BRPI0417807A - material se alimentação de silìcio para produzir lingotes de silìcio multicristalinos ou zona flutuante, solidificados direcionalmente por czochralski, láminas ou fitas de silìcio para a produção de pastilhas de silìcio para células solares pv e método para a produção do mesmo, e, lingote de silìcio multicristalino ou zona flutuante, direcionalmente solidificado por czochralski, ou lámina ou fita de silìcio para produzir pastilhas para células solares - Google Patents

material se alimentação de silìcio para produzir lingotes de silìcio multicristalinos ou zona flutuante, solidificados direcionalmente por czochralski, láminas ou fitas de silìcio para a produção de pastilhas de silìcio para células solares pv e método para a produção do mesmo, e, lingote de silìcio multicristalino ou zona flutuante, direcionalmente solidificado por czochralski, ou lámina ou fita de silìcio para produzir pastilhas para células solares

Info

Publication number
BRPI0417807A
BRPI0417807A BRPI0417807-6A BRPI0417807A BRPI0417807A BR PI0417807 A BRPI0417807 A BR PI0417807A BR PI0417807 A BRPI0417807 A BR PI0417807A BR PI0417807 A BRPI0417807 A BR PI0417807A
Authority
BR
Brazil
Prior art keywords
silicon
solar cell
czochralski
floating zone
feed material
Prior art date
Application number
BRPI0417807-6A
Other languages
English (en)
Inventor
Erik Enebakk
Kenneth Friestad
Ragnar Tronstad
Cyrus Zahedi
Christian Dethloff
Original Assignee
Elkem As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elkem As filed Critical Elkem As
Publication of BRPI0417807A publication Critical patent/BRPI0417807A/pt
Publication of BRPI0417807B1 publication Critical patent/BRPI0417807B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

"MATERIAL DE ALIMENTAçãO DE SILìCIO PARA PRODUZIR LINGOTES DE SILìCIO MULTICRISTALINOS OU ZONA FLUTUANTE, SOLIDIFICADOS DIRECIONALMENTE POR CZOCHRALSKI LáMINAS OU FITAS DE SILìCIO PARA A PRODUçãO DE PASTILHAS DE SILìCIO PARA CéLULAS SOLARES PV E MéTODO PARA A PRODUçãO DO MESMO, E, LINGOTE DE SILìCIO MULTICRISTALINO OU ZONA FLUTUANTE DIRECIONALMENTE SOLIDIFICADO POR CZOCHRALSKI, OU LáMINA OU FITA DE SILìCIO PARA PRODUZIR PASTILHAS PARA CéLULAS SOLARES". A presente invenção está relacionada a material de alimentação de silício para produzir lingotes de silício multicristalinos ou zona flutuante, lâminas ou fitas de silício, para produção de pastilhas de silício para células solares PV onde o material de alimentação de silício contém entre 0,2 e 10 ppma de boro e entre 0,1 e 10 ppma de fósforo distribuídos no material de alimentação. A invenção está relacionada também o lingote de silício direcionalmente solidificado, ou lâmina ou fita, para produzir pastilhas para células solares contendo entre 0,2 e 10 ppma de boro e entre 0,1 e 1O ppma de fósforo distribuídos no lingote, o dito lingote de silício possuindo uma mudança de tipo de tipo-p para tipo-n, ou de tipo-n para tipo-p, em uma posição entre 40 e 99 % da altura do lingote ou da espessura da folha ou da fita, e possuindo um perfil de resistividade descrito por uma curva exponencial que possui um valor de partida entre 0,4 e 10 ohm cm, e onde o valor da resistividade aumenta no sentido do ponto de mudança de tipo. Para finalizar, a invenção está relacionada a um método para produzir material de alimentação de silício para produção de lingotes solidificados direcionalmente de silício, lâminas e fitas, para produção de pastilhas de silício para células solares PV.
BRPI0417807-6A 2003-12-29 2004-01-12 Método para a produção de material de alimentação de silício para produzir lingotes de silício multicristalinos ou zona flutuante, solidificados direcionalmente por Czochralski, material de alimentação de silício,e, lingote de silício, ou lâmina ou fita de silício para produzir pastilhas para células solares BRPI0417807B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20035830A NO333319B1 (no) 2003-12-29 2003-12-29 Silisiummateriale for fremstilling av solceller
NO20035830 2003-12-29
PCT/NO2004/000003 WO2005063621A1 (en) 2003-12-29 2004-01-12 Silicon feedstock for solar cells

Publications (2)

Publication Number Publication Date
BRPI0417807A true BRPI0417807A (pt) 2007-04-10
BRPI0417807B1 BRPI0417807B1 (pt) 2014-09-23

Family

ID=34738092

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0417807-6A BRPI0417807B1 (pt) 2003-12-29 2004-01-12 Método para a produção de material de alimentação de silício para produzir lingotes de silício multicristalinos ou zona flutuante, solidificados direcionalmente por Czochralski, material de alimentação de silício,e, lingote de silício, ou lâmina ou fita de silício para produzir pastilhas para células solares

Country Status (11)

Country Link
US (2) US7381392B2 (pt)
EP (2) EP2607308A1 (pt)
JP (1) JP4580939B2 (pt)
CN (1) CN100457613C (pt)
AU (1) AU2004308879B2 (pt)
BR (1) BRPI0417807B1 (pt)
CA (1) CA2548936C (pt)
EA (1) EA009791B1 (pt)
ES (1) ES2441725T3 (pt)
NO (1) NO333319B1 (pt)
WO (1) WO2005063621A1 (pt)

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NO333757B1 (no) * 2006-12-04 2013-09-09 Elkem Solar As Solceller
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CN101855391B (zh) * 2007-10-03 2014-10-29 希里科材料公司 用于处理硅粉末来获得硅晶体的方法
US7960644B2 (en) * 2007-11-09 2011-06-14 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
US7887633B2 (en) * 2008-06-16 2011-02-15 Calisolar, Inc. Germanium-enriched silicon material for making solar cells
US8758507B2 (en) * 2008-06-16 2014-06-24 Silicor Materials Inc. Germanium enriched silicon material for making solar cells
ITMI20081085A1 (it) * 2008-06-16 2009-12-17 N E D Silicon S P A Metodo per la preparazione di silicio di grado metallurgico di elevata purezza.
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
DE102009008371A1 (de) 2009-02-11 2010-08-12 Schott Solar Ag Integraler Prozeß von Waferherstellung bis Modulfertigung zur Herstellung von Wafern, Solarzellen und Solarmodulen
US20100213643A1 (en) * 2009-02-26 2010-08-26 Gadgil Prasad N Rapid synthesis of polycrystalline silicon sheets for photo-voltaic solar cell manufacturing
WO2010127184A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Quality control process for umg-si feedstock
US20100310445A1 (en) * 2009-04-29 2010-12-09 Calisolar, Inc. Process Control For UMG-Si Material Purification
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
KR101180353B1 (ko) * 2010-07-01 2012-09-06 연세대학교 산학협력단 태양전지용 실리콘제조를 위한 ａｃｉｄ ｌｅａｃｈｉｎｇ을 이용한 ＭＧ-Ｓｉ중 불순물의 정련방법
CN102021650B (zh) * 2010-12-31 2012-06-06 常州天合光能有限公司 一种大型多晶锭的生产方法
CN102191562B (zh) * 2011-04-25 2012-08-29 苏州阿特斯阳光电力科技有限公司 一种n型晶体硅太阳电池的硼扩散方法
FR2978549B1 (fr) * 2011-07-27 2014-03-28 Commissariat Energie Atomique Determination des teneurs en dopants dans un echantillon de silicium compense
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
CN103014839B (zh) * 2013-01-09 2016-07-27 英利集团有限公司 一种p型掺杂剂及其制备方法
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
NO339608B1 (no) 2013-09-09 2017-01-09 Elkem Solar As Multikrystallinske silisiumingoter, silisiummasterlegering, fremgangsmåte for å øke utbyttet av multikrystallinske silisiumingoter for solceller
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Also Published As

Publication number Publication date
EA200601259A1 (ru) 2007-02-27
JP4580939B2 (ja) 2010-11-17
US20080206123A1 (en) 2008-08-28
CN100457613C (zh) 2009-02-04
AU2004308879A1 (en) 2005-07-14
NO333319B1 (no) 2013-05-06
ES2441725T3 (es) 2014-02-06
WO2005063621A1 (en) 2005-07-14
US7381392B2 (en) 2008-06-03
EP1699737A1 (en) 2006-09-13
CA2548936A1 (en) 2005-07-14
EP2607308A1 (en) 2013-06-26
US20070128099A1 (en) 2007-06-07
AU2004308879B2 (en) 2008-01-03
JP2007516928A (ja) 2007-06-28
EA009791B1 (ru) 2008-04-28
NO20035830L (no) 2005-06-30
CA2548936C (en) 2009-08-18
CN1902129A (zh) 2007-01-24
US7931883B2 (en) 2011-04-26
BRPI0417807B1 (pt) 2014-09-23
EP1699737B1 (en) 2014-01-01

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