BE849065A - Procede pour realiser des angles de talus determines pour des bords de structures realisees par attaque chimique - Google Patents
Procede pour realiser des angles de talus determines pour des bords de structures realisees par attaque chimiqueInfo
- Publication number
- BE849065A BE849065A BE172972A BE172972A BE849065A BE 849065 A BE849065 A BE 849065A BE 172972 A BE172972 A BE 172972A BE 172972 A BE172972 A BE 172972A BE 849065 A BE849065 A BE 849065A
- Authority
- BE
- Belgium
- Prior art keywords
- edges
- chemical attack
- slope angles
- determined slope
- structures achieved
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
- H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19752554638 DE2554638A1 (de) | 1975-12-04 | 1975-12-04 | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE849065A true BE849065A (fr) | 1977-04-01 |
Family
ID=5963486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE172972A BE849065A (fr) | 1975-12-04 | 1976-12-03 | Procede pour realiser des angles de talus determines pour des bords de structures realisees par attaque chimique |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5269576A (fr) |
| BE (1) | BE849065A (fr) |
| DE (1) | DE2554638A1 (fr) |
| FR (1) | FR2334199A1 (fr) |
| GB (1) | GB1551290A (fr) |
| IT (1) | IT1065165B (fr) |
| NL (1) | NL7613275A (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD136670A1 (de) * | 1976-02-04 | 1979-07-18 | Rudolf Sacher | Verfahren und vorrichtung zur herstellung von halbleiterstrukturen |
| DE2754549A1 (de) * | 1977-12-07 | 1979-06-13 | Siemens Ag | Optoelektronischer sensor nach dem prinzip der ladungsinjektion |
| DE2837485A1 (de) * | 1978-08-28 | 1980-04-17 | Siemens Ag | Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher |
| JPS55157234A (en) * | 1979-05-25 | 1980-12-06 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| JPS60128622A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | エツチング法 |
| GB2165692B (en) * | 1984-08-25 | 1989-05-04 | Ricoh Kk | Manufacture of interconnection patterns |
| DE68925774T2 (de) * | 1988-10-02 | 1996-08-08 | Canon Kk | Feinbearbeitungsmethode für kristallines Material |
| DE4140330C1 (fr) * | 1991-12-06 | 1993-03-18 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
| DE19837395C2 (de) | 1998-08-18 | 2001-07-19 | Infineon Technologies Ag | Verfahren zur Herstellung eines eine strukturierte Isolationsschicht enthaltenden Halbleiterbauelements |
| US6352934B1 (en) * | 1999-08-26 | 2002-03-05 | Infineon Technologies Ag | Sidewall oxide process for improved shallow junction formation in support region |
| US20060175670A1 (en) * | 2005-02-10 | 2006-08-10 | Nec Compound Semiconductor Device, Ltd. | Field effect transistor and method of manufacturing a field effect transistor |
| JP2011243657A (ja) * | 2010-05-14 | 2011-12-01 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
-
1975
- 1975-12-04 DE DE19752554638 patent/DE2554638A1/de active Pending
-
1976
- 1976-11-24 GB GB44340/76A patent/GB1551290A/en not_active Expired
- 1976-11-25 FR FR7635519A patent/FR2334199A1/fr active Granted
- 1976-11-29 NL NL7613275A patent/NL7613275A/xx unknown
- 1976-12-03 JP JP51145509A patent/JPS5269576A/ja active Pending
- 1976-12-03 BE BE172972A patent/BE849065A/fr unknown
- 1976-12-03 IT IT30064/76A patent/IT1065165B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2334199B1 (fr) | 1979-04-06 |
| FR2334199A1 (fr) | 1977-07-01 |
| DE2554638A1 (de) | 1977-06-16 |
| JPS5269576A (en) | 1977-06-09 |
| IT1065165B (it) | 1985-02-25 |
| NL7613275A (nl) | 1977-06-07 |
| GB1551290A (en) | 1979-08-30 |
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