BE904841A - Commutateur lineaire bidirectionnel. - Google Patents

Commutateur lineaire bidirectionnel.

Info

Publication number
BE904841A
BE904841A BE0/216718A BE216718A BE904841A BE 904841 A BE904841 A BE 904841A BE 0/216718 A BE0/216718 A BE 0/216718A BE 216718 A BE216718 A BE 216718A BE 904841 A BE904841 A BE 904841A
Authority
BE
Belgium
Prior art keywords
bases
linear switch
bidirectional linear
bidirectional
transmitters
Prior art date
Application number
BE0/216718A
Other languages
English (en)
Inventor
S Sugayama
T Kariya
T Shimura
S Tomita
Original Assignee
Hitachi Ltd
Hitachi Haramachi Semi Conduct
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Semi Conduct filed Critical Hitachi Ltd
Publication of BE904841A publication Critical patent/BE904841A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)

Abstract

Dans un commutateur linéaire bidirectionnel où on utilise deux transistors MOS dont les sources sont mutuellement connectées, les portes et les bases des transistors sont mutuellement connectées et un signal de commande est appliqué aux portes, un potentiel d'une polarité telle que les bases soient polarisées de manière inverse par rapport aux émetteurs étant appliqué entre les bases et les émetteurs, la linéarité du commutateur bidirectionnel étant ainsi améliorée.
BE0/216718A 1985-05-31 1986-05-29 Commutateur lineaire bidirectionnel. BE904841A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60116449A JPH0612873B2 (ja) 1985-05-31 1985-05-31 両極性リニアスイツチ

Publications (1)

Publication Number Publication Date
BE904841A true BE904841A (fr) 1986-09-15

Family

ID=14687390

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/216718A BE904841A (fr) 1985-05-31 1986-05-29 Commutateur lineaire bidirectionnel.

Country Status (3)

Country Link
US (1) US4728825A (fr)
JP (1) JPH0612873B2 (fr)
BE (1) BE904841A (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057149A (ja) * 1991-06-27 1993-01-14 Fujitsu Ltd 出力回路
JPH08139579A (ja) * 1994-11-15 1996-05-31 Mitsubishi Electric Corp 電流源及び半導体集積回路装置
US5689209A (en) * 1994-12-30 1997-11-18 Siliconix Incorporated Low-side bidirectional battery disconnect switch
US5818099A (en) * 1996-10-03 1998-10-06 International Business Machines Corporation MOS high frequency switch circuit using a variable well bias
JP2001186007A (ja) * 1999-12-24 2001-07-06 Sharp Corp 金属酸化膜半導体トランジスタ回路およびそれを用いた半導体集積回路
US6683393B2 (en) 2001-12-31 2004-01-27 James M. Lewis MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7102253B2 (en) * 2001-12-31 2006-09-05 Lewis James M MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7230354B2 (en) * 2001-12-31 2007-06-12 Lewis James M Driver system for MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7183672B2 (en) * 2001-12-31 2007-02-27 Lewis James M MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7439636B2 (en) * 2001-12-31 2008-10-21 Lewis James M Driver system for MOSFET based, high voltage electronic relays for AC power switching and inductive loads
TWI249682B (en) * 2004-05-19 2006-02-21 Quanta Comp Inc Blade server system
JP2006147700A (ja) * 2004-11-17 2006-06-08 Sanyo Electric Co Ltd 半導体装置
US7928607B2 (en) * 2007-03-29 2011-04-19 Lamar Technologies Llc Aircraft power system and apparatus for supplying power to an aircraft electrical system
US20090184746A1 (en) * 2008-01-22 2009-07-23 Microsemi Corporation Low Voltage Drop Unidirectional Electronic Valve
CN103560652B (zh) * 2009-01-19 2016-08-17 大金工业株式会社 双向开关电路
US8169252B2 (en) * 2009-07-09 2012-05-01 Microsemi Corporation Low voltage drop closed loop unidirectional electronic valve
DE102012010083B4 (de) 2011-05-23 2023-04-27 Microsemi Corp. Photovoltaische Sicherheitsabschaltungsvorrichtung
JP5842720B2 (ja) * 2012-04-19 2016-01-13 株式会社ソシオネクスト 出力回路
CN110518900A (zh) * 2019-09-19 2019-11-29 绵阳市维博电子有限责任公司 一种超大电流电子开关电路
JP7611481B2 (ja) * 2019-10-31 2025-01-10 パナソニックＩｐマネジメント株式会社 スイッチ回路および撮像装置
US11594626B2 (en) * 2021-02-05 2023-02-28 Globalfoundries U.S. Inc. Bidirectional switches with active substrate biasing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323260A (en) * 1976-08-17 1978-03-03 Torio Kk Mosfet transistor switch circuit
JPS5585135A (en) * 1978-12-21 1980-06-26 Sony Corp Mos-fet switching circuit
JPS601781B2 (ja) * 1979-04-26 1985-01-17 日本電気株式会社 双方向スイツチ
US4438356A (en) * 1982-03-24 1984-03-20 International Rectifier Corporation Solid state relay circuit employing MOSFET power switching devices
US4564770A (en) * 1983-03-29 1986-01-14 Rca Corporation Solid state relay with fast turnoff

Also Published As

Publication number Publication date
JPS61276424A (ja) 1986-12-06
US4728825A (en) 1988-03-01
JPH0612873B2 (ja) 1994-02-16

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Legal Events

Date Code Title Description
RE Patent lapsed

Effective date: 20030531