BRPI0413567A - método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via - Google Patents

método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via

Info

Publication number
BRPI0413567A
BRPI0413567A BRPI0413567-9A BRPI0413567A BRPI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A BR PI0413567 A BRPI0413567 A BR PI0413567A
Authority
BR
Brazil
Prior art keywords
group
iiia
alloy
film
preparation
Prior art date
Application number
BRPI0413567-9A
Other languages
English (en)
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI0413567(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Publication of BRPI0413567A publication Critical patent/BRPI0413567A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Particle Accelerators (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

"MéTODO PARA A PREPARAçãO DE PELìCULAS SEMICONDUTORAS DE LIGA QUATERNáRIA OU SUPERIOR DE GRUPO IB-IIIA-VIA". A presente invenção refere-se a um método para produzir películas semicondutoras de liga quaternária ou superior de grupo IB-IIIA-VIA em que o método compreende as etapas de (i) fornecer uma película de metal que compreende uma mistura de metais de grupo IB e grupo IIIA; (II) tratar por calor a película de metal na presença de uma fonte de um primeiro elemento de grupo VIA (o referido primeiro elemento de grupo VIA que a seguir será referido como VIA~ 1~) sob condições para formar uma primeira película que compreende uma mistura de pelo menos uma liga binária selecionada do grupo que consiste em uma liga de grupo IB -VIA~ 1~ e uma liga de grupo IIIA-VIA~ 1~ e pelo menos uma liga ternária de grupo IB-IIIA-VIA~ 1~; (III) opcionalmente tratar por calor a primeira película na presença de uma fonte de um segundo elemento de grupo VIA (o referido segundo elemento de grupo VI que a seguir será referido como VIA~ 2~) sob condições para converter a primeira película em uma segunda película compreendendo pelo menos uma liga selecionada do grupo que consiste em uma liga do grupo IB-VIA~ 1~-VIA~ 2~ e uma liga do grupo IIIA-VIA~ 1~-VIA~ 2~; e pelo menos uma liga ternária de grupo de etapa (ii); (iv) tratar por calor a primeira película ou segunda película para formar uma película semicondutora de liga quaternária ou superior de grupo IB-IIIA-VIA.
BRPI0413567-9A 2003-08-14 2004-08-13 método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via BRPI0413567A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (1)

Publication Number Publication Date
BRPI0413567A true BRPI0413567A (pt) 2006-10-17

Family

ID=34198392

Family Applications (2)

Application Number Title Priority Date Filing Date
BRPI0413567-9A BRPI0413567A (pt) 2003-08-14 2004-08-13 método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via
BRPI0413572-5A BRPI0413572A (pt) 2003-08-14 2004-08-13 pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior

Family Applications After (1)

Application Number Title Priority Date Filing Date
BRPI0413572-5A BRPI0413572A (pt) 2003-08-14 2004-08-13 pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior

Country Status (19)

Country Link
US (3) US7682939B2 (pt)
EP (3) EP2284905A2 (pt)
JP (2) JP4994032B2 (pt)
KR (2) KR101027318B1 (pt)
AP (2) AP2180A (pt)
AT (1) ATE510304T2 (pt)
AU (2) AU2004301076B2 (pt)
BR (2) BRPI0413567A (pt)
CA (2) CA2539556C (pt)
CY (1) CY1111940T1 (pt)
DE (1) DE202004021800U1 (pt)
DK (1) DK1654769T4 (pt)
EA (2) EA010171B1 (pt)
EG (1) EG25410A (pt)
ES (1) ES2366888T5 (pt)
IL (2) IL173693A (pt)
MX (2) MXPA06001723A (pt)
OA (2) OA13236A (pt)
WO (2) WO2005017979A2 (pt)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
CA2637111C (en) * 2006-01-12 2013-02-26 Heliovolt Corporation Compositions including controlled segregated phase domain structures
US20080057203A1 (en) * 2006-06-12 2008-03-06 Robinson Matthew R Solid group iiia particles formed via quenching
DE102006055662B3 (de) * 2006-11-23 2008-06-26 Gfe Metalle Und Materialien Gmbh Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen
WO2008121997A2 (en) * 2007-03-30 2008-10-09 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
WO2009017172A1 (ja) * 2007-08-02 2009-02-05 Showa Shell Sekiyu K. K. Ｃｉｓ系薄膜太陽電池の光吸収層の作製方法
US8258001B2 (en) * 2007-10-26 2012-09-04 Solopower, Inc. Method and apparatus for forming copper indium gallium chalcogenide layers
US8779283B2 (en) * 2007-11-29 2014-07-15 General Electric Company Absorber layer for thin film photovoltaics and a solar cell made therefrom
JP4620105B2 (ja) * 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
KR101447113B1 (ko) * 2008-01-15 2014-10-07 삼성전자주식회사 화합물 반도체 수직 적층 이미지 센서
US20090215224A1 (en) * 2008-02-21 2009-08-27 Film Solar Tech Inc. Coating methods and apparatus for making a cigs solar cell
DE102008024230A1 (de) * 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
ES2581378T3 (es) † 2008-06-20 2016-09-05 Volker Probst Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) * 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
CN102471061B (zh) * 2009-09-04 2014-09-24 大阳日酸株式会社 太阳能电池用硒化氢混合气体的供给方法以及供给装置
TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
KR20110060139A (ko) * 2009-11-30 2011-06-08 삼성전자주식회사 태양 전지 제조 방법
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
US8969720B2 (en) 2010-03-17 2015-03-03 Dow Global Technologies Llc Photoelectronically active, chalcogen-based thin film structures incorporating tie layers
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
WO2011132915A2 (ko) * 2010-04-19 2011-10-27 한국생산기술연구원 태양 전지 제조 방법
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN102870234B (zh) * 2010-04-30 2016-01-20 陶氏环球技术有限责任公司 制造基于硫属化物的光伏电池的方法
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
KR20110128580A (ko) 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 제조 방법
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
US9142408B2 (en) 2010-08-16 2015-09-22 Alliance For Sustainable Energy, Llc Liquid precursor for deposition of indium selenide and method of preparing the same
EP2608274A1 (en) 2010-08-17 2013-06-26 Toppan Printing Co., Ltd. Ink for production of compound semiconductor thin film, compound semiconductor thin film produced using the ink, solar cell equipped with the compound semiconductor thin film, and process for production of the solar cell
JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
CN103222063A (zh) * 2010-11-22 2013-07-24 京瓷株式会社 光电转换装置
JP2012160514A (ja) * 2011-01-31 2012-08-23 Kyocera Corp 金属カルコゲナイド層の製造方法および光電変換装置の製造方法
EA020377B1 (ru) * 2011-05-12 2014-10-30 Общество С Ограниченной Ответственностью "Изовак" Способ формирования тонких пленок cigs для солнечных батарей и устройство для его реализации
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2013021231A (ja) * 2011-07-13 2013-01-31 Kyocera Corp 半導体層の製造方法および光電変換装置の製造方法
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク． 生体撮像装置および関連方法
EP2791054A4 (en) * 2011-12-15 2016-03-09 Midsummer Ab RECYCLING OF COPPER INDIUM GALLIUM DISELENID
US20130344646A1 (en) * 2011-12-21 2013-12-26 Intermolecular, Inc. Absorbers for High-Efficiency Thin-Film PV
DE102012205378A1 (de) * 2012-04-02 2013-10-02 Robert Bosch Gmbh Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule
ITFI20120090A1 (it) * 2012-05-10 2013-11-11 Advanced Res On Pv Tech S R L Processo per la produzione di celle solari a film sottili
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
JPWO2014064823A1 (ja) * 2012-10-26 2016-09-05 株式会社日立製作所 半導体膜の製造方法、太陽電池及びカルコパイライト化合物
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US9768015B2 (en) * 2015-06-11 2017-09-19 Alliance For Sustainable Energy, Llc Methods of forming CIGS films
US11881536B2 (en) 2018-02-16 2024-01-23 Newsouth Innovations Pty Limited Adamantine semiconductor and uses thereof
KR102015985B1 (ko) * 2018-04-17 2019-08-29 한국과학기술연구원 태양전지용 cigs 박막의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555615A (ja) * 1991-08-28 1993-03-05 Fuji Electric Co Ltd 薄膜太陽電池の製造方法
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US5441897A (en) 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
US5674555A (en) 1995-11-30 1997-10-07 University Of Delaware Process for preparing group Ib-IIIa-VIa semiconducting films
JPH1012635A (ja) * 1996-04-26 1998-01-16 Yazaki Corp Ｉ−ｉｉｉ−ｖｉ２系薄膜層の形成方法及びその形成装置
JP2922466B2 (ja) 1996-08-29 1999-07-26 時夫 中田 薄膜太陽電池
US5985691A (en) 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
JP4177480B2 (ja) 1998-05-15 2008-11-05 インターナショナル ソーラー エレクトリック テクノロジー，インコーポレイテッド 化合物半導体フィルムおよび関連電子装置の製造方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
WO2001037324A1 (en) 1999-11-16 2001-05-25 Midwest Research Institute A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US20030008493A1 (en) * 2001-07-03 2003-01-09 Shyh-Dar Lee Interconnect structure manufacturing

Also Published As

Publication number Publication date
EP1654769A2 (en) 2006-05-10
AP2180A (en) 2010-11-29
WO2005017979A2 (en) 2005-02-24
KR101027318B1 (ko) 2011-04-06
KR20060082075A (ko) 2006-07-14
AP2006003507A0 (en) 2006-02-28
EA009012B1 (ru) 2007-10-26
IL173693A (en) 2014-01-30
AU2004301076B2 (en) 2009-11-05
MXPA06001726A (es) 2007-05-04
US20060222558A1 (en) 2006-10-05
ES2366888T3 (es) 2011-10-26
OA13237A (en) 2006-12-13
IL173693A0 (en) 2006-07-05
EP1654769B1 (en) 2011-05-18
US20100190292A1 (en) 2010-07-29
CA2539556A1 (en) 2005-02-24
US7682939B2 (en) 2010-03-23
DK1654769T3 (da) 2011-09-12
ATE510304T2 (de) 2011-06-15
EG25410A (en) 2012-01-02
CA2539556C (en) 2010-10-26
CY1111940T1 (el) 2015-11-04
JP4864705B2 (ja) 2012-02-01
EP2284905A2 (en) 2011-02-16
CA2535703C (en) 2011-04-19
ES2366888T5 (es) 2018-05-17
US8735214B2 (en) 2014-05-27
IL173694A0 (en) 2006-07-05
AP2006003508A0 (en) 2006-02-28
DE202004021800U1 (de) 2011-04-21
DK1654769T4 (en) 2018-05-22
BRPI0413572A (pt) 2006-10-17
KR20060058717A (ko) 2006-05-30
JP2007502247A (ja) 2007-02-08
HK1097105A1 (zh) 2007-06-15
EA010171B1 (ru) 2008-06-30
WO2005017978A2 (en) 2005-02-24
AP2149A (en) 2010-09-01
OA13236A (en) 2006-12-13
JP2007503708A (ja) 2007-02-22
AU2004301076A1 (en) 2005-02-24
CA2535703A1 (en) 2005-02-24
KR101004452B1 (ko) 2010-12-28
MXPA06001723A (es) 2007-04-25
US20070004078A1 (en) 2007-01-04
EA200600406A1 (ru) 2006-08-25
EP1654751A2 (en) 2006-05-10
AU2004301075A1 (en) 2005-02-24
EP1654769B2 (en) 2018-02-07
US7744705B2 (en) 2010-06-29
EA200600407A1 (ru) 2006-08-25
JP4994032B2 (ja) 2012-08-08
WO2005017978A3 (en) 2005-10-13
AU2004301075B2 (en) 2009-10-08
WO2005017979A3 (en) 2006-06-01

Similar Documents

Publication Publication Date Title
BRPI0413567A (pt) método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via
Lodgaard et al. Precipitation of dispersoids containing Mn and/or Cr in Al–Mg–Si alloys
Gazizov et al. Precipitation structure and strengthening mechanisms in an Al-Cu-Mg-Ag alloy
Zhang et al. Self healing of creep damage by gold precipitation in iron alloys
Horita et al. Achieving high strength and high ductility in precipitation-hardened alloys
BR0209048A (pt) Método de eletrodeposição e pré-tratamento de peças de trabalho de alumìnio
Lindgren et al. Evolution of precipitation in reactor pressure vessel steel welds under neutron irradiation
Decreus et al. Influence of Natural Ageing and Deformation on Precipitation in an Al–C u–L i Alloy
KR880004120A (ko) 내부식성 무정형 표면 합금과 이들의 제조공정
Gong et al. Helium self-trapping and diffusion behaviors in deformed 316L stainless steel exposed to high flux and low energy helium plasma
Liu et al. Helium-hydrogen synergistic effects on swelling in in-situ multiple-ion beams irradiated steels
Morawski et al. Determination of trace elements in the human substantia nigra
Zhang et al. TRIP/TWIP Networks Promoted via Multifunctional Nanoprecipitates‐confined Specified Shear for Achieving Strong‐yet‐Ductile Titanium Alloys
Northover Microstructures of ancient and historic silver
Jaradeh The effect of processing parameters and alloy composition on the microstructure formation and quality of DC cast aluminium alloys
Samaras et al. Stacking fault tetrahedra formation in the neighbourhood of grain boundaries
Sun et al. Modelling of deuterium diffusion and thermal desorption in tungsten exposed to high-flux deuterium plasma
Chen et al. Effect of Ce addition on microstructure and properties of Cu–Zn–Mn–Al–based alloy
Thossatheppitak et al. Microstructure evolution of nickel aluminum bronze alloy during compression at elevated temperatures
Kammerer et al. Impurity diffusion coefficients of Al and Zn in Mg determined from solid-to-solid diffusion couples
Da Silva et al. Formation of Al13Cr2 intermetallic phase by Cr ion implantation
Benarieb et al. Study of decomposition of supersaturated solid solution upon quenching of Al–Mg–Si alloy sheets at different cooling regimes
Jaradeh et al. Method Developed for Quantitative Assessment of Inclusions in Aluminium Billets
Heinisch et al. The effects of low doses of 14 MeV neutrons on the properties of various commercial copper alloys
DE502006003913D1 (de) Passivierungs- und schmiermittel für gold-, silber- und kupferoberflächen und verfahren zu seiner anwendung

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: PAGAR RESTAURACAO.

B08H Application fees: decision cancelled [chapter 8.8 patent gazette]

Free format text: REFERENTE AO DESPACHO PUBLICADO NA RPI 2264 DE 27/05/2014

B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO ARQUIVAMENTO PUBLICADO NA RPI 2429 DE 25/07/2017.