BR0016331B1 - mÉtodo para produÇço de pà de tÂntalo contendo nitrogÊnio. - Google Patents

mÉtodo para produÇço de pà de tÂntalo contendo nitrogÊnio.

Info

Publication number
BR0016331B1
BR0016331B1 BRPI0016331-7A BR0016331A BR0016331B1 BR 0016331 B1 BR0016331 B1 BR 0016331B1 BR 0016331 A BR0016331 A BR 0016331A BR 0016331 B1 BR0016331 B1 BR 0016331B1
Authority
BR
Brazil
Prior art keywords
nitrogen
metallic powder
metal
powder
niobium
Prior art date
Application number
BRPI0016331-7A
Other languages
English (en)
Other versions
BR0016331A (pt
Inventor
Yukio Oda
Tomoo Izumi
Yoshikazu Noguchi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18555954&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BR0016331(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of BR0016331A publication Critical patent/BR0016331A/pt
Publication of BR0016331B1 publication Critical patent/BR0016331B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Conductive Materials (AREA)
BRPI0016331-7A 2000-02-08 2000-09-11 mÉtodo para produÇço de pà de tÂntalo contendo nitrogÊnio. BR0016331B1 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000031029A JP4049964B2 (ja) 2000-02-08 2000-02-08 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサー
PCT/JP2000/006183 WO2001059166A1 (en) 2000-02-08 2000-09-11 Production of nitrogen-containing tantalum or niobium powder and solid electrolytic capacitor

Publications (2)

Publication Number Publication Date
BR0016331A BR0016331A (pt) 2002-12-24
BR0016331B1 true BR0016331B1 (pt) 2008-11-18

Family

ID=18555954

Family Applications (2)

Application Number Title Priority Date Filing Date
BRPI0017498-0A BR0017498B1 (pt) 2000-02-08 2000-09-11 Pó de tântalo contendo nitrogênio, corpo sinterizado poroso e capacitor eletrolítico sólido
BRPI0016331-7A BR0016331B1 (pt) 2000-02-08 2000-09-11 mÉtodo para produÇço de pà de tÂntalo contendo nitrogÊnio.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BRPI0017498-0A BR0017498B1 (pt) 2000-02-08 2000-09-11 Pó de tântalo contendo nitrogênio, corpo sinterizado poroso e capacitor eletrolítico sólido

Country Status (13)

Country Link
EP (1) EP1255872B1 (pt)
JP (1) JP4049964B2 (pt)
KR (1) KR20020092362A (pt)
CN (1) CN1180101C (pt)
AT (1) ATE245712T1 (pt)
AU (1) AU2000268772A1 (pt)
BR (2) BR0017498B1 (pt)
CZ (1) CZ301396B6 (pt)
DE (1) DE60004108T2 (pt)
IL (1) IL150851A (pt)
PL (1) PL357016A1 (pt)
PT (1) PT1255872E (pt)
WO (1) WO2001059166A1 (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4187953B2 (ja) 2001-08-15 2008-11-26 キャボットスーパーメタル株式会社 窒素含有金属粉末の製造方法
EP1434243B1 (en) * 2001-10-02 2010-01-27 Showa Denko K.K. Niobium powder, sintered compact thereof, chemically modified product thereof and capacitor using them
BR0204587A (pt) * 2002-11-04 2004-06-29 Cbmm Sa Processo de produção de pó de nióbio e/ou de tântalo de elevada área superficial
US7157073B2 (en) 2003-05-02 2007-01-02 Reading Alloys, Inc. Production of high-purity niobium monoxide and capacitor production therefrom
WO2005044488A1 (ja) 2003-11-05 2005-05-19 Ishihara Chemical Co., Ltd. 純金属・合金超微粉末の製造方法
CN100450673C (zh) 2004-04-15 2009-01-14 杰富意矿物股份有限公司 钽粉末及使用有它的固体电解电容器
US7431751B2 (en) * 2004-09-29 2008-10-07 H.C. Starck Inc. Magnesium removal from magnesium reduced metal powders
JP4042995B2 (ja) * 2004-10-06 2008-02-06 昭和電工株式会社 ニオブ粉、ニオブ造粒物、ニオブ焼結体及びコンデンサ並びにそれらの製造方法
US20060269436A1 (en) * 2005-05-31 2006-11-30 Cabot Corporation Process for heat treating metal powder and products made from the same
JP4879040B2 (ja) 2006-03-31 2012-02-15 三洋電機株式会社 固体電解コンデンサ
WO2007130483A2 (en) * 2006-05-05 2007-11-15 Cabot Corporation Tantalum powder with smooth surface and methods of manufacturing same
JP2009275289A (ja) * 2009-07-10 2009-11-26 Cabot Supermetal Kk 窒素含有金属粉末の製造方法
JP5680866B2 (ja) * 2010-02-24 2015-03-04 グローバルアドバンストメタルジャパン株式会社 窒素含有金属粉末の製造方法
US9764388B2 (en) * 2013-12-10 2017-09-19 Ningxia Orient Tantalum Industry Co., Ltd. Method for preparing tantalum powder of capacitor grade with high nitrogen content, tantalum powder of capacitor grade prepared thereby, and anode and capacitor prepared from tantalum powder
JP5898297B2 (ja) * 2014-11-20 2016-04-06 グローバルアドバンストメタルジャパン株式会社 窒素含有金属粉末の製造方法
EP3486338B1 (en) * 2016-07-13 2023-06-21 Ningxia Orient Tantalum Industry Co., Ltd. Flaky tantalum powder and method for preparing the same
US20180144874A1 (en) 2016-10-21 2018-05-24 Global Advanced Metals, Usa, Inc. Tantalum Powder, Anode, And Capacitor Including Same, And Manufacturing Methods Thereof
CN111017889A (zh) * 2019-11-20 2020-04-17 中色（宁夏）东方集团有限公司 一种氮化铌的制备方法
JP7752359B2 (ja) * 2020-08-27 2025-10-10 パナソニックＩｐマネジメント株式会社 電解コンデンサ用電極箔、電解コンデンサ、電解コンデンサ用電極箔の製造方法および電解コンデンサの製造方法
WO2022066722A1 (en) * 2020-09-23 2022-03-31 Avx Corporation Solid electrolytic capacitor containing a deoxidized anode
CN114192791B (zh) * 2021-12-15 2023-10-24 宁夏东方钽业股份有限公司 采用碱土金属还原氧化钽生产电容器用钽粉的方法
CN117444193A (zh) * 2023-11-24 2024-01-26 宁夏东方钽业股份有限公司 一种钽粉及钽粉的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684399A (en) * 1986-03-04 1987-08-04 Cabot Corporation Tantalum powder process
EP0528974B1 (en) * 1990-05-17 1997-07-23 Cabot Corporation Method of producing high surface area low metal impurity tantalum powder
US5448447A (en) * 1993-04-26 1995-09-05 Cabot Corporation Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
DE69516556T2 (de) * 1994-01-26 2000-09-07 H.C. Starck, Inc. Verfahren zum Nitrieren von Tantalpulver
BR9807239A (pt) 1997-02-19 2000-04-25 Starck H C Gmbh Co Kg Pós de tântalo, processos para a sua preparação, bem como anodos de sinterização preparados a partir deles

Also Published As

Publication number Publication date
ATE245712T1 (de) 2003-08-15
DE60004108D1 (de) 2003-08-28
CN1433485A (zh) 2003-07-30
EP1255872B1 (en) 2003-07-23
BR0016331A (pt) 2002-12-24
JP2001223141A (ja) 2001-08-17
PT1255872E (pt) 2004-01-30
DE60004108T2 (de) 2004-06-03
AU2000268772A1 (en) 2001-08-20
IL150851A (en) 2009-09-22
WO2001059166A1 (en) 2001-08-16
JP4049964B2 (ja) 2008-02-20
CN1180101C (zh) 2004-12-15
CZ20022680A3 (cs) 2003-04-16
CZ301396B6 (cs) 2010-02-17
KR20020092362A (ko) 2002-12-11
EP1255872A1 (en) 2002-11-13
PL357016A1 (en) 2004-07-12
BR0017498B1 (pt) 2014-09-30

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Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 11/09/2000, OBSERVADAS AS CONDICOES LEGAIS.

B21A Patent or certificate of addition expired [chapter 21.1 patent gazette]

Free format text: PATENTE EXTINTA EM 11.09.2020