BE793097A - Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium - Google Patents

Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium

Info

Publication number
BE793097A
BE793097A BE793097DA BE793097A BE 793097 A BE793097 A BE 793097A BE 793097D A BE793097D A BE 793097DA BE 793097 A BE793097 A BE 793097A
Authority
BE
Belgium
Prior art keywords
tantalum
coefficient
adjusting
resistance
function
Prior art date
Application number
Other languages
English (en)
Inventor
J M Chilton
D Jaffe
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE793097A publication Critical patent/BE793097A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Heat Treatment Of Nonferrous Metals Or Alloys (AREA)
  • Physical Vapour Deposition (AREA)
BE793097D 1971-12-30 Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium BE793097A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21420571A 1971-12-30 1971-12-30
US24363072A 1972-04-13 1972-04-13

Publications (1)

Publication Number Publication Date
BE793097A true BE793097A (fr) 1973-04-16

Family

ID=26908776

Family Applications (1)

Application Number Title Priority Date Filing Date
BE793097D BE793097A (fr) 1971-12-30 Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium

Country Status (9)

Country Link
JP (1) JPS5436564B2 (fr)
BE (1) BE793097A (fr)
CA (1) CA971649A (fr)
DE (1) DE2262022C2 (fr)
FR (1) FR2167177A5 (fr)
GB (1) GB1379510A (fr)
IT (1) IT976172B (fr)
NL (1) NL7217204A (fr)
SE (1) SE382714B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114861A (ja) * 1974-07-30 1976-02-05 Toyo Satsushi Kogyo Kk Damiiburotsuku
DE4028776C2 (de) * 1990-07-03 1994-03-10 Samsung Electronics Co Ltd Verfahren zur Bildung einer metallischen Verdrahtungsschicht und Füllen einer Kontaktöffnung in einem Halbleiterbauelement
DE4215664C1 (de) * 1992-05-13 1993-11-25 Mtu Muenchen Gmbh Verfahren zum Aufbringen von metallischen Zwischenschichten und seine Anwendung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3159556A (en) * 1960-12-08 1964-12-01 Bell Telephone Labor Inc Stabilized tantalum film resistors
NL124711C (fr) * 1961-10-03
US3261082A (en) * 1962-03-27 1966-07-19 Ibm Method of tailoring thin film impedance devices
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits
US3420706A (en) * 1964-06-23 1969-01-07 Bell Telephone Labor Inc Technique for fabrication of printed circuit resistors
US3558461A (en) * 1968-10-28 1971-01-26 Bell Telephone Labor Inc Thin film resistor and preparation thereof

Also Published As

Publication number Publication date
IT976172B (it) 1974-08-20
DE2262022C2 (de) 1982-03-25
SE382714B (sv) 1976-02-09
JPS5436564B2 (fr) 1979-11-09
NL7217204A (fr) 1973-07-03
GB1379510A (en) 1975-01-02
JPS4874411A (fr) 1973-10-06
DE2262022A1 (de) 1973-07-05
FR2167177A5 (fr) 1973-08-17
CA971649A (en) 1975-07-22

Similar Documents

Publication Publication Date Title
RO62435A (fr) Procede pour la preparation des 1,2,4-triazolenucleosides
BE792326A (fr) Procede pour la preparation d'halogenohydrines
RO62784A (fr) Procede pour la preparation des derives substitues du 1,2,4-triazole
BE778509A (fr) Procede de coulee d'aluminium en continu
BE821983A (fr) Procede pour la preparation d'hydroxycholesterines
RO62762A (fr) Procede pour la preparation des(1,5a)-pyrimidines 3,5,7-tri-substitues
RO62428A (fr) Procede pour la preparation des thyeno-(3,2-d)-pyrimidines
BE822990A (fr) Procede pour la preparation d'hexamethyltetraline
RO66825A (fr) Procede pour la preparation de l'acetate de trans-7-cis-9-dodecadien-1-yl
BE812104A (fr) Procede pour la preparation d'aldehydes
CH555410A (fr) Procede de production continue d'aluminium.
BE785344A (fr) Procede de preparation d'alcenyl-silanes
RO63551A (fr) Procede pour la preparation des thieno-(3,2-d)-pyrimidines
BE793097A (fr) Procede pour ajuster le coefficient de resistance en fonction de la temperature d'alliages tantale-aluminium
RO63031A (fr) Procede pour la preparation des pyrido-(3,2-d)-pyrimidi
RO63911A (fr) Procede pour la preparation des 2-amino-5-alkyle-1,3,4-thiadiazoles
RO71810A (fr) Procede pour la preparation des composes de 4-(4-biphenylyle)-alcool-butilique
BE847490A (fr) Procede pour la production de bandes ou de feuilles en cuivre ou en alliages de cuivre presentant des caracteristiques mecaniques isotropiques,
RO63035A (fr) Procede pour la preparation des 2-phenylaminoimidazolines-(2)-substitues
BE779018A (fr) Procede pour la preparation d'isothiocyanates d'alkyle
RO64268A (fr) Procede pour la preparation des quinoxalyndiones substitues
BE787753A (fr) Procede pour la preparation d'esters de
BE869767A (fr) Procede pour la preparation continue d'aldehydes
RO68939A (fr) Procede pour la preparation de isoxazolpyrimidines substitues
RO62467A (fr) Procede pour la preparation des 1-hydrocarbyl-3,4,5-tribrompyrazoles substitues