BR9708364A - Dispositivo de memória semicondutora - Google Patents

Dispositivo de memória semicondutora

Info

Publication number
BR9708364A
BR9708364A BR9708364A BR9708364A BR9708364A BR 9708364 A BR9708364 A BR 9708364A BR 9708364 A BR9708364 A BR 9708364A BR 9708364 A BR9708364 A BR 9708364A BR 9708364 A BR9708364 A BR 9708364A
Authority
BR
Brazil
Prior art keywords
storage cells
storage
group
pct
assigned
Prior art date
Application number
BR9708364A
Other languages
English (en)
Inventor
Thomas Zettler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BR9708364A publication Critical patent/BR9708364A/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
BR9708364A 1996-03-28 1997-03-20 Dispositivo de memória semicondutora BR9708364A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19612456A DE19612456C2 (de) 1996-03-28 1996-03-28 Halbleiterspeichervorrichtung
PCT/DE1997/000576 WO1997037354A1 (de) 1996-03-28 1997-03-20 Halbleiterspeichervorrichtung

Publications (1)

Publication Number Publication Date
BR9708364A true BR9708364A (pt) 1999-08-03

Family

ID=7789796

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9708364A BR9708364A (pt) 1996-03-28 1997-03-20 Dispositivo de memória semicondutora

Country Status (11)

Country Link
US (1) US6122199A (pt)
EP (1) EP0890174B1 (pt)
JP (1) JPH11507163A (pt)
KR (1) KR20000005053A (pt)
CN (1) CN1214794A (pt)
AT (1) ATE193145T1 (pt)
BR (1) BR9708364A (pt)
DE (2) DE19612456C2 (pt)
ES (1) ES2147444T3 (pt)
RU (1) RU2182376C2 (pt)
WO (1) WO1997037354A1 (pt)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2277717C (en) * 1999-07-12 2006-12-05 Mosaid Technologies Incorporated Circuit and method for multiple match detection in content addressable memories
US6621745B1 (en) * 2002-06-18 2003-09-16 Atmel Corporation Row decoder circuit for use in programming a memory device
US7782240B2 (en) * 2007-05-29 2010-08-24 Atmel Corporation Device and method of supplying power to targets on single-wire interface
US8917560B1 (en) * 2013-11-13 2014-12-23 Nanya Technology Corporation Half bit line high level voltage genertor, memory device and driving method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1171849A1 (ru) * 1983-12-19 1985-08-07 Организация П/Я А-3106 Запоминающее устройство
US4639622A (en) * 1984-11-19 1987-01-27 International Business Machines Corporation Boosting word-line clock circuit for semiconductor memory
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
JPH01158777A (ja) * 1987-12-15 1989-06-21 Sony Corp フローティングゲート型不揮発性メモリ
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
JP2905666B2 (ja) * 1992-05-25 1999-06-14 三菱電機株式会社 半導体装置における内部電圧発生回路および不揮発性半導体記憶装置
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JP3155879B2 (ja) * 1994-02-25 2001-04-16 株式会社東芝 半導体集積回路装置
US5513147A (en) * 1994-12-19 1996-04-30 Alliance Semiconductor Corporation Row driving circuit for memory devices
US5619456A (en) * 1996-01-19 1997-04-08 Sgs-Thomson Microelectronics, Inc. Synchronous output circuit

Also Published As

Publication number Publication date
DE19612456C2 (de) 2000-09-28
US6122199A (en) 2000-09-19
EP0890174A1 (de) 1999-01-13
KR20000005053A (ko) 2000-01-25
JPH11507163A (ja) 1999-06-22
ES2147444T3 (es) 2000-09-01
EP0890174B1 (de) 2000-05-17
DE59701716D1 (de) 2000-06-21
ATE193145T1 (de) 2000-06-15
WO1997037354A1 (de) 1997-10-09
RU2182376C2 (ru) 2002-05-10
DE19612456A1 (de) 1997-11-13
CN1214794A (zh) 1999-04-21

Similar Documents

Publication Publication Date Title
TW330265B (en) Semiconductor apparatus
EP0725402A3 (en) Semiconductor memory device
TW345661B (en) Semiconductor memory device and its driving method
ATE314721T1 (de) Ferro-elektrischer speicher und sein betriebsverfahren
TW324823B (en) Cross-coupled bitline segments for generalized data propagation
WO2007050679A3 (en) Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells
US4665508A (en) Gallium arsenide MESFET memory
KR950009735A (ko) 불휘발성 반도체 기억장치
EP0822557A3 (en) Non-volatile semiconductor memory device with variable source voltage
KR950006850A (ko) 선택기 회로
KR950020749A (ko) 반도체 불휘발성 기억장치
EP1794756B1 (en) Memory control with selective retention
DE60035115D1 (de) Architketur, verfahren und schaltungen für speichervorrichtungen mit geringer leistungsaufnahme
TW326534B (en) Semiconductor memory device
KR860002155A (ko) 반도체 장치
KR940022565A (ko) 메모리 셀의 과소거시에도 데이타를 판독 출력하는 전기적으로 소거가능한 비휘발성 반도체 메모리
DE59706533D1 (de) Einzelelektron-Speicherzellenanordnung
BR9708364A (pt) Dispositivo de memória semicondutora
KR920006974A (ko) 다이너믹형 반도체기억장치
EP0741389A3 (en) Reading a non-volatile memory array
DE59701848D1 (de) Halbleiterspeichervorrichtung
WO2004055821A3 (en) Architecture for high-speed magnetic memories
DE69629430D1 (de) Austausch-Halbleiterfestwertspeicher
TW238387B (en) Decoding circuit for semiconductor memory device and its process
BR9810100A (pt) Circuito de comando para uma disposição de memórias-semicondutores não-voláteis

Legal Events

Date Code Title Description
FF Decision: intention to grant
FA11 Dismissal: dismissal - article 38, par. 2 of industrial property law