BE873652A - Circuit integre a semi-conducteur - Google Patents

Circuit integre a semi-conducteur

Info

Publication number
BE873652A
BE873652A BE193036A BE193036A BE873652A BE 873652 A BE873652 A BE 873652A BE 193036 A BE193036 A BE 193036A BE 193036 A BE193036 A BE 193036A BE 873652 A BE873652 A BE 873652A
Authority
BE
Belgium
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Application number
BE193036A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE873652A publication Critical patent/BE873652A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
BE193036A 1978-01-25 1979-01-23 Circuit integre a semi-conducteur BE873652A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87217378A 1978-01-25 1978-01-25

Publications (1)

Publication Number Publication Date
BE873652A true BE873652A (fr) 1979-05-16

Family

ID=25358994

Family Applications (1)

Application Number Title Priority Date Filing Date
BE193036A BE873652A (fr) 1978-01-25 1979-01-23 Circuit integre a semi-conducteur

Country Status (8)

Country Link
JP (1) JPS54121083A (fr)
BE (1) BE873652A (fr)
DE (1) DE2902494A1 (fr)
FR (1) FR2415878A1 (fr)
GB (1) GB2016208A (fr)
IT (1) IT7967158A0 (fr)
NL (1) NL7900530A (fr)
SE (1) SE7900379L (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430092A1 (fr) * 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS55140260A (en) 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5864059A (ja) * 1981-10-14 1983-04-16 Hitachi Ltd 高耐圧抵抗素子
GB2232530B (en) * 1988-11-22 1993-09-22 Seiko Epson Corp A high precision semiconductor resistor device
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US6458669B1 (en) * 2000-08-30 2002-10-01 Agere Systems Guardian Corp. Method of manufacturing an integrated circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
FR2351505A1 (fr) * 1976-05-13 1977-12-09 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Also Published As

Publication number Publication date
NL7900530A (nl) 1979-07-27
JPS54121083A (en) 1979-09-19
IT7967158A0 (it) 1979-01-24
SE7900379L (sv) 1979-07-26
GB2016208A (en) 1979-09-19
DE2902494A1 (de) 1979-07-26
FR2415878A1 (fr) 1979-08-24

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