BRPI0413572A - pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior - Google Patents
pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superiorInfo
- Publication number
- BRPI0413572A BRPI0413572A BRPI0413572-5A BRPI0413572A BRPI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A BR PI0413572 A BRPI0413572 A BR PI0413572A
- Authority
- BR
- Brazil
- Prior art keywords
- group
- iii
- quaternary
- semiconductor films
- sym
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910002059 quaternary alloy Inorganic materials 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 4
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Particle Accelerators (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
"PELìCULAS SEMICONDUTORAS DE LIGA QUATERNáRIA DO GRUPO I - III - VI OU SUPERIOR". A presente invenção refere-se a ligas quaternárias ou superiores dos grupos IB, IIIA e VIA. Mais particularmente, esta invenção se relaciona com o grupo de ligas quaternárias ou de cinco elementos dos grupos IB, IIIA e VIA, que são adequadas para uso como filmes semicondutores. Mais especificamente, a invenção se refere a ligas quaternárias ou de cinco elementos, que são substancialmente homogêneas e são caracterizadas por um difratograma de raios X (XRD) tendo um pico principal (112) a um ângulo de 2-<sym> (2-<sym> (112)) de 26 a 28<198>, para radiação de Cu a 40 kV, em que um difratograma de raios X de incidência oblíqua (GIXRD) para um ângulo oblíquo de 0,2 a 10<198> reflete um deslocamento absoluto no ângulo 2-<sym>~ (112)~ inferior a 0,06<198>.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA200306316 | 2003-08-14 | ||
| ZA200402497 | 2004-03-30 | ||
| PCT/IB2004/051459 WO2005017979A2 (en) | 2003-08-14 | 2004-08-13 | Group i-iii-vi quaternary or higher alloy semiconductor films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0413572A true BRPI0413572A (pt) | 2006-10-17 |
Family
ID=34198392
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0413567-9A BRPI0413567A (pt) | 2003-08-14 | 2004-08-13 | método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via |
| BRPI0413572-5A BRPI0413572A (pt) | 2003-08-14 | 2004-08-13 | pelìculas semicondutoras de liga quaternária do grupo i - iii - vi ou superior |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0413567-9A BRPI0413567A (pt) | 2003-08-14 | 2004-08-13 | método para a preparação de pelìculas semicondutoras de liga quaternária ou superior de grupo ib-iiia-via |
Country Status (19)
| Country | Link |
|---|---|
| US (3) | US7744705B2 (pt) |
| EP (3) | EP1654769B2 (pt) |
| JP (2) | JP4994032B2 (pt) |
| KR (2) | KR101027318B1 (pt) |
| AP (2) | AP2180A (pt) |
| AT (1) | ATE510304T2 (pt) |
| AU (2) | AU2004301076B2 (pt) |
| BR (2) | BRPI0413567A (pt) |
| CA (2) | CA2539556C (pt) |
| CY (1) | CY1111940T1 (pt) |
| DE (1) | DE202004021800U1 (pt) |
| DK (1) | DK1654769T4 (pt) |
| EA (2) | EA010171B1 (pt) |
| EG (1) | EG25410A (pt) |
| ES (1) | ES2366888T5 (pt) |
| IL (2) | IL173693A (pt) |
| MX (2) | MXPA06001723A (pt) |
| OA (2) | OA13237A (pt) |
| WO (2) | WO2005017978A2 (pt) |
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| US7057256B2 (en) * | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| CA2636791C (en) * | 2006-01-12 | 2013-02-26 | Heliovolt Corporation | Apparatus for making controlled segregated phase domain structures |
| US8617640B2 (en) * | 2006-06-12 | 2013-12-31 | Nanosolar, Inc. | Thin-film devices formed from solid group IIIA alloy particles |
| DE102006055662B3 (de) * | 2006-11-23 | 2008-06-26 | Gfe Metalle Und Materialien Gmbh | Beschichtungswerkstoff auf Basis einer Kupfer-Indium-Gallium-Legierung, insbesondere zur Herstellung von Sputtertargets, Rohrkathoden und dergleichen |
| WO2008121997A2 (en) * | 2007-03-30 | 2008-10-09 | Craig Leidholm | Formation of photovoltaic absorber layers on foil substrates |
| US8071179B2 (en) | 2007-06-29 | 2011-12-06 | Stion Corporation | Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials |
| WO2009017172A1 (ja) * | 2007-08-02 | 2009-02-05 | Showa Shell Sekiyu K. K. | Cis系薄膜太陽電池の光吸収層の作製方法 |
| US8258001B2 (en) * | 2007-10-26 | 2012-09-04 | Solopower, Inc. | Method and apparatus for forming copper indium gallium chalcogenide layers |
| US8779283B2 (en) * | 2007-11-29 | 2014-07-15 | General Electric Company | Absorber layer for thin film photovoltaics and a solar cell made therefrom |
| JP4620105B2 (ja) * | 2007-11-30 | 2011-01-26 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の光吸収層の製造方法 |
| KR101447113B1 (ko) * | 2008-01-15 | 2014-10-07 | 삼성전자주식회사 | 화합물 반도체 수직 적층 이미지 센서 |
| US20090215224A1 (en) * | 2008-02-21 | 2009-08-27 | Film Solar Tech Inc. | Coating methods and apparatus for making a cigs solar cell |
| DE102008024230A1 (de) * | 2008-05-19 | 2009-11-26 | Avancis Gmbh & Co. Kg | Schichtsystem für Solarzellen |
| EP2144026B1 (de) † | 2008-06-20 | 2016-04-13 | Volker Probst | Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern |
| US7947524B2 (en) * | 2008-09-30 | 2011-05-24 | Stion Corporation | Humidity control and method for thin film photovoltaic materials |
| US20110018103A1 (en) * | 2008-10-02 | 2011-01-27 | Stion Corporation | System and method for transferring substrates in large scale processing of cigs and/or cis devices |
| US8241943B1 (en) | 2009-05-08 | 2012-08-14 | Stion Corporation | Sodium doping method and system for shaped CIGS/CIS based thin film solar cells |
| US8372684B1 (en) * | 2009-05-14 | 2013-02-12 | Stion Corporation | Method and system for selenization in fabricating CIGS/CIS solar cells |
| US8507786B1 (en) | 2009-06-27 | 2013-08-13 | Stion Corporation | Manufacturing method for patterning CIGS/CIS solar cells |
| US8398772B1 (en) | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
| JP5548208B2 (ja) * | 2009-09-04 | 2014-07-16 | 大陽日酸株式会社 | 太陽電池用セレン化水素混合ガスの供給方法及び供給装置 |
| TW201124544A (en) * | 2009-11-24 | 2011-07-16 | Applied Quantum Technology Llc | Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same |
| KR20110060139A (ko) * | 2009-11-30 | 2011-06-08 | 삼성전자주식회사 | 태양 전지 제조 방법 |
| US8859880B2 (en) * | 2010-01-22 | 2014-10-14 | Stion Corporation | Method and structure for tiling industrial thin-film solar devices |
| TWI411121B (zh) * | 2010-03-11 | 2013-10-01 | Ind Tech Res Inst | 光吸收層之製造方法及應用其之太陽能電池結構 |
| JP5837564B2 (ja) | 2010-03-17 | 2015-12-24 | ダウ グローバル テクノロジーズ エルエルシー | カルコゲン含有光吸収性構造体を製造する方法および光起電力装置 |
| US9096930B2 (en) | 2010-03-29 | 2015-08-04 | Stion Corporation | Apparatus for manufacturing thin film photovoltaic devices |
| US8142521B2 (en) * | 2010-03-29 | 2012-03-27 | Stion Corporation | Large scale MOCVD system for thin film photovoltaic devices |
| WO2011132915A2 (ko) * | 2010-04-19 | 2011-10-27 | 한국생산기술연구원 | 태양 전지 제조 방법 |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| KR20130100907A (ko) * | 2010-04-30 | 2013-09-12 | 다우 글로벌 테크놀로지스 엘엘씨 | 칼코게나이드계 태양광발전 셀의 제조 방법 |
| WO2011146115A1 (en) | 2010-05-21 | 2011-11-24 | Heliovolt Corporation | Liquid precursor for deposition of copper selenide and method of preparing the same |
| KR20110128580A (ko) | 2010-05-24 | 2011-11-30 | 삼성전자주식회사 | 태양 전지 제조 방법 |
| WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
| US8461061B2 (en) | 2010-07-23 | 2013-06-11 | Stion Corporation | Quartz boat method and apparatus for thin film thermal treatment |
| WO2012023973A2 (en) | 2010-08-16 | 2012-02-23 | Heliovolt Corporation | Liquid precursor for deposition of indium selenide and method of preparing the same |
| EP2608274A1 (en) * | 2010-08-17 | 2013-06-26 | Toppan Printing Co., Ltd. | Ink for production of compound semiconductor thin film, compound semiconductor thin film produced using the ink, solar cell equipped with the compound semiconductor thin film, and process for production of the solar cell |
| JP2012079997A (ja) * | 2010-10-05 | 2012-04-19 | Kobe Steel Ltd | 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびIn−Cu合金スパッタリングターゲット |
| CN103222063A (zh) * | 2010-11-22 | 2013-07-24 | 京瓷株式会社 | 光电转换装置 |
| JP2012160514A (ja) * | 2011-01-31 | 2012-08-23 | Kyocera Corp | 金属カルコゲナイド層の製造方法および光電変換装置の製造方法 |
| EA020377B1 (ru) * | 2011-05-12 | 2014-10-30 | Общество С Ограниченной Ответственностью "Изовак" | Способ формирования тонких пленок cigs для солнечных батарей и устройство для его реализации |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| JP2013021231A (ja) * | 2011-07-13 | 2013-01-31 | Kyocera Corp | 半導体層の製造方法および光電変換装置の製造方法 |
| WO2013010127A2 (en) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Biometric imaging devices and associated methods |
| WO2013089630A1 (en) * | 2011-12-15 | 2013-06-20 | Midsummer Ab | Recycling of copper indium gallium diselenide |
| US20130344646A1 (en) * | 2011-12-21 | 2013-12-26 | Intermolecular, Inc. | Absorbers for High-Efficiency Thin-Film PV |
| DE102012205378A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Verfahren zur Herstellung von Dünnschichtsolarmodulen sowie nach diesem Verfahren erhältliche Dünnschichtsolarmodule |
| ITFI20120090A1 (it) * | 2012-05-10 | 2013-11-11 | Advanced Res On Pv Tech S R L | Processo per la produzione di celle solari a film sottili |
| US8586457B1 (en) * | 2012-05-17 | 2013-11-19 | Intermolecular, Inc. | Method of fabricating high efficiency CIGS solar cells |
| US9105797B2 (en) | 2012-05-31 | 2015-08-11 | Alliance For Sustainable Energy, Llc | Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se |
| WO2014064823A1 (ja) * | 2012-10-26 | 2014-05-01 | 株式会社日立製作所 | 半導体膜の製造方法、太陽電池及びカルコパイライト化合物 |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US9768015B2 (en) * | 2015-06-11 | 2017-09-19 | Alliance For Sustainable Energy, Llc | Methods of forming CIGS films |
| TW201941444A (zh) * | 2018-02-16 | 2019-10-16 | 澳大利亞商新南創新私人有限公司 | 金剛合金半導體及其用途 |
| KR102015985B1 (ko) * | 2018-04-17 | 2019-08-29 | 한국과학기술연구원 | 태양전지용 cigs 박막의 제조방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555615A (ja) * | 1991-08-28 | 1993-03-05 | Fuji Electric Co Ltd | 薄膜太陽電池の製造方法 |
| US5441897A (en) * | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
| US5356839A (en) * | 1993-04-12 | 1994-10-18 | Midwest Research Institute | Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization |
| US5436204A (en) | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
| US5674555A (en) | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
| JPH1012635A (ja) * | 1996-04-26 | 1998-01-16 | Yazaki Corp | I−iii−vi2系薄膜層の形成方法及びその形成装置 |
| JP2922466B2 (ja) | 1996-08-29 | 1999-07-26 | 時夫 中田 | 薄膜太陽電池 |
| US5985691A (en) | 1997-05-16 | 1999-11-16 | International Solar Electric Technology, Inc. | Method of making compound semiconductor films and making related electronic devices |
| JP4177480B2 (ja) | 1998-05-15 | 2008-11-05 | インターナショナル ソーラー エレクトリック テクノロジー,インコーポレイテッド | 化合物半導体フィルムおよび関連電子装置の製造方法 |
| US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
| AU2249201A (en) | 1999-11-16 | 2001-05-30 | Midwest Research Institute | A novel processing approach towards the formation of thin-film Cu(In,Ga)Se2 |
| US20030008493A1 (en) * | 2001-07-03 | 2003-01-09 | Shyh-Dar Lee | Interconnect structure manufacturing |
-
2004
- 2004-08-13 BR BRPI0413567-9A patent/BRPI0413567A/pt not_active IP Right Cessation
- 2004-08-13 DE DE202004021800U patent/DE202004021800U1/de not_active Expired - Lifetime
- 2004-08-13 EP EP04744786.7A patent/EP1654769B2/en not_active Expired - Lifetime
- 2004-08-13 MX MXPA06001723A patent/MXPA06001723A/es active IP Right Grant
- 2004-08-13 OA OA1200600051A patent/OA13237A/en unknown
- 2004-08-13 MX MXPA06001726A patent/MXPA06001726A/es active IP Right Grant
- 2004-08-13 EP EP10014635A patent/EP2284905A2/en not_active Withdrawn
- 2004-08-13 WO PCT/IB2004/051458 patent/WO2005017978A2/en not_active Ceased
- 2004-08-13 US US10/568,229 patent/US7744705B2/en not_active Expired - Fee Related
- 2004-08-13 AP AP2006003507A patent/AP2180A/xx active
- 2004-08-13 US US10/568,227 patent/US7682939B2/en not_active Expired - Fee Related
- 2004-08-13 JP JP2006523109A patent/JP4994032B2/ja not_active Expired - Fee Related
- 2004-08-13 AU AU2004301076A patent/AU2004301076B2/en not_active Ceased
- 2004-08-13 CA CA2539556A patent/CA2539556C/en not_active Expired - Lifetime
- 2004-08-13 DK DK04744786.7T patent/DK1654769T4/en active
- 2004-08-13 ES ES04744786.7T patent/ES2366888T5/es not_active Expired - Lifetime
- 2004-08-13 EA EA200600406A patent/EA010171B1/ru not_active IP Right Cessation
- 2004-08-13 AU AU2004301075A patent/AU2004301075B2/en not_active Ceased
- 2004-08-13 KR KR1020067003123A patent/KR101027318B1/ko not_active Expired - Fee Related
- 2004-08-13 CA CA2535703A patent/CA2535703C/en not_active Expired - Lifetime
- 2004-08-13 JP JP2006523110A patent/JP4864705B2/ja not_active Expired - Fee Related
- 2004-08-13 BR BRPI0413572-5A patent/BRPI0413572A/pt not_active IP Right Cessation
- 2004-08-13 EP EP04744787A patent/EP1654751A2/en not_active Withdrawn
- 2004-08-13 KR KR1020067003122A patent/KR101004452B1/ko not_active Expired - Fee Related
- 2004-08-13 AT AT04744786T patent/ATE510304T2/de active
- 2004-08-13 EA EA200600407A patent/EA009012B1/ru not_active IP Right Cessation
- 2004-08-13 WO PCT/IB2004/051459 patent/WO2005017979A2/en not_active Ceased
- 2004-08-13 OA OA1200600050A patent/OA13236A/en unknown
- 2004-08-13 AP AP2006003508A patent/AP2149A/xx active
-
2006
- 2006-02-11 EG EGNA2006000140 patent/EG25410A/xx active
- 2006-02-13 IL IL173693A patent/IL173693A/en not_active IP Right Cessation
- 2006-02-13 IL IL173694A patent/IL173694A0/en unknown
-
2010
- 2010-03-19 US US12/728,054 patent/US8735214B2/en not_active Expired - Fee Related
-
2011
- 2011-08-17 CY CY20111100787T patent/CY1111940T1/el unknown
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