CA1003962A - Two-dimensional transfer in charge transfer devices - Google Patents

Two-dimensional transfer in charge transfer devices

Info

Publication number
CA1003962A
CA1003962A CA184,763A CA184763A CA1003962A CA 1003962 A CA1003962 A CA 1003962A CA 184763 A CA184763 A CA 184763A CA 1003962 A CA1003962 A CA 1003962A
Authority
CA
Canada
Prior art keywords
transfer
dimensional
devices
charge
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA184,763A
Other languages
English (en)
Other versions
CA184763S (en
Inventor
Robert H. Walden
Carlo H. Sequin
Robert H. Krambeck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1003962A publication Critical patent/CA1003962A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
CA184,763A 1973-03-16 1973-10-31 Two-dimensional transfer in charge transfer devices Expired CA1003962A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/342,173 US4051505A (en) 1973-03-16 1973-03-16 Two-dimensional transfer in charge transfer device

Publications (1)

Publication Number Publication Date
CA1003962A true CA1003962A (en) 1977-01-18

Family

ID=23340682

Family Applications (1)

Application Number Title Priority Date Filing Date
CA184,763A Expired CA1003962A (en) 1973-03-16 1973-10-31 Two-dimensional transfer in charge transfer devices

Country Status (10)

Country Link
US (1) US4051505A (fr)
JP (1) JPS49123285A (fr)
BE (1) BE812370A (fr)
CA (1) CA1003962A (fr)
DE (1) DE2412465A1 (fr)
FR (1) FR2221819B1 (fr)
GB (1) GB1433723A (fr)
IT (1) IT1003792B (fr)
NL (1) NL7403523A (fr)
SE (1) SE398791B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125786A (en) * 1977-08-19 1978-11-14 General Electric Company Charge transfer memory apparatus
JPS5456967A (en) * 1977-10-15 1979-05-08 Kobe Steel Ltd Indirect extrusion method
US4237389A (en) * 1978-09-01 1980-12-02 Trw Inc. Charge coupled device channel crossover circuit
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
KR910009338B1 (ko) * 1987-05-05 1991-11-11 휴우즈 에어크라프트 캄파니 집속된 이온 비임을 발생시키는 전하결합 장치 및 이의 제조방법
US4967250A (en) * 1987-05-05 1990-10-30 Hughes Aircraft Company Charge-coupled device with focused ion beam fabrication
DE3715675A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiterelement
US5760431A (en) * 1995-11-29 1998-06-02 Massachusetts Institute Of Technology Multidirectional transfer charge-coupled device
US10373962B2 (en) 2017-05-26 2019-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including trimmed-gates and method for generating layout of same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE27775E (en) 1968-02-08 1973-10-09 Photoelectric induced i -n junction devices
CA1019442A (en) * 1971-01-14 1977-10-18 Rca Corporation Charge coupled random access memory using semiconductor bit line
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel

Also Published As

Publication number Publication date
DE2412465A1 (de) 1974-09-26
GB1433723A (en) 1976-04-28
SE398791B (sv) 1978-01-16
FR2221819B1 (fr) 1978-01-06
FR2221819A1 (fr) 1974-10-11
IT1003792B (it) 1976-06-10
US4051505A (en) 1977-09-27
NL7403523A (fr) 1974-09-18
BE812370A (fr) 1974-07-01
JPS49123285A (fr) 1974-11-26

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