BE813051A - Procede pour fabriquer des circuits integres comportant des transistors a effet de champ a canaux complementaires - Google Patents

Procede pour fabriquer des circuits integres comportant des transistors a effet de champ a canaux complementaires

Info

Publication number
BE813051A
BE813051A BE142638A BE142638A BE813051A BE 813051 A BE813051 A BE 813051A BE 142638 A BE142638 A BE 142638A BE 142638 A BE142638 A BE 142638A BE 813051 A BE813051 A BE 813051A
Authority
BE
Belgium
Prior art keywords
integrated circuits
effect transistors
channel field
circuits including
manufacturing integrated
Prior art date
Application number
BE142638A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE813051A publication Critical patent/BE813051A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
BE142638A 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ a canaux complementaires BE813051A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (de) 1973-03-30 1973-03-30 Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren

Publications (1)

Publication Number Publication Date
BE813051A true BE813051A (fr) 1974-07-15

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
BE142638A BE813051A (fr) 1973-03-30 1974-03-29 Procede pour fabriquer des circuits integres comportant des transistors a effet de champ a canaux complementaires

Country Status (13)

Country Link
US (1) US3919765A (de)
JP (1) JPS49131085A (de)
AT (1) AT339377B (de)
BE (1) BE813051A (de)
CA (1) CA1005175A (de)
CH (1) CH570042A5 (de)
DE (1) DE2316095A1 (de)
FR (1) FR2223838B1 (de)
GB (1) GB1443480A (de)
IT (1) IT1011152B (de)
LU (1) LU69729A1 (de)
NL (1) NL7404337A (de)
SE (1) SE386542B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100226730B1 (ko) * 1997-04-24 1999-10-15 구본준 씨모스펫 및 그 제조방법
ES2171044T3 (es) 1997-10-15 2002-08-16 Saes Pure Gas Inc Sistema de purificacion de gas dotado de un dispositivo de seguridad y procedimiento de purificacion de gas.
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
AT339377B (de) 1977-10-10
GB1443480A (en) 1976-07-21
FR2223838A1 (de) 1974-10-25
ATA217274A (de) 1977-02-15
IT1011152B (it) 1977-01-20
CH570042A5 (de) 1975-11-28
JPS49131085A (de) 1974-12-16
SE386542B (sv) 1976-08-09
US3919765A (en) 1975-11-18
FR2223838B1 (de) 1978-11-10
DE2316095A1 (de) 1974-10-10
CA1005175A (en) 1977-02-08
LU69729A1 (de) 1974-07-17
NL7404337A (de) 1974-10-02

Similar Documents

Publication Publication Date Title
BE817544A (fr) Procede pour fabriquer un dispositif comportant des transistors a effet de champ realises suivant la technique a mos complementaires
BE809264A (fr) Circuit integre a transistors a effet de champ
BE805485A (fr) Transistors a effet de champ complementaires et leur procede de fabrication
BE853547A (fr) Procede de fabrication de transistors a effet de champ
JPS5239381A (en) Insulated gate fet transistor
HK28081A (en) Process for fabricating insulated gate field effect transistor structure
CA994002A (en) Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
BE814300A (fr) Procede pour interconnecter des elements de circuit integre
BE813051A (fr) Procede pour fabriquer des circuits integres comportant des transistors a effet de champ a canaux complementaires
BE805480A (fr) Procede pour fabriquer des circuits a mos complementaires en couche mince
JPS5283181A (en) Insulated gate fet transistor device
FR2301922A1 (fr) Procede pour fabriquer un transistor commande en inverse
JPS5275943A (en) Dynamic shift register using insulated gate fet transistor
BE835288A (fr) Procede de fabrication de transistors a effet de champ perfectionnes
FR2289065A1 (fr) Amplificateur a transistors a effet de champ complementaires
FR2318500A1 (fr) Circuit a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire et son procede de fabrication
BE780695A (fr) Procede de fabrication d'un transistor a effet de champ
BE753453A (fr) Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede
BE813050A (fr) Procede pour fabriquer des circuits integres comportant des transistors a effet de champ possedant des etats de conduction differents
BE813048A (fr) Procede pour fabriquer des transistors a effet de champ en utilisant une getterisation selective
FR2275888A1 (fr) Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication
BE795737A (fr) Procede pour fabriquer des transistors a effet de champ a canal
BE810156A (fr) Circuit integre comportant des transistors a effet de champ
FR2298189A1 (fr) Procede pour fabriquer des dispositifs semicon
BE771608A (fr) Transistor a effet de champ et procede pour le former