BE818991A - Procede pour attaquer un oxyde de silicium pour y former un bord conique ou effile - Google Patents

Procede pour attaquer un oxyde de silicium pour y former un bord conique ou effile

Info

Publication number
BE818991A
BE818991A BE147738A BE147738A BE818991A BE 818991 A BE818991 A BE 818991A BE 147738 A BE147738 A BE 147738A BE 147738 A BE147738 A BE 147738A BE 818991 A BE818991 A BE 818991A
Authority
BE
Belgium
Prior art keywords
attacking
conical
silicon oxide
tapered edge
tapered
Prior art date
Application number
BE147738A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE818991A publication Critical patent/BE818991A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/73Etching of wafers, substrates or parts of devices using masks for insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/978Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
BE147738A 1973-08-20 1974-08-19 Procede pour attaquer un oxyde de silicium pour y former un bord conique ou effile BE818991A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00389718A US3839111A (en) 1973-08-20 1973-08-20 Method of etching silicon oxide to produce a tapered edge thereon

Publications (1)

Publication Number Publication Date
BE818991A true BE818991A (fr) 1974-12-16

Family

ID=23539436

Family Applications (1)

Application Number Title Priority Date Filing Date
BE147738A BE818991A (fr) 1973-08-20 1974-08-19 Procede pour attaquer un oxyde de silicium pour y former un bord conique ou effile

Country Status (13)

Country Link
US (1) US3839111A (it)
JP (1) JPS5633858B2 (it)
BE (1) BE818991A (it)
BR (1) BR7406683D0 (it)
CA (1) CA1031250A (it)
DE (1) DE2439300C2 (it)
FR (1) FR2241876B1 (it)
GB (1) GB1445659A (it)
IN (1) IN139623B (it)
IT (1) IT1022509B (it)
NL (1) NL7410810A (it)
SE (1) SE389427B (it)
YU (1) YU40106B (it)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359511C2 (de) * 1973-11-29 1987-03-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen
DE2432719B2 (de) * 1974-07-08 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens
NL7607298A (nl) * 1976-07-02 1978-01-04 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze.
US4052253A (en) * 1976-09-27 1977-10-04 Motorola, Inc. Semiconductor-oxide etchant
DE2658124C3 (de) * 1976-12-22 1982-05-06 Dynamit Nobel Ag, 5210 Troisdorf Verfahren zur Herstellung von Elektroschmelzkorund
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
JPS55163860A (en) * 1979-06-06 1980-12-20 Toshiba Corp Manufacture of semiconductor device
US4351698A (en) * 1981-10-16 1982-09-28 Memorex Corporation Variable sloped etching of thin film heads
JPS5898934A (ja) * 1981-12-08 1983-06-13 Matsushita Electronics Corp 半導体装置の製造方法
JPS58216445A (ja) * 1982-06-10 1983-12-16 Nec Corp 半導体装置およびその製造方法
US4698132A (en) * 1986-09-30 1987-10-06 Rca Corporation Method of forming tapered contact openings
JP2852355B2 (ja) * 1989-06-26 1999-02-03 ステラケミファ株式会社 微細加工表面処理剤
US5928969A (en) * 1996-01-22 1999-07-27 Micron Technology, Inc. Method for controlled selective polysilicon etching
JP2000508082A (ja) * 1996-03-22 2000-06-27 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング ドライエッチング後の側壁残さを除去するための溶液および方法
US6074951A (en) * 1997-05-29 2000-06-13 International Business Machines Corporation Vapor phase etching of oxide masked by resist or masking material
US5876879A (en) * 1997-05-29 1999-03-02 International Business Machines Corporation Oxide layer patterned by vapor phase etching
US5838055A (en) * 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US5930644A (en) * 1997-07-23 1999-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming a shallow trench isolation using oxide slope etching
US6762132B1 (en) * 2000-08-31 2004-07-13 Micron Technology, Inc. Compositions for dissolution of low-K dielectric films, and methods of use
US20050133479A1 (en) * 2003-12-19 2005-06-23 Youngner Dan W. Equipment and process for creating a custom sloped etch in a substrate
JP2007234754A (ja) * 2006-02-28 2007-09-13 Fujitsu Ltd レジストパターン形成方法及びレジストパターン形成装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1092740A (en) * 1966-07-15 1967-11-29 Standard Telephones Cables Ltd A method of masking the surface of a substrate
US3515607A (en) * 1967-06-21 1970-06-02 Western Electric Co Method of removing polymerised resist material from a substrate
US3642528A (en) * 1968-06-05 1972-02-15 Matsushita Electronics Corp Semiconductor device and method of making same
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3700508A (en) * 1970-06-25 1972-10-24 Gen Instrument Corp Fabrication of integrated microcircuit devices

Also Published As

Publication number Publication date
JPS5633858B2 (it) 1981-08-06
SE389427B (sv) 1976-11-01
DE2439300A1 (de) 1975-03-06
AU7229374A (en) 1976-02-19
DE2439300C2 (de) 1982-06-24
YU40106B (en) 1985-08-31
JPS5073574A (it) 1975-06-17
IN139623B (it) 1976-07-10
CA1031250A (en) 1978-05-16
NL7410810A (nl) 1975-02-24
IT1022509B (it) 1978-04-20
YU227474A (en) 1982-05-31
BR7406683D0 (pt) 1975-06-03
FR2241876B1 (it) 1978-01-27
GB1445659A (en) 1976-08-11
US3839111A (en) 1974-10-01
SE7409819L (it) 1975-02-21
FR2241876A1 (it) 1975-03-21

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