CA1003962A - Two-dimensional transfer in charge transfer devices - Google Patents
Two-dimensional transfer in charge transfer devicesInfo
- Publication number
- CA1003962A CA1003962A CA184,763A CA184763A CA1003962A CA 1003962 A CA1003962 A CA 1003962A CA 184763 A CA184763 A CA 184763A CA 1003962 A CA1003962 A CA 1003962A
- Authority
- CA
- Canada
- Prior art keywords
- transfer
- dimensional
- devices
- charge
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/342,173 US4051505A (en) | 1973-03-16 | 1973-03-16 | Two-dimensional transfer in charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1003962A true CA1003962A (en) | 1977-01-18 |
Family
ID=23340682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA184,763A Expired CA1003962A (en) | 1973-03-16 | 1973-10-31 | Two-dimensional transfer in charge transfer devices |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4051505A (fr) |
| JP (1) | JPS49123285A (fr) |
| BE (1) | BE812370A (fr) |
| CA (1) | CA1003962A (fr) |
| DE (1) | DE2412465A1 (fr) |
| FR (1) | FR2221819B1 (fr) |
| GB (1) | GB1433723A (fr) |
| IT (1) | IT1003792B (fr) |
| NL (1) | NL7403523A (fr) |
| SE (1) | SE398791B (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4125786A (en) * | 1977-08-19 | 1978-11-14 | General Electric Company | Charge transfer memory apparatus |
| JPS5456967A (en) * | 1977-10-15 | 1979-05-08 | Kobe Steel Ltd | Indirect extrusion method |
| US4237389A (en) * | 1978-09-01 | 1980-12-02 | Trw Inc. | Charge coupled device channel crossover circuit |
| US4291239A (en) * | 1980-02-25 | 1981-09-22 | Rca Corporation | Architecture line-transfer CCD imagers |
| KR910009338B1 (ko) * | 1987-05-05 | 1991-11-11 | 휴우즈 에어크라프트 캄파니 | 집속된 이온 비임을 발생시키는 전하결합 장치 및 이의 제조방법 |
| US4967250A (en) * | 1987-05-05 | 1990-10-30 | Hughes Aircraft Company | Charge-coupled device with focused ion beam fabrication |
| DE3715675A1 (de) * | 1987-05-11 | 1988-12-01 | Messerschmitt Boelkow Blohm | Halbleiterelement |
| US5760431A (en) * | 1995-11-29 | 1998-06-02 | Massachusetts Institute Of Technology | Multidirectional transfer charge-coupled device |
| US10373962B2 (en) | 2017-05-26 | 2019-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device including trimmed-gates and method for generating layout of same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE27775E (en) | 1968-02-08 | 1973-10-09 | Photoelectric induced i -n junction devices | |
| CA1019442A (en) * | 1971-01-14 | 1977-10-18 | Rca Corporation | Charge coupled random access memory using semiconductor bit line |
| US3720922A (en) * | 1971-03-17 | 1973-03-13 | Rca Corp | Charge coupled memory |
| US3789267A (en) * | 1971-06-28 | 1974-01-29 | Bell Telephone Labor Inc | Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel |
-
1973
- 1973-03-16 US US05/342,173 patent/US4051505A/en not_active Expired - Lifetime
- 1973-10-31 CA CA184,763A patent/CA1003962A/en not_active Expired
-
1974
- 1974-03-05 SE SE7402919A patent/SE398791B/xx unknown
- 1974-03-12 GB GB1091674A patent/GB1433723A/en not_active Expired
- 1974-03-15 NL NL7403523A patent/NL7403523A/xx unknown
- 1974-03-15 DE DE2412465A patent/DE2412465A1/de not_active Withdrawn
- 1974-03-15 IT IT49324/74A patent/IT1003792B/it active
- 1974-03-15 FR FR7408899A patent/FR2221819B1/fr not_active Expired
- 1974-03-15 BE BE142060A patent/BE812370A/fr not_active IP Right Cessation
- 1974-03-16 JP JP49029638A patent/JPS49123285A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2412465A1 (de) | 1974-09-26 |
| GB1433723A (en) | 1976-04-28 |
| SE398791B (sv) | 1978-01-16 |
| FR2221819B1 (fr) | 1978-01-06 |
| FR2221819A1 (fr) | 1974-10-11 |
| IT1003792B (it) | 1976-06-10 |
| US4051505A (en) | 1977-09-27 |
| NL7403523A (fr) | 1974-09-18 |
| BE812370A (fr) | 1974-07-01 |
| JPS49123285A (fr) | 1974-11-26 |
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