ES2112895T3 - Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra. - Google Patents

Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra.

Info

Publication number
ES2112895T3
ES2112895T3 ES92830308T ES92830308T ES2112895T3 ES 2112895 T3 ES2112895 T3 ES 2112895T3 ES 92830308 T ES92830308 T ES 92830308T ES 92830308 T ES92830308 T ES 92830308T ES 2112895 T3 ES2112895 T3 ES 2112895T3
Authority
ES
Spain
Prior art keywords
maximum current
mos transistor
circuit
excite
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92830308T
Other languages
English (en)
Inventor
Alberto Poma
Vanni Poletto
Marco Morelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Marelli Europe SpA
STMicroelectronics lnc USA
Original Assignee
Magneti Marelli SpA
SGS Thomson Microelectronics SRL
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magneti Marelli SpA, SGS Thomson Microelectronics SRL, SGS Thomson Microelectronics Inc filed Critical Magneti Marelli SpA
Application granted granted Critical
Publication of ES2112895T3 publication Critical patent/ES2112895T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

UN RESISTOR (RS) SE PONE EN SERIE CON LA LINEA DESCARGA-SUMINISTRO DEL TRANSISTOR DE POTENCIA MOS (M1). EL TERMINAL DE SUMINISTRO (S) DE UN AMPLIFICADOR OPERACIONAL DE TRANSCONDUCTANCIA (A) SE CONECTA A LA SALIDA DE UN CIRCUITO DE CARGA O DE ELEVACION DE LA TENSION QUE PUEDE DAR UN VOLTAJE DE SALIDA MAYOR QUE EL DE EL SUMINISTRO DE TENSION (VS) AL CUAL SE CONECTA EL ANODO DEL TRANSISTOR MOS (M1). LAS ENTRADAS DEL AMPLIFICADOR (A) SE CONECTAN AL RESISTOR (RS) Y LA SALIDA SE CONECTA A LA PUERTA DEL TRANSISTOR MOS DE MANERA QUE, DURANTE SU FUNCIONAMIENTO, LA CORRIENTE MAXIMA QUE FLUYE A TRAVES DEL TRANSISTOR DE POTENCIA ESTA LIMITADA A UN VALOR PROPORCIONAL A UN VOLTAJE DE REFERENCIA (VR).
ES92830308T 1992-06-16 1992-06-16 Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra. Expired - Lifetime ES2112895T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830308A EP0574646B1 (en) 1992-06-16 1992-06-16 A circuit for controlling the maximum current in a power-MOS transistor used for driving a load connected to ground

Publications (1)

Publication Number Publication Date
ES2112895T3 true ES2112895T3 (es) 1998-04-16

Family

ID=8212122

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92830308T Expired - Lifetime ES2112895T3 (es) 1992-06-16 1992-06-16 Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra.

Country Status (5)

Country Link
US (1) US5404053A (es)
EP (1) EP0574646B1 (es)
JP (1) JPH0677741A (es)
DE (1) DE69223775T2 (es)
ES (1) ES2112895T3 (es)

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DE69428782T2 (de) * 1994-05-25 2002-05-08 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe
US5504448A (en) * 1994-08-01 1996-04-02 Motorola, Inc. Current limit sense circuit and method for controlling a transistor
US5519341A (en) * 1994-12-02 1996-05-21 Texas Instruments Incorporated Cross coupled quad comparator for current sensing independent of temperature
US5672992A (en) * 1995-04-11 1997-09-30 International Rectifier Corporation Charge pump circuit for high side switch
EP0772283B1 (en) * 1995-10-31 2000-01-12 STMicroelectronics S.r.l. Linearly regulated voltage multiplier
DE19548612B4 (de) * 1995-12-23 2005-10-06 Robert Bosch Gmbh Mehrkreisiges Fahrzeugbordnetz mit einem elektronischen Analogschalter
GB2315176A (en) * 1996-07-10 1998-01-21 Motorola Inc Current sense arrangement for an FET using a transistor as a sensing element
JP3195256B2 (ja) * 1996-10-24 2001-08-06 株式会社東芝 半導体集積回路
US5828245A (en) * 1996-10-24 1998-10-27 Stmicroelectronics, Inc. Driver circuit including amplifier operated in a switching mode
EP0846996B1 (en) * 1996-12-05 2003-03-26 STMicroelectronics S.r.l. Power transistor control circuit for a voltage regulator
US5886512A (en) * 1996-12-20 1999-03-23 General Electric Company Low power and wide input voltage range DC to DC switching converter
US6054874A (en) * 1997-07-02 2000-04-25 Cypress Semiconductor Corp. Output driver circuit with switched current source
US6084439A (en) * 1997-07-02 2000-07-04 Cypress Semiconductor Corp. Peak detector circuit with extended input voltage range
US6469564B1 (en) 1998-04-14 2002-10-22 Minebea Co., Ltd. Circuit simulating a diode
US6452441B1 (en) * 1999-10-01 2002-09-17 Advanced Micro Devices, Inc. Low threshold voltage device with charge pump for reducing standby current in an integrated circuit having reduced supply voltage
US6603358B2 (en) * 2000-08-23 2003-08-05 Intersil Americas Inc. Integrated circuit with current-limited power output and associated method
WO2002084873A1 (en) * 2001-03-28 2002-10-24 Koninklijke Philips Electronics N.V. Synchronous rectifiers
DE10154642C1 (de) 2001-11-07 2003-07-17 Siemens Ag Auswerteschaltung für einen induktiven Sensor
DE10252827B3 (de) * 2002-11-13 2004-08-05 Siemens Ag Schaltungsanordnung zur schnellen Ansteuerung insbesondere induktiver Lasten
US6919651B2 (en) 2002-11-26 2005-07-19 Siemens Aktiengesellschaft Circuit arrangement for high-speed switching of inductive loads
JP4727232B2 (ja) * 2003-06-06 2011-07-20 株式会社半導体エネルギー研究所 半導体装置
US7119606B2 (en) * 2003-07-10 2006-10-10 Qualcomm, Incorporated Low-power, low-area power headswitch
EP1757174B1 (en) * 2004-05-17 2011-03-16 International Rectifier Corporation High current charge pump for intelligent power switch driver
WO2006102927A1 (en) * 2005-04-01 2006-10-05 Freescale Semiconductor, Inc. Charge pump and control scheme
SG135975A1 (en) * 2006-03-07 2007-10-29 St Microelectronics Asia Circuit and method for fast switching of a current mirror with large mosfet size
US8222927B2 (en) * 2009-04-09 2012-07-17 Mediatek Inc. Reference buffer circuit
EP2280468B1 (en) * 2009-07-28 2015-09-09 STMicroelectronics Srl Driving circuit for an electric load and system comprising the circuit
TWI404341B (zh) * 2009-12-31 2013-08-01 Realtek Semiconductor Corp 記憶控制電壓並鎖定頻率訊號之電路、鎖相迴路裝置與其控制方法
EP2426820B1 (en) 2010-09-07 2013-09-04 Dialog Semiconductor GmbH Circuit controlling HS-NMOS power switches with slew-rate limitation
US10175271B2 (en) * 2012-12-31 2019-01-08 Silicon Laboratories Inc. Apparatus for differencing comparator and associated methods
US9958891B1 (en) * 2015-05-26 2018-05-01 Arrowhead Center, Inc. High-voltage micro-ampere current regulator
US10965254B2 (en) * 2018-06-04 2021-03-30 Stmicroelectronics S.R.L. Low noise amplifier circuit for a thermal varying resistance
CN109618466B (zh) * 2019-01-21 2024-02-20 广东基地灯饰有限公司 一种基于功率管安全防护的led驱动电路
CN114935959B (zh) * 2022-06-09 2025-08-15 红壹佰照明有限公司 一种过温降频保护电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514648A (en) * 1982-08-27 1985-04-30 Motorola, Inc. Current sense circuit for a bubble memory voltage booster
DE3536447C2 (de) * 1985-10-12 1993-10-21 Licentia Gmbh Kurzschluß- und überlastfeste Transistorausgangsstufe
US4654545A (en) * 1986-02-28 1987-03-31 Rca Corporation Overvoltage comparator
GB2228384A (en) * 1989-02-17 1990-08-22 Philips Electronic Associated Current conveyor circuit
US5021682A (en) * 1989-05-11 1991-06-04 National Semiconductor Corporation Instantaneous power limiting circuit
US5017816A (en) * 1989-11-08 1991-05-21 National Semiconductor Corp. Adaptive gate discharge circuit for power FETS
US5023474A (en) * 1989-11-08 1991-06-11 National Semiconductor Corp. Adaptive gate charge circuit for power FETs
US5245526A (en) * 1992-02-07 1993-09-14 Power Integrations, Inc. Below ground current sensing with current input to control threshold

Also Published As

Publication number Publication date
DE69223775T2 (de) 1998-04-30
EP0574646A1 (en) 1993-12-22
DE69223775D1 (de) 1998-02-05
JPH0677741A (ja) 1994-03-18
US5404053A (en) 1995-04-04
EP0574646B1 (en) 1997-12-29

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