BE826870A - Enceinte de reaction pour le depot de matiere semi-conductrice sur des corps de support chauffes - Google Patents

Enceinte de reaction pour le depot de matiere semi-conductrice sur des corps de support chauffes

Info

Publication number: BE826870A
Authority: BE; Belgium
Prior art keywords: electrode; reaction chamber; semiconductor material; support bodies; reaction
Prior art date: 1974-07-05

Application number

BE154492A

Other languages

English (en)

French (fr)

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-07-05

Filing date

1975-03-19

Publication date

1975-07-16

1974-07-05 Priority claimed from DE2432383A external-priority patent/DE2432383C2/de

1975-03-19 Application filed filed Critical

1975-07-16 Publication of BE826870A publication Critical patent/BE826870A/fr

Links

239000000463 material Substances 0.000 title claims description 10
239000004065 semiconductor Substances 0.000 title claims description 9
229910052751 metal Inorganic materials 0.000 claims description 17
239000002184 metal Substances 0.000 claims description 16
238000000151 deposition Methods 0.000 claims description 6
239000002826 coolant Substances 0.000 claims description 4
239000007788 liquid Substances 0.000 claims description 3
239000013013 elastic material Substances 0.000 claims description 2
239000010946 fine silver Substances 0.000 description 11
239000012495 reaction gas Substances 0.000 description 11
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
229910052709 silver Inorganic materials 0.000 description 8
239000004332 silver Substances 0.000 description 8
239000004020 conductor Substances 0.000 description 7
229910000831 Steel Inorganic materials 0.000 description 6
239000010959 steel Substances 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
230000008021 deposition Effects 0.000 description 4
239000010453 quartz Substances 0.000 description 4
238000007789 sealing Methods 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
238000005485 electric heating Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
-1 polytetrafluoroethylene Polymers 0.000 description 3
229920001343 polytetrafluoroethylene Polymers 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
230000005611 electricity Effects 0.000 description 2
239000007789 gas Substances 0.000 description 2
239000004810 polytetrafluoroethylene Substances 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
229910000881 Cu alloy Inorganic materials 0.000 description 1
238000010276 construction Methods 0.000 description 1
239000000112 cooling gas Substances 0.000 description 1
239000000498 cooling water Substances 0.000 description 1
238000007599 discharging Methods 0.000 description 1
238000005242 forging Methods 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000000034 method Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
239000011148 porous material Substances 0.000 description 1
238000003825 pressing Methods 0.000 description 1
238000005096 rolling process Methods 0.000 description 1
239000003566 sealing material Substances 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
239000007787 solid Substances 0.000 description 1
125000006850 spacer group Chemical group 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Physical Or Chemical Processes And Apparatus (AREA)

BE154492A 1974-07-05 1975-03-19 Enceinte de reaction pour le depot de matiere semi-conductrice sur des corps de support chauffes BE826870A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2432383A DE2432383C2 (de)	1973-11-22	1974-07-05	Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper

Publications (1)

Publication Number	Publication Date
BE826870A true BE826870A (fr)	1975-07-16

Family

ID=5919817

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE154492A BE826870A (fr)	1974-07-05	1975-03-19	Enceinte de reaction pour le depot de matiere semi-conductrice sur des corps de support chauffes

Country Status (3)

Country	Link
BE (1)	BE826870A (pl)
IT (1)	IT1039434B (pl)
PL (1)	PL99018B1 (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20100058988A1 (en) *	2008-09-09	2010-03-11	Mitsubishi Materials Corporation	Manufacturing apparatus of polycrystalline silicon

1975
- 1975-03-19 BE BE154492A patent/BE826870A/fr unknown
- 1975-06-27 IT IT2485675A patent/IT1039434B/it active
- 1975-07-04 PL PL18182675A patent/PL99018B1/pl unknown

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US20100058988A1 (en) *	2008-09-09	2010-03-11	Mitsubishi Materials Corporation	Manufacturing apparatus of polycrystalline silicon
EP2161241A3 (en) *	2008-09-09	2010-12-08	Mitsubishi Materials Corporation	Manufacturing apparatus of polycrystalline silicon
US8652256B2 (en)	2008-09-09	2014-02-18	Mitsubishi Materials Corporation	Manufacturing apparatus of polycrystalline silicon

Also Published As

Publication number	Publication date
PL99018B1 (pl)	1978-06-30
IT1039434B (it)	1979-12-10

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