BE812370A - Dispositif de transfert de charge - Google Patents

Dispositif de transfert de charge

Info

Publication number: BE812370A
Authority: BE; Belgium
Prior art keywords: transfer device; charge transfer; charge; transfer
Prior art date: 1973-03-16

Application number

BE142060A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-03-16

Filing date

1974-03-15

Publication date

1974-07-01

1974-03-15 Application filed filed Critical

1974-07-01 Publication of BE812370A publication Critical patent/BE812370A/fr

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

BE142060A 1973-03-16 1974-03-15 Dispositif de transfert de charge BE812370A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US05/342,173 US4051505A (en)	1973-03-16	1973-03-16	Two-dimensional transfer in charge transfer device

Publications (1)

Publication Number	Publication Date
BE812370A true BE812370A (fr)	1974-07-01

Family

ID=23340682

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE142060A BE812370A (fr)	1973-03-16	1974-03-15	Dispositif de transfert de charge

Country Status (10)

Country	Link
US (1)	US4051505A (fr)
JP (1)	JPS49123285A (fr)
BE (1)	BE812370A (fr)
CA (1)	CA1003962A (fr)
DE (1)	DE2412465A1 (fr)
FR (1)	FR2221819B1 (fr)
GB (1)	GB1433723A (fr)
IT (1)	IT1003792B (fr)
NL (1)	NL7403523A (fr)
SE (1)	SE398791B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4125786A (en) *	1977-08-19	1978-11-14	General Electric Company	Charge transfer memory apparatus
JPS5456967A (en) *	1977-10-15	1979-05-08	Kobe Steel Ltd	Indirect extrusion method
US4237389A (en) *	1978-09-01	1980-12-02	Trw Inc.	Charge coupled device channel crossover circuit
US4291239A (en) *	1980-02-25	1981-09-22	Rca Corporation	Architecture line-transfer CCD imagers
US4967250A (en) *	1987-05-05	1990-10-30	Hughes Aircraft Company	Charge-coupled device with focused ion beam fabrication
WO1988009059A1 (fr) *	1987-05-05	1988-11-17	Hughes Aircraft Company	Dispositif a couplage de charge avec fabrication d'un faisceau d'ions focalise
DE3715675A1 (de) *	1987-05-11	1988-12-01	Messerschmitt Boelkow Blohm	Halbleiterelement
US5760431A (en) *	1995-11-29	1998-06-02	Massachusetts Institute Of Technology	Multidirectional transfer charge-coupled device
US10373962B2 (en)	2017-05-26	2019-08-06	Taiwan Semiconductor Manufacturing Company, Ltd.	Semiconductor device including trimmed-gates and method for generating layout of same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
USRE27775E (en)	1968-02-08	1973-10-09		Photoelectric induced i -n junction devices
CA1019442A (en) *	1971-01-14	1977-10-18	Rca Corporation	Charge coupled random access memory using semiconductor bit line
US3720922A (en) *	1971-03-17	1973-03-13	Rca Corp	Charge coupled memory
US3789267A (en) *	1971-06-28	1974-01-29	Bell Telephone Labor Inc	Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel

1973
- 1973-03-16 US US05/342,173 patent/US4051505A/en not_active Expired - Lifetime
- 1973-10-31 CA CA184,763A patent/CA1003962A/en not_active Expired
1974
- 1974-03-05 SE SE7402919A patent/SE398791B/xx unknown
- 1974-03-12 GB GB1091674A patent/GB1433723A/en not_active Expired
- 1974-03-15 BE BE142060A patent/BE812370A/fr not_active IP Right Cessation
- 1974-03-15 DE DE2412465A patent/DE2412465A1/de not_active Withdrawn
- 1974-03-15 NL NL7403523A patent/NL7403523A/xx unknown
- 1974-03-15 FR FR7408899A patent/FR2221819B1/fr not_active Expired
- 1974-03-15 IT IT49324/74A patent/IT1003792B/it active
- 1974-03-16 JP JP49029638A patent/JPS49123285A/ja active Pending

Also Published As

Publication number	Publication date
GB1433723A (en)	1976-04-28
FR2221819B1 (fr)	1978-01-06
JPS49123285A (fr)	1974-11-26
US4051505A (en)	1977-09-27
NL7403523A (fr)	1974-09-18
IT1003792B (it)	1976-06-10
SE398791B (sv)	1978-01-16
CA1003962A (en)	1977-01-18
FR2221819A1 (fr)	1974-10-11
DE2412465A1 (de)	1974-09-26

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Legal Events

Date

Code

Title

Description

1985-09-30

RE

Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19850315