BRPI0412448A - comutador de lado positivo n-fet de baixa potência - Google Patents

comutador de lado positivo n-fet de baixa potência

Info

Publication number
BRPI0412448A
BRPI0412448A BRPI0412448-0A BRPI0412448A BRPI0412448A BR PI0412448 A BRPI0412448 A BR PI0412448A BR PI0412448 A BRPI0412448 A BR PI0412448A BR PI0412448 A BRPI0412448 A BR PI0412448A
Authority
BR
Brazil
Prior art keywords
positive side
side switch
fet
switch
vdd
Prior art date
Application number
BRPI0412448-0A
Other languages
English (en)
Inventor
Amr Fahim
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BRPI0412448A publication Critical patent/BRPI0412448A/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Dc-Dc Converters (AREA)

Abstract

"COMUTADOR DE LADO POSITIVO N-FET DE BAIXA POTêNCIA". Um comutador de lado positivo (high-sideswitch) N-FET (210) apresenta melhor desempenho (por exemplo, menor corrente de fuga, resistência ON mais baixa e menor área) em relação a um comutador de lado positivo P-FET. O comutador de lado positivo N-FET (210) inclui pelo menos um dispositivo N-FET (212) e se acopla entre uma fonte de alimentação (VDD) e um circuito de carga (220), o qual pode ser, por exemplo, um microprocessador, um processador de sinal digital, ou uma unidade de memória. O comutador de lado positivo (210) acopla a fonte de alimentação (VDD) ao circuito de carga (220) quando o comutador de lado positivo (210) é habilitado e corta a fonte de alimentação (VDD) do circuito de carga (220) quando desabilitado. Um 'charge pump' (230) se acopla ao comutador de lado positivo (210) e provê um sinal de controle (Vhs) . Tal sinal de controle (Vhs) é suficientemente elevado quando o comutador de lado positivo (210) é habilitado para assegurar que o dispositivo N-FET (212) opere em uma região linear e possui um baixa queda de tensão de consumo para fonte. O comutador de lado positivo (210) pode ser operado como um comutador de energia ou em uma configuração de realimentação para implementar um regulador de tensão linear ou digital.
BRPI0412448-0A 2003-07-10 2004-07-01 comutador de lado positivo n-fet de baixa potência BRPI0412448A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/617,897 US7119606B2 (en) 2003-07-10 2003-07-10 Low-power, low-area power headswitch
PCT/US2004/021529 WO2005008892A1 (en) 2003-07-10 2004-07-01 Low-power n-fet high-side switch

Publications (1)

Publication Number Publication Date
BRPI0412448A true BRPI0412448A (pt) 2006-09-19

Family

ID=33565026

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0412448-0A BRPI0412448A (pt) 2003-07-10 2004-07-01 comutador de lado positivo n-fet de baixa potência

Country Status (6)

Country Link
US (1) US7119606B2 (pt)
KR (1) KR101127782B1 (pt)
BR (1) BRPI0412448A (pt)
IL (1) IL173043A (pt)
TW (1) TWI348271B (pt)
WO (1) WO2005008892A1 (pt)

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TWI466422B (zh) * 2012-11-06 2014-12-21 Orise Technology Co Ltd 多重疊壓的電路架構
US9160159B2 (en) * 2013-07-24 2015-10-13 Stmicroelectronics S.R.L. Circuit breaker and method of controlling a power transistor with a circuit breaker
US9298253B2 (en) 2013-09-13 2016-03-29 Globalfoundries Inc. Accelerating the microprocessor core wakeup by predictively executing a subset of the power-up sequence
US9423865B2 (en) 2013-09-13 2016-08-23 Globalfoundries Inc. Accelerating microprocessor core wake up via charge from capacitance tank without introducing noise on power grid of running microprocessor cores
US9389674B2 (en) 2013-09-13 2016-07-12 International Business Machines Corporation Predictively turning off a charge pump supplying voltage for overdriving gates of the power switch header in a microprocessor with power gating
US9385600B2 (en) * 2013-11-22 2016-07-05 Texas Instruments Incorporated Low-loss step-up and step-down voltage converter
JP2016024773A (ja) * 2014-07-24 2016-02-08 株式会社東芝 電源回路
US20170033793A1 (en) * 2015-07-31 2017-02-02 Texas Instruments Incorporated Millivolt power harvesting fet controller
US10128833B2 (en) 2015-07-31 2018-11-13 Texas Instruments Incorporated Millivolt power harvesting FET controller
US9647551B2 (en) * 2015-08-14 2017-05-09 Qualcomm Incorporated Switched power control circuits for controlling the rate of providing voltages to powered circuits, and related systems and methods
CN106026639B (zh) * 2016-07-18 2018-08-10 西安紫光国芯半导体有限公司 一种应用于电荷泵系统的电压调整器
US10185342B2 (en) * 2016-11-04 2019-01-22 Qualcomm Incorporated Configurable charge controller
US10475705B2 (en) * 2016-11-21 2019-11-12 Board Of Regents, The University Of Texas System CMOS process-dependent near-threshold voltage regulation
JP6856121B2 (ja) 2017-07-06 2021-04-07 株式会社村田製作所 電圧供給回路および高周波回路モジュール
US10734893B1 (en) * 2019-05-03 2020-08-04 Psemi Corporation Driving circuit for switches used in a charge pump
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Also Published As

Publication number Publication date
US7119606B2 (en) 2006-10-10
IL173043A0 (en) 2006-06-11
KR20060038442A (ko) 2006-05-03
WO2005008892A1 (en) 2005-01-27
US20050007178A1 (en) 2005-01-13
IL173043A (en) 2010-12-30
TW200515700A (en) 2005-05-01
TWI348271B (en) 2011-09-01
KR101127782B1 (ko) 2012-03-28

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012.