FR2394894A1 - Dispositif de prise de contact sur un element semiconducteur - Google Patents

Dispositif de prise de contact sur un element semiconducteur

Info

Publication number
FR2394894A1
FR2394894A1 FR7718623A FR7718623A FR2394894A1 FR 2394894 A1 FR2394894 A1 FR 2394894A1 FR 7718623 A FR7718623 A FR 7718623A FR 7718623 A FR7718623 A FR 7718623A FR 2394894 A1 FR2394894 A1 FR 2394894A1
Authority
FR
France
Prior art keywords
semiconductor element
taking device
titanium
contact taking
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7718623A
Other languages
English (en)
Other versions
FR2394894B1 (fr
Inventor
Jean-Claude Carballes
Alain Bodere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7718623A priority Critical patent/FR2394894A1/fr
Priority to GB25421/78A priority patent/GB1600474A/en
Priority to US05/915,117 priority patent/US4238764A/en
Priority to DE19782826569 priority patent/DE2826569A1/de
Priority to CA305,671A priority patent/CA1105599A/fr
Publication of FR2394894A1 publication Critical patent/FR2394894A1/fr
Application granted granted Critical
Publication of FR2394894B1 publication Critical patent/FR2394894B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention a pour objet un dispositif de prise de contact sur un élément semiconducteur. La face supérieure de l'élément en arséniure de gallium est recouverte en partie de titane formant avec l'arséniure de gallium un contact ohmique de faible résistivité. L'ensemble est recouvert d'or formant avec l'As Ga un contact ohmique de résistivité beaucoup plus élevée. Les lignes de courant sont ainsi localisées sous le titane. L'invention s'applique tout particulièrement aux diodes << laser >>.
FR7718623A 1977-06-17 1977-06-17 Dispositif de prise de contact sur un element semiconducteur Granted FR2394894A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7718623A FR2394894A1 (fr) 1977-06-17 1977-06-17 Dispositif de prise de contact sur un element semiconducteur
GB25421/78A GB1600474A (en) 1977-06-17 1978-05-31 Electroluminescent diode and a method for making it
US05/915,117 US4238764A (en) 1977-06-17 1978-06-13 Solid state semiconductor element and contact thereupon
DE19782826569 DE2826569A1 (de) 1977-06-17 1978-06-16 Vorrichtung und verfahren zum herstellen eines kontaktanschlusses an einem halbleiterelement
CA305,671A CA1105599A (fr) 1977-06-17 1978-06-16 Dispositif d'etablissement de contact avec un element semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7718623A FR2394894A1 (fr) 1977-06-17 1977-06-17 Dispositif de prise de contact sur un element semiconducteur

Publications (2)

Publication Number Publication Date
FR2394894A1 true FR2394894A1 (fr) 1979-01-12
FR2394894B1 FR2394894B1 (fr) 1980-02-29

Family

ID=9192218

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718623A Granted FR2394894A1 (fr) 1977-06-17 1977-06-17 Dispositif de prise de contact sur un element semiconducteur

Country Status (5)

Country Link
US (1) US4238764A (fr)
CA (1) CA1105599A (fr)
DE (1) DE2826569A1 (fr)
FR (1) FR2394894A1 (fr)
GB (1) GB1600474A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2499318A1 (fr) * 1981-02-04 1982-08-06 Radiotechnique Compelec Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede
EP0035118A3 (en) * 1980-02-28 1983-06-22 Tokyo Shibaura Denki Kabushiki Kaisha Iii - v group compound semiconductor light-emitting element and method of producing the same
EP0170481A3 (en) * 1984-07-24 1987-05-13 Nec Corporation Semiconductor light emitting device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH638641A5 (de) * 1978-11-17 1983-09-30 Univ Bern Inst Fuer Angewandte Halbleiterbauelement, verfahren zu dessen herstellung und verwendung des halbleiterbauelements.
FR2488049A1 (fr) * 1980-07-31 1982-02-05 Bouley Jean Source lumineuse a jonction semiconductrice, notamment source-laser, utilisant des diodes schottky, et procede de fabrication
JPH0722141B2 (ja) * 1984-03-07 1995-03-08 住友電気工業株式会社 半導体素子の製造方法
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
JP3314616B2 (ja) * 1995-10-05 2002-08-12 株式会社デンソー 大出力用半導体レーザ素子
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
EP1523776B1 (fr) * 2002-07-22 2019-05-15 Cree, Inc. Diode electroluminescente comprenant des couches barrieres et procede de fabrication correspondant

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290127A (en) * 1964-03-30 1966-12-06 Bell Telephone Labor Inc Barrier diode with metal contact and method of making
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
US3616380A (en) * 1968-11-22 1971-10-26 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3599060A (en) * 1968-11-25 1971-08-10 Gen Electric A multilayer metal contact for semiconductor device
US3585075A (en) * 1969-02-26 1971-06-15 Bell Telephone Labor Inc Schottky barrier diode
FR2120037B1 (fr) * 1970-12-29 1977-08-05 Licentia Gmbh
US3765970A (en) * 1971-06-24 1973-10-16 Rca Corp Method of making beam leads for semiconductor devices
US3751292A (en) * 1971-08-20 1973-08-07 Motorola Inc Multilayer metallization system
DE2315710C3 (de) * 1973-03-29 1975-11-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Halbleiteranordnung
US3894895A (en) * 1973-10-29 1975-07-15 Trw Inc Mesa etching without overhang for semiconductor devices
JPS51147253A (en) * 1975-06-13 1976-12-17 Nec Corp Structure of electrode terminal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0035118A3 (en) * 1980-02-28 1983-06-22 Tokyo Shibaura Denki Kabushiki Kaisha Iii - v group compound semiconductor light-emitting element and method of producing the same
FR2499318A1 (fr) * 1981-02-04 1982-08-06 Radiotechnique Compelec Procede de realisation d'une diode optoelectronique au gaalas et diode obtenue par ce procede
EP0170481A3 (en) * 1984-07-24 1987-05-13 Nec Corporation Semiconductor light emitting device

Also Published As

Publication number Publication date
US4238764A (en) 1980-12-09
CA1105599A (fr) 1981-07-21
FR2394894B1 (fr) 1980-02-29
DE2826569A1 (de) 1979-01-04
GB1600474A (en) 1981-10-14

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Legal Events

Date Code Title Description
ST Notification of lapse