BE895410A - Dispositifs de commutation a diode commandee - Google Patents
Dispositifs de commutation a diode commandeeInfo
- Publication number
- BE895410A BE895410A BE0/209769A BE209769A BE895410A BE 895410 A BE895410 A BE 895410A BE 0/209769 A BE0/209769 A BE 0/209769A BE 209769 A BE209769 A BE 209769A BE 895410 A BE895410 A BE 895410A
- Authority
- BE
- Belgium
- Prior art keywords
- switching devices
- controlled diode
- diode
- controlled
- switching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/021—Manufacture or treatment of air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/20—Air gaps
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/333,700 US4467344A (en) | 1981-12-23 | 1981-12-23 | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE895410A true BE895410A (fr) | 1983-04-15 |
Family
ID=23303904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE0/209769A BE895410A (fr) | 1981-12-23 | 1982-12-20 | Dispositifs de commutation a diode commandee |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4467344A (fr) |
| JP (1) | JPS58114466A (fr) |
| BE (1) | BE895410A (fr) |
| CA (1) | CA1190327A (fr) |
| DE (1) | DE3247221A1 (fr) |
| FR (1) | FR2518814B1 (fr) |
| GB (1) | GB2112206B (fr) |
| SE (1) | SE450069B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4573065A (en) * | 1982-12-10 | 1986-02-25 | At&T Bell Laboratories | Radial high voltage switch structure |
| US4804866A (en) * | 1986-03-24 | 1989-02-14 | Matsushita Electric Works, Ltd. | Solid state relay |
| FR2677821B1 (fr) * | 1991-06-11 | 1993-10-08 | Sgs Thomson Microelectronics Sa | Composant de protection bidirectionnel. |
| US6696707B2 (en) | 1999-04-23 | 2004-02-24 | Ccp. Clare Corporation | High voltage integrated switching devices on a bonded and trenched silicon substrate |
| US6566223B1 (en) | 2000-08-15 | 2003-05-20 | C. P. Clare Corporation | High voltage integrated switching devices on a bonded and trenched silicon substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6040190B2 (ja) * | 1976-07-21 | 1985-09-10 | 日本インタ−ナシヨナル整流器株式会社 | 半導体制御整流素子 |
| US4130827A (en) * | 1976-12-03 | 1978-12-19 | Bell Telephone Laboratories, Incorporated | Integrated circuit switching network using low substrate leakage current thyristor construction |
| GB2049283B (en) * | 1978-12-20 | 1983-07-27 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
| CA1145057A (fr) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | Commutateur a semiconducteur pour hautes tensions |
-
1981
- 1981-12-23 US US06/333,700 patent/US4467344A/en not_active Expired - Fee Related
-
1982
- 1982-12-09 GB GB08235107A patent/GB2112206B/en not_active Expired
- 1982-12-13 CA CA000417531A patent/CA1190327A/fr not_active Expired
- 1982-12-14 SE SE8207154A patent/SE450069B/sv not_active IP Right Cessation
- 1982-12-15 FR FR8221036A patent/FR2518814B1/fr not_active Expired
- 1982-12-20 BE BE0/209769A patent/BE895410A/fr not_active IP Right Cessation
- 1982-12-21 JP JP57223109A patent/JPS58114466A/ja active Pending
- 1982-12-21 DE DE19823247221 patent/DE3247221A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| SE8207154L (sv) | 1983-06-24 |
| SE8207154D0 (sv) | 1982-12-14 |
| FR2518814A1 (fr) | 1983-06-24 |
| CA1190327A (fr) | 1985-07-09 |
| GB2112206B (en) | 1985-10-23 |
| DE3247221A1 (de) | 1983-06-30 |
| JPS58114466A (ja) | 1983-07-07 |
| SE450069B (sv) | 1987-06-01 |
| US4467344A (en) | 1984-08-21 |
| GB2112206A (en) | 1983-07-13 |
| FR2518814B1 (fr) | 1987-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RE | Patent lapsed |
Owner name: WESTERN ELECTRIC CY INC. Effective date: 19911231 |