BR112016002017A2 - transistor de efeito de campo e método para produzir transistor de efeito de campo - Google Patents

transistor de efeito de campo e método para produzir transistor de efeito de campo

Info

Publication number
BR112016002017A2
BR112016002017A2 BR112016002017A BR112016002017A BR112016002017A2 BR 112016002017 A2 BR112016002017 A2 BR 112016002017A2 BR 112016002017 A BR112016002017 A BR 112016002017A BR 112016002017 A BR112016002017 A BR 112016002017A BR 112016002017 A2 BR112016002017 A2 BR 112016002017A2
Authority
BR
Brazil
Prior art keywords
field effect
effect transistor
electrode
drain electrode
producing
Prior art date
Application number
BR112016002017A
Other languages
English (en)
Inventor
Takada Mikiko
Ueda Naoyuki
Saotome Ryoichi
Arae Sadanori
Matsumoto Shinji
Sone Yuji
Nakamura Yuki
Abe Yukiko
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of BR112016002017A2 publication Critical patent/BR112016002017A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)

Abstract

resumo da patente de invenção para: “transistor de efeito de campo e método para produzir transistor de efeito de campo” fornecer um transistor de efeito de campo, contando: um eletrodo de porta configurado para aplicar voltagem de porta; um eletrodo de fonte e um eletrodo de dreno, os quais são ambos configurados para retirar corrente elétrica; uma camada ativa formada de um semicondutor de óxido do tipo n, fornecido em contato com o eletrodo de fonte e o eletrodo de dreno; e uma camada isolante de porta fornecida entre o eletrodo de porta e a camada ativa, em que função de trabalho do eletrodo de fonte e eletrodo de dreno é 4.90 ev ou maior, e em que uma densidade de portadora de elétrons do semicondutor de óxido do tipo n é 4.0 x 1017 cm-3 ou maior.
BR112016002017A 2013-07-31 2014-07-25 transistor de efeito de campo e método para produzir transistor de efeito de campo BR112016002017A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013159290 2013-07-31
JP2014035430A JP6264090B2 (ja) 2013-07-31 2014-02-26 電界効果型トランジスタ、及び電界効果型トランジスタの製造方法
PCT/JP2014/070289 WO2015016333A1 (en) 2013-07-31 2014-07-25 Field-effect transistor and method for producing field-effect transistor

Publications (1)

Publication Number Publication Date
BR112016002017A2 true BR112016002017A2 (pt) 2017-08-01

Family

ID=52431857

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016002017A BR112016002017A2 (pt) 2013-07-31 2014-07-25 transistor de efeito de campo e método para produzir transistor de efeito de campo

Country Status (10)

Country Link
US (1) US10672914B2 (pt)
EP (1) EP3028298A4 (pt)
JP (1) JP6264090B2 (pt)
KR (1) KR101841855B1 (pt)
CN (2) CN105431930A (pt)
BR (1) BR112016002017A2 (pt)
RU (1) RU2631405C2 (pt)
SG (1) SG11201600543YA (pt)
TW (1) TWI565072B (pt)
WO (1) WO2015016333A1 (pt)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934330A (zh) * 2015-05-08 2015-09-23 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板和显示面板
EP3125296B1 (en) * 2015-07-30 2020-06-10 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
JP2017105013A (ja) 2015-12-08 2017-06-15 株式会社リコー ガスバリア性積層体、半導体装置、表示素子、表示装置、システム
JP6862805B2 (ja) * 2015-12-08 2021-04-21 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP6607013B2 (ja) 2015-12-08 2019-11-20 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
US10600916B2 (en) 2015-12-08 2020-03-24 Ricoh Company, Ltd. Field-effect transistor, display element, image display device, and system
US10170635B2 (en) 2015-12-09 2019-01-01 Ricoh Company, Ltd. Semiconductor device, display device, display apparatus, and system
JP6907512B2 (ja) * 2015-12-15 2021-07-21 株式会社リコー 電界効果型トランジスタの製造方法
JP6665536B2 (ja) 2016-01-12 2020-03-13 株式会社リコー 酸化物半導体
CN108496243A (zh) 2016-02-01 2018-09-04 株式会社理光 场效应晶体管、其制造方法、显示元件、显示设备和系统
JP6701835B2 (ja) 2016-03-11 2020-05-27 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
SG11201807956QA (en) 2016-03-18 2018-10-30 Ricoh Co Ltd Field effect transistor, display element, image display device, and system
SG11201807957SA (en) 2016-03-18 2018-10-30 Ricoh Co Ltd Method for manufacturing a field effect transistor
US10818705B2 (en) 2016-03-18 2020-10-27 Ricoh Company, Ltd. Method for manufacturing a field effect transistor, method for manufacturing a volatile semiconductor memory element, method for manufacturing a non-volatile semiconductor memory element, method for manufacturing a display element, method for manufacturing an image display device, and method for manufacturing a system
CN109478560B (zh) 2016-07-20 2022-03-15 株式会社理光 场效应晶体管及其制作方法，显示元件，图像显示装置和系统
JP2018022879A (ja) 2016-07-20 2018-02-08 株式会社リコー 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム
JP2018157206A (ja) * 2017-03-17 2018-10-04 株式会社リコー 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム
CN107634034A (zh) * 2017-09-15 2018-01-26 惠科股份有限公司 主动阵列开关的制造方法
CN108494275B (zh) * 2017-11-16 2025-04-11 广州擎天实业有限公司 一种高导热大功率同步整流模块
US10688811B2 (en) 2018-02-27 2020-06-23 Ricoh Company, Ltd. Air blower, drying device, liquid discharge apparatus, and treatment-liquid application device
JP6986231B2 (ja) 2018-03-16 2021-12-22 株式会社リコー 塗布装置及び画像形成システム
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
JP7135682B2 (ja) 2018-09-28 2022-09-13 株式会社リコー 給送装置、画像形成装置及び画像形成システム
CN109282924B (zh) * 2018-11-16 2020-12-29 东南大学 一种压力传感器及其制备方法
JP7326795B2 (ja) 2019-03-20 2023-08-16 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
CN111129083A (zh) * 2019-12-11 2020-05-08 深圳市华星光电半导体显示技术有限公司 显示面板的制造方法及显示面板
KR20230043634A (ko) * 2021-09-24 2023-03-31 에스케이하이닉스 주식회사 강유전층 및 금속 입자가 내장된 절연층을 포함하는 반도체 장치
JP2023149086A (ja) * 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2023149085A (ja) * 2022-03-30 2023-10-13 株式会社ジャパンディスプレイ 半導体装置の製造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118811B2 (pt) 1972-08-01 1976-06-12
RU2358354C2 (ru) 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Светоизлучающее устройство
KR100647660B1 (ko) * 2004-11-19 2006-11-23 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 채용한 평판표시장치
KR100637204B1 (ko) * 2005-01-15 2006-10-23 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
KR100637210B1 (ko) * 2005-01-28 2006-10-23 삼성에스디아이 주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 구비한 평판표시 장치
JP4880951B2 (ja) * 2005-09-06 2012-02-22 キヤノン株式会社 半導体素子、薄膜トランジスタ、及び薄膜ダイオード
KR100708720B1 (ko) * 2005-10-19 2007-04-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판 표시 장치
KR100719566B1 (ko) * 2005-10-22 2007-05-17 삼성에스디아이 주식회사 유기 박막 트랜지스터, 및 이를 구비한 평판 표시 장치
JP4793679B2 (ja) 2005-11-10 2011-10-12 富士電機株式会社 薄膜トランジスタ
JP5376750B2 (ja) * 2005-11-18 2013-12-25 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル
US8129714B2 (en) * 2007-02-16 2012-03-06 Idemitsu Kosan Co., Ltd. Semiconductor, semiconductor device, complementary transistor circuit device
JP2008270734A (ja) * 2007-03-23 2008-11-06 Sumitomo Chemical Co Ltd 有機電界効果トランジスタ
JP2010103451A (ja) * 2007-11-26 2010-05-06 Fujifilm Corp 薄膜電界効果型トランジスタおよびそれを用いた電界発光装置
JPWO2010010766A1 (ja) * 2008-07-25 2012-01-05 日本電気株式会社 電界効果型トランジスタおよび回路装置
TWI770659B (zh) * 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI508282B (zh) 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5602390B2 (ja) * 2008-08-19 2014-10-08 富士フイルム株式会社 薄膜トランジスタ、アクティブマトリクス基板、及び撮像装置
JP5644071B2 (ja) 2008-08-20 2014-12-24 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
KR20100023151A (ko) * 2008-08-21 2010-03-04 삼성모바일디스플레이주식회사 박막 트랜지스터 및 그 제조방법
JP5258467B2 (ja) * 2008-09-11 2013-08-07 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP2010283190A (ja) 2009-06-05 2010-12-16 Konica Minolta Holdings Inc 薄膜トランジスタ、及びその製造方法
JP2011009619A (ja) * 2009-06-29 2011-01-13 Konica Minolta Holdings Inc 薄膜トランジスタの製造方法及び薄膜トランジスタ
JP5604081B2 (ja) 2009-11-11 2014-10-08 出光興産株式会社 酸化物半導体を用いた、高移動度の電界効果型トランジスタ
WO2011058885A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
WO2011062057A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101800854B1 (ko) * 2009-11-20 2017-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102450889B1 (ko) * 2009-12-04 2022-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN109560140A (zh) * 2010-02-05 2019-04-02 株式会社半导体能源研究所 半导体装置
US8283469B2 (en) * 2010-03-24 2012-10-09 National Tsing Hua University Perylene diimide derivative and organic semiconductor element using the same material
KR101271827B1 (ko) * 2010-07-22 2013-06-07 포항공과대학교 산학협력단 탄소 박막 제조 방법
KR101774256B1 (ko) * 2010-11-15 2017-09-05 삼성디스플레이 주식회사 산화물 반도체 박막 트랜지스터 및 그 제조 방법
JP5259683B2 (ja) 2010-11-19 2013-08-07 株式会社東芝 サーバ装置及びプログラム
US8691621B1 (en) * 2010-12-14 2014-04-08 Sharp Laboratories Of America, Inc. Thiol bond formation concurrent with silver nanoparticle ink thermal treatment
US9202822B2 (en) * 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012216780A (ja) * 2011-03-31 2012-11-08 Ricoh Co Ltd ｐ型酸化物、ｐ型酸化物製造用組成物、ｐ型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム
US9762246B2 (en) 2011-05-20 2017-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a storage circuit having an oxide semiconductor
KR101302786B1 (ko) * 2011-05-27 2013-09-03 포항공과대학교 산학협력단 높은 일함수를 가지는 고분자 전극을 채용한 단순화된 유기 전자 소자
KR101237351B1 (ko) * 2011-05-27 2013-03-04 포항공과대학교 산학협력단 전극 및 이를 포함한 전자 소자
US8679905B2 (en) 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
JP5965107B2 (ja) 2011-06-13 2016-08-03 出光興産株式会社 薄膜トランジスタ
CN102842491B (zh) * 2011-06-24 2016-10-19 联华电子股份有限公司 金属栅极的制作方法
CN103036643B (zh) * 2011-09-30 2018-03-06 株式会社Ntt都科摩 小区间干扰消除方法、中继节点和基站
JP5783094B2 (ja) 2011-11-30 2015-09-24 株式会社リコー ｐ型酸化物、ｐ型酸化物製造用組成物、ｐ型酸化物の製造方法、半導体素子、表示素子、画像表示装置、及びシステム
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2013108630A1 (ja) * 2012-01-18 2013-07-25 出光興産株式会社 電界効果型トランジスタ
US10005879B2 (en) * 2012-02-03 2018-06-26 Basf Se Method for producing an organic semiconductor device
US20140027762A1 (en) * 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US20140183457A1 (en) * 2013-01-03 2014-07-03 Lisa H. Stecker Transistor with Organic Semiconductor Interface

Also Published As

Publication number Publication date
EP3028298A4 (en) 2016-08-03
RU2016106926A (ru) 2017-08-31
TW201511286A (zh) 2015-03-16
CN105431930A (zh) 2016-03-23
RU2631405C2 (ru) 2017-09-21
EP3028298A1 (en) 2016-06-08
SG11201600543YA (en) 2016-02-26
US20160190329A1 (en) 2016-06-30
WO2015016333A1 (en) 2015-02-05
CN109216443A (zh) 2019-01-15
CN109216443B (zh) 2022-05-17
TWI565072B (zh) 2017-01-01
JP6264090B2 (ja) 2018-01-24
JP2015046568A (ja) 2015-03-12
KR20160039656A (ko) 2016-04-11
KR101841855B1 (ko) 2018-03-23
US10672914B2 (en) 2020-06-02

Similar Documents

Publication Publication Date Title
BR112016002017A2 (pt) transistor de efeito de campo e método para produzir transistor de efeito de campo
JP2014143410A5 (ja) 半導体装置
JP2013058770A5 (pt)
JP2013138191A5 (pt)
JP2014075580A5 (ja) 半導体装置
JP2011171718A5 (pt)
JP2015181151A5 (ja) 半導体装置
TW201232785A (en) Semiconductor device and method for manufacturing semiconductor device
JP2011119690A5 (pt)
JP2011233876A5 (pt)
JP2011029635A5 (ja) 半導体装置
JP2012074692A5 (ja) 電界効果トランジスタ
BR102012018610B8 (pt) método para formar um transistor de efeito de campo metal-óxido-semicondutor (mosfet) vertical de carboneto de silício (sic)
JP2012023352A5 (pt)
JP2013236068A5 (ja) 半導体装置
EP2779247A3 (en) High electron mobility semiconductor device and manufacturing method therefor
JP2011086929A5 (ja) 半導体装置
JP2013016785A5 (pt)
EP2674979A3 (en) Trench Gate IGBT and a Method for Manufacturing the same
JP2011228691A5 (pt)
JP2015046580A5 (pt)
JP2011107697A5 (ja) 表示装置
JP2012023359A5 (pt)
JP2011054949A5 (ja) 半導体装置
JP2011103458A5 (pt)

Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements