BR0011501A - Processo e dispositivo para desligamento de uma configuração de circuito cascode com chaves semicondutoras comandadas por tensão - Google Patents

Processo e dispositivo para desligamento de uma configuração de circuito cascode com chaves semicondutoras comandadas por tensão

Info

Publication number
BR0011501A
BR0011501A BR0011501-0A BR0011501A BR0011501A BR 0011501 A BR0011501 A BR 0011501A BR 0011501 A BR0011501 A BR 0011501A BR 0011501 A BR0011501 A BR 0011501A
Authority
BR
Brazil
Prior art keywords
disconnecting
voltage
circuit configuration
cascode circuit
semiconductor switch
Prior art date
Application number
BR0011501-0A
Other languages
English (en)
Inventor
Benno Weis
Eric Baudelot
Manfred Bruckmann
Heinz Mitlehner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BR0011501A publication Critical patent/BR0011501A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)

Abstract

Patente de Invenção: "PROCESSO E DISPOSITIVO PARA DESLIGAMENTO DE UMA CONFIGURAçãO DE CIRCUITO CASCODE COM CHAVES SEMICONDUTORAS COMANDADAS POR TENSãO". A presente invenção refere-se a um processo e um dispositivo para desligamento de uma conexão cascode (2), composta de uma conexão em série de uma chave semicondutora (4,6) respectiva que desliga em nível baixo e em nível alto. De acordo com a invenção, na ocorrência de uma instrução de desligamento (U~ at~), a tensão de porta (U~ gs~) da chave semicondutora (4) que desliga em nível baixo é modulada de forma que sua tensão de dreno (U~ D'S~) é mantida constante na região ativa da chave semicondutora (4) que desliga em nível baixo. Desta maneira, se detecta uma sobretensão inadmissível no potencial de nível alto da conexão cascode para o potencial de nível baixo e se delimita de forma ativa.
BR0011501-0A 1999-06-11 2000-05-29 Processo e dispositivo para desligamento de uma configuração de circuito cascode com chaves semicondutoras comandadas por tensão BR0011501A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19926715A DE19926715C1 (de) 1999-06-11 1999-06-11 Verfahren und Vorrichtung zum Abschalten einer Kaskodenschaltung mit spannungsgesteuerten Halbleiterschaltern
PCT/DE2000/001739 WO2000077934A1 (de) 1999-06-11 2000-05-29 Verfahren und vorrichtung zum abschalten einer kaskodenschaltung mit spannungsgesteuerten halbleiterschaltungen

Publications (1)

Publication Number Publication Date
BR0011501A true BR0011501A (pt) 2002-02-26

Family

ID=7910957

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0011501-0A BR0011501A (pt) 1999-06-11 2000-05-29 Processo e dispositivo para desligamento de uma configuração de circuito cascode com chaves semicondutoras comandadas por tensão

Country Status (6)

Country Link
US (1) US6614281B1 (pt)
EP (1) EP1186103B1 (pt)
BR (1) BR0011501A (pt)
CA (1) CA2376750A1 (pt)
DE (2) DE19926715C1 (pt)
WO (1) WO2000077934A1 (pt)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT411945B (de) * 2001-07-16 2004-07-26 Siemens Ag Oesterreich Schalteinrichtung
US6855981B2 (en) * 2001-08-29 2005-02-15 Denso Corporation Silicon carbide power device having protective diode
DE102004046823B3 (de) * 2004-09-27 2005-12-08 Siemens Ag Elektronisches Schaltgerät, insbesondere Leistungsschalter, und zugehörige Betriebsweise
WO2007042850A1 (en) 2005-10-12 2007-04-19 Acco Insulated gate field-effet transistor having a dummy gate
US20070170897A1 (en) * 2006-01-26 2007-07-26 Advanced Analogic Technologies, Inc. High-Frequency Power MESFET Buck Switching Power Supply
US7859234B2 (en) * 2006-04-07 2010-12-28 System General Corp. Switch circuit to control on/off of a high voltage source
US7855866B2 (en) * 2006-12-19 2010-12-21 Akros Silicon, Inc. Network interface with transient protection apparatus for multiple ground planes
JP5317413B2 (ja) * 2007-02-06 2013-10-16 株式会社東芝 半導体スイッチおよび当該半導体スイッチを適用した電力変換装置
CN101978506B (zh) * 2008-02-13 2013-01-16 Acco半导体公司 高击穿电压的双栅极半导体器件
US7969243B2 (en) * 2009-04-22 2011-06-28 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US8928410B2 (en) 2008-02-13 2015-01-06 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
FR2949630B1 (fr) * 2009-08-31 2019-04-05 Safran Electrical & Power Module electronique de commande pour transistor jfet
US8228114B1 (en) 2009-09-30 2012-07-24 Arkansas Power Electronics International, Inc. Normally-off D-mode driven direct drive cascode
DE102009046258B3 (de) * 2009-10-30 2011-07-07 Infineon Technologies AG, 85579 Leistungshalbleitermodul und Verfahren zum Betrieb eines Leistungshalbleitermoduls
JP5012930B2 (ja) * 2010-02-15 2012-08-29 株式会社デンソー ハイブリッドパワーデバイス
JP5270713B2 (ja) * 2011-04-19 2013-08-21 シャープ株式会社 スイッチング電源装置
JP5431445B2 (ja) * 2011-12-27 2014-03-05 シャープ株式会社 スイッチング電源回路
US9515649B2 (en) * 2012-03-27 2016-12-06 Sharp Kabushiki Kaisha Cascode circuit
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
EP2662980B1 (en) 2012-05-09 2014-07-16 Nxp B.V. A protection circuit for a cascode switch, and a method of protecting a cascode switch
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US20140055192A1 (en) * 2012-08-24 2014-02-27 Rf Micro Devices, Inc. Saturation current limiting circuit topology for power transistors
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
EP2736170B1 (en) * 2012-11-23 2015-06-17 Nxp B.V. Cascoded semiconductor devices
US9230957B2 (en) * 2013-03-11 2016-01-05 Alpha And Omega Semiconductor Incorporated Integrated snubber in a single poly MOSFET
US9007117B2 (en) * 2013-08-02 2015-04-14 Infineon Technologies Dresden Gmbh Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor
WO2015114728A1 (ja) * 2014-01-28 2015-08-06 株式会社日立製作所 パワーモジュール、電力変換装置、および鉄道車両
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10218350B2 (en) 2016-07-20 2019-02-26 Semiconductor Components Industries, Llc Circuit with transistors having coupled gates
US9947654B2 (en) 2016-09-08 2018-04-17 Semiconductor Components Industries, Llc Electronic device including a transistor and a field electrode
US10033298B1 (en) * 2017-01-20 2018-07-24 General Electric Company Automatic short circuit protection switching device systems and methods
JP6769458B2 (ja) 2017-07-26 2020-10-14 株式会社デンソー 半導体装置
JP7024688B2 (ja) 2018-11-07 2022-02-24 株式会社デンソー 半導体装置
US20240162898A1 (en) * 2022-11-14 2024-05-16 Monolithic Power Systems, Inc. Power switch device with cascode structure and the forming method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228367A (en) * 1978-08-07 1980-10-14 Precision Monolithics, Inc. High speed integrated switching circuit for analog signals
US4480201A (en) 1982-06-21 1984-10-30 Eaton Corporation Dual mode power transistor
DE4325899C2 (de) * 1993-08-02 1995-11-16 Siemens Ag MOS-Schaltstufe
DE19610135C1 (de) * 1996-03-14 1997-06-19 Siemens Ag Elektronische Einrichtung, insbesondere zum Schalten elektrischer Ströme, für hohe Sperrspannungen und mit geringen Durchlaßverlusten
DE19742019C2 (de) * 1997-09-24 2002-04-18 Alcatel Sa Verfahren und Schaltungsanordnung zur Begrenzung von Schaltüberspannungen an Leistungshalbleiterschaltern

Also Published As

Publication number Publication date
WO2000077934A1 (de) 2000-12-21
CA2376750A1 (en) 2000-12-21
EP1186103B1 (de) 2004-02-04
EP1186103A1 (de) 2002-03-13
DE50005212D1 (de) 2004-03-11
DE19926715C1 (de) 2001-01-18
US6614281B1 (en) 2003-09-02

Similar Documents

Publication Publication Date Title
BR0011501A (pt) Processo e dispositivo para desligamento de uma configuração de circuito cascode com chaves semicondutoras comandadas por tensão
CN108718193B (zh) 一种功率半导体元件的驱动保护电路及其控制方法
ES2163409T3 (es) Sistema de distribucion de energia desprovisto de contactos.
EP1291926A3 (en) High-voltage semiconductor devices
EP1229656A3 (en) Low power, charge injection compensated charge pump
WO2002069408A3 (en) Soi ldmos transistor having a field plate and method of making the same
ATE515802T1 (de) Lateraler leistungs-mosfet
WO2007089639A3 (en) High voltage gate driver ic (hvic) with internal charge pumping voltage source
BR9906397A (pt) Circuito topológico de comutação moderada.
EP0918389A3 (en) Low loss reverse battery protection
KR960005986A (ko) 반도체 집적회로장치
ATE434267T1 (de) INTEGRIERTER SCHALTKREIS MIT ENGGEKOPPELTEM HOCHSPANNUNGSAUSGANG UND ßOFFLINEß TRANSISTORPAAR
WO2013142238A1 (en) Bi-directional switch using series connected n-type mos devices in parallel with series connected p-type mos devices
ATE150226T1 (de) Schaltungsanordnung zur begrenzung des einschaltstromes und der ueberspannung eines elektronischen vorschaltgerätes
KR950030280A (ko) 기판의 감도를 감소시키기 위해 이온 주입에 의해 카운터도핑을 한 mos 채널 소자
BR9809947A (pt) Dispositivo e processo para o comando de pelo menos um elemento de ajuste capacitivo
BR9909652A (pt) Dispositivo de circuito para a redução da corrente de fuga
BR0002689A (pt) Módulo eletromagnético de comutação multipolar
GB2355121A (en) A stress-follower circuit configuration
BR0005079A (pt) Circuito de controle eletrônico para suprimento de energia e método para fornecer energia a um dispositivo de carga
ATE228721T1 (de) Hochleistungsanzeigepixel für elektronische anzeigeeinrichtungen
JP2010074874A (ja) 突入電流抑制回路
EP1231528A3 (en) Circuit configuration for the generation of a reference voltage
KR960005994A (ko) 보호구조를 가지는 집적 파워 반도체 장치
ES2110674T3 (es) Interruptor de proteccion de corrientes de fallo con circuito de acumulacion de energia.

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 9A, 10A E 11A ANUIDADE(S).

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2112 DE 28/06/2011.