SE450069B - Grindstyrda diodstromstellaranordningar - Google Patents

Grindstyrda diodstromstellaranordningar

Info

Publication number
SE450069B
SE450069B SE8207154A SE8207154A SE450069B SE 450069 B SE450069 B SE 450069B SE 8207154 A SE8207154 A SE 8207154A SE 8207154 A SE8207154 A SE 8207154A SE 450069 B SE450069 B SE 450069B
Authority
SE
Sweden
Prior art keywords
region
gate
controlled diode
semiconductor
diode switch
Prior art date
Application number
SE8207154A
Other languages
English (en)
Swedish (sv)
Other versions
SE8207154D0 (sv
SE8207154L (sv
Inventor
G-K Chang
A R Hartman
H T Weston
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE8207154D0 publication Critical patent/SE8207154D0/xx
Publication of SE8207154L publication Critical patent/SE8207154L/
Publication of SE450069B publication Critical patent/SE450069B/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
SE8207154A 1981-12-23 1982-12-14 Grindstyrda diodstromstellaranordningar SE450069B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/333,700 US4467344A (en) 1981-12-23 1981-12-23 Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Publications (3)

Publication Number Publication Date
SE8207154D0 SE8207154D0 (sv) 1982-12-14
SE8207154L SE8207154L (sv) 1983-06-24
SE450069B true SE450069B (sv) 1987-06-01

Family

ID=23303904

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8207154A SE450069B (sv) 1981-12-23 1982-12-14 Grindstyrda diodstromstellaranordningar

Country Status (8)

Country Link
US (1) US4467344A (fr)
JP (1) JPS58114466A (fr)
BE (1) BE895410A (fr)
CA (1) CA1190327A (fr)
DE (1) DE3247221A1 (fr)
FR (1) FR2518814B1 (fr)
GB (1) GB2112206B (fr)
SE (1) SE450069B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure
US4804866A (en) * 1986-03-24 1989-02-14 Matsushita Electric Works, Ltd. Solid state relay
FR2677821B1 (fr) * 1991-06-11 1993-10-08 Sgs Thomson Microelectronics Sa Composant de protection bidirectionnel.
US6696707B2 (en) 1999-04-23 2004-02-24 Ccp. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate
US6566223B1 (en) 2000-08-15 2003-05-20 C. P. Clare Corporation High voltage integrated switching devices on a bonded and trenched silicon substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6040190B2 (ja) * 1976-07-21 1985-09-10 日本インタ−ナシヨナル整流器株式会社 半導体制御整流素子
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
WO1980001337A1 (fr) * 1978-12-20 1980-06-26 Western Electric Co Commutateur a semi-conducteur de haute tension a isolation dielectrique
CA1145057A (fr) * 1979-12-28 1983-04-19 Adrian R. Hartman Commutateur a semiconducteur pour hautes tensions

Also Published As

Publication number Publication date
JPS58114466A (ja) 1983-07-07
BE895410A (fr) 1983-04-15
US4467344A (en) 1984-08-21
GB2112206B (en) 1985-10-23
FR2518814B1 (fr) 1987-01-09
GB2112206A (en) 1983-07-13
CA1190327A (fr) 1985-07-09
SE8207154D0 (sv) 1982-12-14
FR2518814A1 (fr) 1983-06-24
SE8207154L (sv) 1983-06-24
DE3247221A1 (de) 1983-06-30

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