BRPI0409464A - cadinho para um dispositivo para produzir um bloco de material cristalino e processo para sua produção - Google Patents

cadinho para um dispositivo para produzir um bloco de material cristalino e processo para sua produção

Info

Publication number
BRPI0409464A
BRPI0409464A BRPI0409464-6A BRPI0409464A BRPI0409464A BR PI0409464 A BRPI0409464 A BR PI0409464A BR PI0409464 A BRPI0409464 A BR PI0409464A BR PI0409464 A BRPI0409464 A BR PI0409464A
Authority
BR
Brazil
Prior art keywords
crucible
block
crystalline material
fabrication
produce
Prior art date
Application number
BRPI0409464-6A
Other languages
English (en)
Inventor
Roland Einhaus
Francois Lissalde
Pascal Rivat
Original Assignee
Apollon Solar
Cyberstar
Efd Induction As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=33041932&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI0409464(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Apollon Solar, Cyberstar, Efd Induction As filed Critical Apollon Solar
Publication of BRPI0409464A publication Critical patent/BRPI0409464A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/08—Quartz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Photovoltaic Devices (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Details Of Cutting Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

"CADINHO PARA UM DISPOSITIVO PARA PRODUZIR UM BLOCO DE MATERIAL CRISTALINO E PROCESSO PARA SUA PRODUçãO". O fundo (7) do cadinho tem propriedades de transferência de calor muito maiores, paralelas a um eixo geométrica substancialmente perpendicular ao fundo (7), do que aquelas das paredes laterais (8). O fundo (7) e as paredes laterais (8) são formadas por materiais dotados dos mesmos constituintes químicos. O fundo (7) pode ser transparente à radiação infravermelha e as paredes laterais (8) opacas à radiação infravermelha. O fundo (7) pode ser construído de sílica amorfa e as paredes laterais(8) de cerâmico de quartzo opaco. O cadinho também pode ser construído de grafita. O aparelho pode compreender um feltro de grafita (9), disposto entre o fundo (7) do cadinho e meios de refrigeração (4) e meios de compressão (10) do feltro de grafita (9). é assim possível definir um gradiente de temperatura compreendido entre 8<198>C/m e 30<198>C/m na fase líquida.
BRPI0409464-6A 2003-04-17 2004-04-09 cadinho para um dispositivo para produzir um bloco de material cristalino e processo para sua produção BRPI0409464A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0304803A FR2853913B1 (fr) 2003-04-17 2003-04-17 Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
PCT/FR2004/000894 WO2004094704A2 (fr) 2003-04-17 2004-04-09 Creuset pour un dispositif de fabrication d’un bloc de materiau cristallin et procede de fabrication

Publications (1)

Publication Number Publication Date
BRPI0409464A true BRPI0409464A (pt) 2006-04-18

Family

ID=33041932

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0409464-6A BRPI0409464A (pt) 2003-04-17 2004-04-09 cadinho para um dispositivo para produzir um bloco de material cristalino e processo para sua produção

Country Status (14)

Country Link
US (1) US7442255B2 (pt)
EP (1) EP1613795B2 (pt)
JP (1) JP4607096B2 (pt)
CN (1) CN100429333C (pt)
AT (1) ATE350519T1 (pt)
BR (1) BRPI0409464A (pt)
DE (1) DE602004004095T3 (pt)
ES (1) ES2279402T5 (pt)
FR (1) FR2853913B1 (pt)
NO (1) NO20055454L (pt)
PL (1) PL1613795T5 (pt)
RU (1) RU2344206C2 (pt)
WO (1) WO2004094704A2 (pt)
ZA (1) ZA200507846B (pt)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
EP2038454A1 (en) * 2006-06-23 2009-03-25 Rec Scanwafer AS Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots
FR2908125B1 (fr) * 2006-11-02 2009-11-20 Commissariat Energie Atomique Procede de purification de silicium metallurgique par solidification dirigee
FR2909990B1 (fr) * 2006-12-13 2009-03-13 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
DE102007026298A1 (de) * 2007-06-06 2008-12-11 Freiberger Compound Materials Gmbh Anordnung und Verfahren zur Herstellung eines Kristalls aus der Schmelze eines Rohmaterials sowie Einkristall
FR2918675B1 (fr) * 2007-07-10 2009-08-28 Commissariat Energie Atomique Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique.
JP5277654B2 (ja) * 2008-02-15 2013-08-28 住友化学株式会社 ホウ素添加シリコンの製造方法
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
US20110180229A1 (en) * 2010-01-28 2011-07-28 Memc Singapore Pte. Ltd. (Uen200614794D) Crucible For Use In A Directional Solidification Furnace
JP5676900B2 (ja) * 2010-03-26 2015-02-25 三菱マテリアル株式会社 多結晶シリコンインゴットの製造方法
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US20120248286A1 (en) 2011-03-31 2012-10-04 Memc Singapore Pte. Ltd. (Uen200614794D) Systems For Insulating Directional Solidification Furnaces
EP2739771A4 (en) * 2011-08-01 2014-11-19 Gtat Corp LIQUID-COOLED HEAT EXCHANGERS
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
CN102677166B (zh) * 2012-06-08 2015-06-03 常州天合光能有限公司 一种多晶硅铸锭用梯度坩埚的制备方法
CN102703969B (zh) * 2012-06-14 2015-04-15 天威新能源控股有限公司 低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法
DE102015118042A1 (de) 2015-10-22 2017-04-27 Nexwafe Gmbh Verfahren und Vorrichtung zum Herstellen einer Halbleiterschicht
JP7068914B2 (ja) * 2018-04-26 2022-05-17 昭和電工株式会社 断熱性遮蔽部材及びそれを備えた単結晶製造装置

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DE2259353C3 (de) * 1972-12-04 1975-07-10 Heraeus-Quarzschmelze Gmbh, 6450 Hanau Tiegel aus Quarzglas oder Quarzgut zur Verwendung beim Züchten von Einkristallen
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
DE2543752B2 (de) * 1975-10-01 1979-03-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zum Herstellen eines Einkristalles
DE2928089C3 (de) * 1979-07-12 1982-03-04 Heraeus Quarzschmelze Gmbh, 6450 Hanau Verbundtiegel für halbleitertechnologische Zwecke und Verfahren zur Herstellung
FR2487863A1 (fr) * 1980-08-01 1982-02-05 Sklyarov Alexei Dispositif pour la croissance des monocristaux a partir d'alliages a constituants multiples
IT1137729B (it) * 1981-07-20 1986-09-10 Heliosil Spa Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
JPH01142464U (pt) * 1988-03-23 1989-09-29
JP2553633B2 (ja) * 1988-05-19 1996-11-13 住友電気工業株式会社 高温炉の断熱方法
CN1025633C (zh) * 1992-06-19 1994-08-10 中国科学院固体物理研究所 金属双晶及三晶体的生长技术和装置
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
JP2934121B2 (ja) * 1993-06-25 1999-08-16 信越化学工業株式会社 単結晶の製造方法
JPH08301683A (ja) * 1995-05-09 1996-11-19 Nippon Koki Co Ltd エアバッグ用ガス発生器
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JPH10101484A (ja) * 1996-09-30 1998-04-21 Canon Inc 結晶製造装置及び方法
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Also Published As

Publication number Publication date
CN1774526A (zh) 2006-05-17
PL1613795T5 (pl) 2010-10-29
EP1613795A2 (fr) 2006-01-11
ATE350519T1 (de) 2007-01-15
PL1613795T3 (pl) 2007-05-31
FR2853913A1 (fr) 2004-10-22
US7442255B2 (en) 2008-10-28
JP2006526751A (ja) 2006-11-24
DE602004004095D1 (de) 2007-02-15
ES2279402T3 (es) 2007-08-16
ES2279402T5 (es) 2010-10-08
DE602004004095T3 (de) 2010-12-02
EP1613795B2 (fr) 2010-06-02
NO20055454L (no) 2005-11-17
RU2005135646A (ru) 2006-03-10
WO2004094704A3 (fr) 2004-12-16
CN100429333C (zh) 2008-10-29
ZA200507846B (en) 2007-02-28
DE602004004095T2 (de) 2007-07-12
RU2344206C2 (ru) 2009-01-20
EP1613795B1 (fr) 2007-01-03
WO2004094704A2 (fr) 2004-11-04
FR2853913B1 (fr) 2006-09-29
US20060144326A1 (en) 2006-07-06
JP4607096B2 (ja) 2011-01-05

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL.