IT1039434B - Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati - Google Patents

Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati

Info

Publication number
IT1039434B
IT1039434B IT2485675A IT2485675A IT1039434B IT 1039434 B IT1039434 B IT 1039434B IT 2485675 A IT2485675 A IT 2485675A IT 2485675 A IT2485675 A IT 2485675A IT 1039434 B IT1039434 B IT 1039434B
Authority
IT
Italy
Prior art keywords
gas
reaction
electrodes
semiconductor
deposn
Prior art date
Application number
IT2485675A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2432383A external-priority patent/DE2432383C2/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1039434B publication Critical patent/IT1039434B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
IT2485675A 1974-07-05 1975-06-27 Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati IT1039434B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2432383A DE2432383C2 (de) 1973-11-22 1974-07-05 Reaktionsgefäß zum Abscheiden von Halbleitermaterial auf erhitzte Trägerkörper

Publications (1)

Publication Number Publication Date
IT1039434B true IT1039434B (it) 1979-12-10

Family

ID=5919817

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2485675A IT1039434B (it) 1974-07-05 1975-06-27 Recipiente di reazione per depositare un materiale semiconduttore su supporti riscaldati

Country Status (3)

Country Link
BE (1) BE826870A (it)
IT (1) IT1039434B (it)
PL (1) PL99018B1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5338574B2 (ja) * 2008-09-09 2013-11-13 三菱マテリアル株式会社 多結晶シリコン製造装置

Also Published As

Publication number Publication date
BE826870A (fr) 1975-07-16
PL99018B1 (pl) 1978-06-30

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