr) Procede de fabrication de dispositifs semi-conducteurs
BE789174A (fr) Procede de fabrication de circuits
BE786889A (fr) Procede de fabrication de dispositifs a semi-conducteurs
BE778430A (fr) Procede de fabrication de dispositifs
BE768643A (fr) Procede de fabrication de gaufrettes semiconductrices ultraminces
RO64679A (fr) Procede pour la fabrication du magnesie agglutinee
FR2298189A1 (fr) Procede pour fabriquer des dispositifs semicon
CH548374A (fr) Procede de fabrication de cyclo-alcanonoximes.
BE789252A (fr) Procede de fabrication de la methylcobalamine
BE781377A (fr) Procede de fabrication de phenoxyphenols ou de chlorophenoxyphenols
BE777920A (fr) Procede de fabrication de socles pour plantes
BE766651A (fr) Procede pour la fabrication de dispositifs semiconducteurs a circuits integres