BE840685A - Circuits a semi-conducteurs - Google Patents

Circuits a semi-conducteurs

Info

Publication number
BE840685A
BE840685A BE166103A BE166103A BE840685A BE 840685 A BE840685 A BE 840685A BE 166103 A BE166103 A BE 166103A BE 166103 A BE166103 A BE 166103A BE 840685 A BE840685 A BE 840685A
Authority
BE
Belgium
Prior art keywords
semiconductor circuits
circuits
semiconductor
Prior art date
Application number
BE166103A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE840685A publication Critical patent/BE840685A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation
BE166103A 1975-04-18 1976-04-13 Circuits a semi-conducteurs BE840685A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/569,581 US4007381A (en) 1975-04-18 1975-04-18 Balanced regenerative charge detection circuit for semiconductor charge transfer devices

Publications (1)

Publication Number Publication Date
BE840685A true BE840685A (fr) 1976-08-02

Family

ID=24276016

Family Applications (1)

Application Number Title Priority Date Filing Date
BE166103A BE840685A (fr) 1975-04-18 1976-04-13 Circuits a semi-conducteurs

Country Status (9)

Country Link
US (1) US4007381A (fr)
JP (1) JPS5921117B2 (fr)
BE (1) BE840685A (fr)
CA (1) CA1081362A (fr)
DE (1) DE2616477A1 (fr)
FR (1) FR2308165A1 (fr)
GB (1) GB1536571A (fr)
IT (1) IT1059472B (fr)
NL (1) NL7603911A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2258783B1 (fr) * 1974-01-25 1977-09-16 Valentin Camille
US4021682A (en) * 1975-06-30 1977-05-03 Honeywell Information Systems, Inc. Charge detectors for CCD registers
JPS5328383A (en) * 1976-08-02 1978-03-16 Toshiba Corp Charge t ransfer device
JPS5938670B2 (ja) * 1976-10-15 1984-09-18 日本電気株式会社 差信号増巾回路
US4162416A (en) * 1978-01-16 1979-07-24 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4185324A (en) * 1978-08-03 1980-01-22 Ncr Corporation Data storage system
US4202046A (en) * 1978-09-01 1980-05-06 Ncr Corporation Data storage system for storing multilevel signals
US4274013A (en) * 1979-02-09 1981-06-16 Bell Telephone Laboratories, Incorporated Sense amplifier
JPS58177596A (ja) * 1982-04-13 1983-10-18 Sony Corp 固体デジタルメモリの信号出力回路
JPS6010495A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd センスアンプ
US4539495A (en) * 1984-05-24 1985-09-03 General Electric Company Voltage comparator
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
US5101174A (en) * 1990-10-31 1992-03-31 Texas Instruments Incorporated Advanced charge detection amplifier for high performance image sensors

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
US3760381A (en) * 1972-06-30 1973-09-18 Ibm Stored charge memory detection circuit
DE2309192C3 (de) * 1973-02-23 1975-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung
US3806898A (en) * 1973-06-29 1974-04-23 Ibm Regeneration of dynamic monolithic memories
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices
US3891977A (en) * 1974-07-15 1975-06-24 Fairchild Camera Instr Co Charge coupled memory device

Also Published As

Publication number Publication date
US4007381A (en) 1977-02-08
FR2308165A1 (fr) 1976-11-12
JPS5921117B2 (ja) 1984-05-17
FR2308165B1 (fr) 1981-10-09
GB1536571A (en) 1978-12-20
DE2616477A1 (de) 1976-10-28
NL7603911A (nl) 1976-10-20
JPS51129146A (en) 1976-11-10
CA1081362A (fr) 1980-07-08
IT1059472B (it) 1982-05-31

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19840413