JPS54121083A - Semiconductor ic - Google Patents

Semiconductor ic

Info

Publication number
JPS54121083A
JPS54121083A JP660579A JP660579A JPS54121083A JP S54121083 A JPS54121083 A JP S54121083A JP 660579 A JP660579 A JP 660579A JP 660579 A JP660579 A JP 660579A JP S54121083 A JPS54121083 A JP S54121083A
Authority
JP
Japan
Prior art keywords
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP660579A
Other languages
English (en)
Japanese (ja)
Inventor
Robaato Gaadonaa Kaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS54121083A publication Critical patent/JPS54121083A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/206—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of combinations of capacitors and resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP660579A 1978-01-25 1979-01-25 Semiconductor ic Pending JPS54121083A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87217378A 1978-01-25 1978-01-25

Publications (1)

Publication Number Publication Date
JPS54121083A true JPS54121083A (en) 1979-09-19

Family

ID=25358994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP660579A Pending JPS54121083A (en) 1978-01-25 1979-01-25 Semiconductor ic

Country Status (8)

Country Link
JP (1) JPS54121083A (fr)
BE (1) BE873652A (fr)
DE (1) DE2902494A1 (fr)
FR (1) FR2415878A1 (fr)
GB (1) GB2016208A (fr)
IT (1) IT7967158A0 (fr)
NL (1) NL7900530A (fr)
SE (1) SE7900379L (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
KR100870256B1 (ko) * 2000-08-30 2008-11-25 에이저 시스템즈 가디언 코포레이션 강화된 라우팅 영역을 갖는 필드 플레이트된 저항기

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430092A1 (fr) * 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues
JPS55140260A (en) 1979-04-16 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5864059A (ja) * 1981-10-14 1983-04-16 Hitachi Ltd 高耐圧抵抗素子
GB2262187A (en) * 1988-11-22 1993-06-09 Seiko Epson Corp Semiconductor resistors
US6458669B1 (en) * 2000-08-30 2002-10-01 Agere Systems Guardian Corp. Method of manufacturing an integrated circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
FR2351505A1 (fr) * 1976-05-13 1977-12-09 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
KR100870256B1 (ko) * 2000-08-30 2008-11-25 에이저 시스템즈 가디언 코포레이션 강화된 라우팅 영역을 갖는 필드 플레이트된 저항기

Also Published As

Publication number Publication date
DE2902494A1 (de) 1979-07-26
BE873652A (fr) 1979-05-16
FR2415878A1 (fr) 1979-08-24
NL7900530A (nl) 1979-07-27
SE7900379L (sv) 1979-07-26
GB2016208A (en) 1979-09-19
IT7967158A0 (it) 1979-01-24

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