SE386542B - Sett att tillverka integrerade kretsar med komplementer-kanal-felteffekttransistorer av olika konduktivitetstyp - Google Patents

Sett att tillverka integrerade kretsar med komplementer-kanal-felteffekttransistorer av olika konduktivitetstyp

Info

Publication number
SE386542B
SE386542B SE7404192A SE7404192A SE386542B SE 386542 B SE386542 B SE 386542B SE 7404192 A SE7404192 A SE 7404192A SE 7404192 A SE7404192 A SE 7404192A SE 386542 B SE386542 B SE 386542B
Authority
SE
Sweden
Prior art keywords
complements
integrated circuits
channel field
power transistors
field power
Prior art date
Application number
SE7404192A
Other languages
English (en)
Swedish (sv)
Inventor
H Schlotterer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE386542B publication Critical patent/SE386542B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
SE7404192A 1973-03-30 1974-03-28 Sett att tillverka integrerade kretsar med komplementer-kanal-felteffekttransistorer av olika konduktivitetstyp SE386542B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2316095A DE2316095A1 (de) 1973-03-30 1973-03-30 Verfahren zur herstellung integrierter schaltungen mit komplementaer-kanal-feldeffekttransistoren

Publications (1)

Publication Number Publication Date
SE386542B true SE386542B (sv) 1976-08-09

Family

ID=5876571

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7404192A SE386542B (sv) 1973-03-30 1974-03-28 Sett att tillverka integrerade kretsar med komplementer-kanal-felteffekttransistorer av olika konduktivitetstyp

Country Status (13)

Country Link
US (1) US3919765A (de)
JP (1) JPS49131085A (de)
AT (1) AT339377B (de)
BE (1) BE813051A (de)
CA (1) CA1005175A (de)
CH (1) CH570042A5 (de)
DE (1) DE2316095A1 (de)
FR (1) FR2223838B1 (de)
GB (1) GB1443480A (de)
IT (1) IT1011152B (de)
LU (1) LU69729A1 (de)
NL (1) NL7404337A (de)
SE (1) SE386542B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2450408A1 (de) * 1974-10-23 1976-04-29 Siemens Ag Schaltungsanordnung in einer komplementaer-chl-technik
US4043025A (en) * 1975-05-08 1977-08-23 National Semiconductor Corporation Self-aligned CMOS process for bulk silicon and insulating substrate device
AT380974B (de) * 1982-04-06 1986-08-11 Shell Austria Verfahren zum gettern von halbleiterbauelementen
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
KR100226730B1 (ko) * 1997-04-24 1999-10-15 구본준 씨모스펫 및 그 제조방법
ES2171044T3 (es) 1997-10-15 2002-08-16 Saes Pure Gas Inc Sistema de purificacion de gas dotado de un dispositivo de seguridad y procedimiento de purificacion de gas.
US6068685A (en) * 1997-10-15 2000-05-30 Saes Pure Gas, Inc. Semiconductor manufacturing system with getter safety device
US6236089B1 (en) 1998-01-07 2001-05-22 Lg Semicon Co., Ltd. CMOSFET and method for fabricating the same
US8481372B2 (en) * 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3783052A (en) * 1972-11-10 1974-01-01 Motorola Inc Process for manufacturing integrated circuits on an alumina substrate
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet

Also Published As

Publication number Publication date
AT339377B (de) 1977-10-10
GB1443480A (en) 1976-07-21
FR2223838A1 (de) 1974-10-25
ATA217274A (de) 1977-02-15
IT1011152B (it) 1977-01-20
CH570042A5 (de) 1975-11-28
JPS49131085A (de) 1974-12-16
BE813051A (fr) 1974-07-15
US3919765A (en) 1975-11-18
FR2223838B1 (de) 1978-11-10
DE2316095A1 (de) 1974-10-10
CA1005175A (en) 1977-02-08
LU69729A1 (de) 1974-07-17
NL7404337A (de) 1974-10-02

Similar Documents

Publication Publication Date Title
JPS5533096A (en) Method of manufacturing integrated circuit having complementary field effect transistor
SE401292B (sv) Integrerad koppling med minst en logisk krets sammansatt av komplementera transistorer
AT361042B (de) Integrierte halbleiterschaltung
SE382283B (sv) Sett att framstella en halvledaranordning med ett monster av ledare.
SE405659B (sv) Sett att tillverka halvledaranordningar
SE399053B (sv) Sett att framstella polykristallin bornitrid
SE386542B (sv) Sett att tillverka integrerade kretsar med komplementer-kanal-felteffekttransistorer av olika konduktivitetstyp
SE390085B (sv) Sett att tillverka integrerade kretsar med minst en felteffekttransistor och med minst ett motstand pa ett gemensamt substrat
IT1012351B (it) Circuito integrato semiconduttore
BE824510A (fr) Circuit de transistors combines
IT979867B (it) Distribuzione di transistor in coppia per corrispondenti semi sezioni di circuito a caratteristiche sostanzialmente uguali
BE789174A (fr) Procede de fabrication de circuits
IT1058422B (it) Invertitore omos contenente due transistori mos complementari
SE407996B (sv) Halvledaranordning med komplementera transistorer och sett att framstella densamma
FR2300417A1 (fr) Circuit semi-conducteur integre a transistors complementaires pnp-npn
IT977793B (it) Cipcuito elettrico comprendente transistori ad effetto di campo e bipolari combinati
BE817663A (fr) Circuits integres
SE385752B (sv) Integrerad krets med felteffekttransistorer
SE386543B (sv) Sett att tillverka integrerade kretsar med felteffekttransistorer som har olika konduktivitetstillstand
IT1025191B (it) Procedimento perfezionato per la fabbricazione di circuiti integrati
SE390234B (sv) Sett att tillverka en integrerad halvledarkretsanordning innehallande atminstone en transistor
SE382889B (sv) Sett att tillverka p-kanal-felteffekttransistorer
SE405183B (sv) Sett att tillverka ett halvledardon i form av ett inkapslat halvledarelement
AT330301B (de) Halbleiterbestuckte umrichterschaltung
IT993007B (it) Circuito logico polifase impiegante transistori ad effetto di campo metallo isolatore semiconduttore complementari