BR0100190A - Método de fabricação de um ressonador à base de óxido de zinco - Google Patents

Método de fabricação de um ressonador à base de óxido de zinco

Info

Publication number
BR0100190A
BR0100190A BR0100190-6A BR0100190A BR0100190A BR 0100190 A BR0100190 A BR 0100190A BR 0100190 A BR0100190 A BR 0100190A BR 0100190 A BR0100190 A BR 0100190A
Authority
BR
Brazil
Prior art keywords
manufacturing
zinc oxide
oxide based
layer
based resonator
Prior art date
Application number
BR0100190-6A
Other languages
English (en)
Inventor
Glen Robert Kowach
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of BR0100190A publication Critical patent/BR0100190A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02094—Means for compensation or elimination of undesirable effects of adherence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<B>MéTODO DE FABRICAçãO DE UM RESSONADOR à BASE DE óXIDO DE ZINCO<D> Um método de fabricação de um ressonador é revelado. O método compreende inicialmente a etapa de fornecer uma base de substrato tendo uma camada(s) dielétrica(s). Depois disso, é formada uma camada adesiva na(s) camada(s) dielétrica(s), e uma película promotora de nucleação é formada sobre a camada adesiva. Uma camada de óxido de zinco é subsequêntemente formada sobre a película promotora de nucleação, e uma camada condutoras superior é formada
BR0100190-6A 2000-02-10 2001-01-29 Método de fabricação de um ressonador à base de óxido de zinco BR0100190A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50140300A 2000-02-10 2000-02-10

Publications (1)

Publication Number Publication Date
BR0100190A true BR0100190A (pt) 2001-10-09

Family

ID=23993411

Family Applications (1)

Application Number Title Priority Date Filing Date
BR0100190-6A BR0100190A (pt) 2000-02-10 2001-01-29 Método de fabricação de um ressonador à base de óxido de zinco

Country Status (7)

Country Link
EP (1) EP1124328A1 (pt)
JP (1) JP2001274650A (pt)
KR (1) KR20010082097A (pt)
CN (1) CN1310517A (pt)
AU (1) AU1830501A (pt)
BR (1) BR0100190A (pt)
CA (1) CA2330200A1 (pt)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10035423C1 (de) * 2000-07-20 2001-11-22 Infineon Technologies Ag Halbleiterbauelement mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen und Verfahren zu dessen Herstellung
JP2004221622A (ja) * 2002-01-08 2004-08-05 Murata Mfg Co Ltd 圧電共振子、圧電フィルタ、デュプレクサ、通信装置および圧電共振子の製造方法
US6906451B2 (en) 2002-01-08 2005-06-14 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator
KR20030064530A (ko) * 2002-01-28 2003-08-02 엘지이노텍 주식회사 박막 용적 공진기
DE10206369B4 (de) * 2002-02-15 2012-12-27 Epcos Ag Elektrodenstruktur mit verbesserter Leistungsverträglichkeit und Verfahren zur Herstellung
US7276994B2 (en) 2002-05-23 2007-10-02 Murata Manufacturing Co., Ltd. Piezoelectric thin-film resonator, piezoelectric filter, and electronic component including the piezoelectric filter
JP2004072715A (ja) 2002-06-11 2004-03-04 Murata Mfg Co Ltd 圧電薄膜共振子、圧電フィルタ、およびそれを有する電子部品
US6828713B2 (en) * 2002-07-30 2004-12-07 Agilent Technologies, Inc Resonator with seed layer
JP4096845B2 (ja) 2002-11-08 2008-06-04 株式会社村田製作所 分波器および通信装置
DE10316716A1 (de) 2003-04-11 2004-10-28 Epcos Ag Bauelement mit einer piezoelektrischen Funktionsschicht
JP2005033379A (ja) 2003-07-09 2005-02-03 Tdk Corp 薄膜バルク波振動子およびその製造方法
JP2005136115A (ja) * 2003-10-30 2005-05-26 Tdk Corp 電子デバイス及びその製造方法
JP4077805B2 (ja) 2004-04-23 2008-04-23 松下電器産業株式会社 共振器の製造方法
JP2006019935A (ja) * 2004-06-30 2006-01-19 Toshiba Corp 薄膜圧電共振器及びその製造方法
DE102004035812A1 (de) * 2004-07-23 2006-03-16 Epcos Ag Mit akustischen Volumenwellen arbeitender Resonator
DE102004047023B4 (de) * 2004-09-28 2006-07-13 Siemens Ag Kondensatorstruktur mit dielektrischer Zwischenschicht, Verfahren zum Herstellen der Kondensatorstruktur und Verwendung der Kondensatorstruktur
JP2006109128A (ja) * 2004-10-06 2006-04-20 Kyocera Kinseki Corp 圧電薄膜素子
JP2006186831A (ja) * 2004-12-28 2006-07-13 Kyocera Kinseki Corp 圧電薄膜デバイス及びその製造方法
JP4693406B2 (ja) * 2004-12-28 2011-06-01 京セラキンセキ株式会社 圧電薄膜デバイス及びその製造方法
JP2006211589A (ja) * 2005-01-31 2006-08-10 Kyocera Kinseki Corp 圧電薄膜デバイス及びその製造方法
JP4691395B2 (ja) 2005-05-30 2011-06-01 株式会社日立メディアエレクトロニクス バルク弾性波共振器、バルク弾性波共振器を用いたフィルタ、それを用いた高周波モジュール、並びにバルク弾性波共振器を用いた発振器
JPWO2007026637A1 (ja) * 2005-08-30 2009-03-26 パナソニック株式会社 圧電共振器及び圧電共振器の製造方法
KR100802109B1 (ko) * 2006-09-12 2008-02-11 삼성전자주식회사 공진기, 그것을 구비하는 장치 및 공진기의 제조 방법
DE102010032811A1 (de) * 2010-07-30 2012-02-02 Epcos Ag Piezoelektrisches Resonatorbauelement und Herstellungsverfahren für ein piezoelektrisches Resonatorbauelement
CN102088274A (zh) * 2010-12-08 2011-06-08 郑州原创电子科技有限公司 一种高基频晶体谐振器的生产方法
JP7425960B2 (ja) * 2019-10-29 2024-02-01 Tdk株式会社 圧電薄膜素子
GB202005318D0 (en) * 2020-04-09 2020-05-27 Spts Technologies Ltd Deposition method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447754A (en) * 1982-09-24 1984-05-08 Texas Instruments Incorporated Broad band surface acoustic wave edge deposited transducer
JP3170819B2 (ja) * 1991-09-24 2001-05-28 住友電気工業株式会社 表面弾性波素子
US5654044A (en) * 1995-08-29 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Diamond film deposition on graphite

Also Published As

Publication number Publication date
CA2330200A1 (en) 2001-08-10
KR20010082097A (ko) 2001-08-29
AU1830501A (en) 2001-08-16
CN1310517A (zh) 2001-08-29
EP1124328A1 (en) 2001-08-16
JP2001274650A (ja) 2001-10-05

Similar Documents

Publication Publication Date Title
BR0100190A (pt) Método de fabricação de um ressonador à base de óxido de zinco
SG106655A1 (en) Thermistor and method of manufacture
DE60220230D1 (de) Herstellungsverfahren eines halbleiterbauelements
EP1207566B8 (en) Anode thin film for lithium secondary battery
AU4547299A (en) Laser etching of electroluminescent lamp electrode structures, and electroluminescent lamps produced thereby
EP1215936A3 (en) Speaker
DE60232619D1 (de) Kondensatorstruktur mit einer Vielzahl von Anschlüssen
TW200507106A (en) Semiconductor device and manufacturing method therefor
EP1235279A3 (en) Semiconductor device using nitride compound and method for fabricating the same
WO2003041185A3 (en) Organic thin film transistor with polymeric interface
AU2002227237A1 (en) Growth of compound semiconductor structures on patterned oxide films
TW359008B (en) Double metal embedding
AU2002359741A1 (en) Oxide layer on a gaas-based semiconductor structure and method of forming the same
ATE512442T1 (de) Speicherzelle zur verwendung in einer integrierten schaltung
EP1901349A3 (en) Semiconductor device and method of fabricating the same
AU2003265921A1 (en) Method of forming and/or modifying a dielectric film on a semiconductor surface
EP1297853B8 (en) Method of forming an oxide film on a metallic member
AU2002237016A1 (en) Method of forming a pre-metal dielectric film on a semiconductor substrate
WO2002029865A3 (en) Method of manufacturing a semiconductor component and semiconductor component thereof
ES2178303T3 (es) Procedimiento para la fabricacion de un dispositivo micromecanico.
EP0949682A3 (en) Ferroelectric memory device with improved ferroelectric capacitor characteristics
DE50209370D1 (de) Elektrisches vielschichtbauelement
DE50014127D1 (de) Piezoaktor mit einer elektrisch leitenden Mehrschichtfolie
AU2002354086A1 (en) Conductive film, manufacturing method thereof, substrate having the same
EA200400579A1 (ru) Инертный анод для электролиза алюминия

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]