BRPI0506541A - célula solar com material de ponto quántico epitaxialmente crescido - Google Patents

célula solar com material de ponto quántico epitaxialmente crescido

Info

Publication number
BRPI0506541A
BRPI0506541A BRPI0506541-0A BRPI0506541A BRPI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A
Authority
BR
Brazil
Prior art keywords
solar cell
quantum dot
subcell
substrate
epitaxially grown
Prior art date
Application number
BRPI0506541-0A
Other languages
English (en)
Inventor
Simon Fafard
Original Assignee
Cyrium Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cyrium Technologies Inc filed Critical Cyrium Technologies Inc
Publication of BRPI0506541A publication Critical patent/BRPI0506541A/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

"CéLULA SOLAR COM MATERIAL DE PONTO QUáNTICO EPITAXIALMENTE CRESCIDO". Onde em um primeiro aspecto, a presente invenção fornece uma célula solar monolítica semicondutora multijunção compreendendo diversas subcélulas dispostas em série, as diversas subcélulas tendo pelo menos uma subcélula incluindo um material de ponto quântico autoformado com crescimento epitaxial. Numa incorporação adicional, é fornecida uma célula solar fotovoltaica monolítica semicondutora compreendendo: um substrato de Si; uma camada de transição metamorficamente crescida no substrato de Si, a camada de transição incluindo diversas camadas de GaAs e AlGaAs; e uma primeira subcélula epitaxialmente crescida na camada de transição, a primeira subcélula incluindo um material de ponto quântico autoformado. Em um aspecto adicional, a presente invenção fornece uma célula solar fotovoltaica monolítica semicondutora compreendendo: um substrato de InP; uma primeira subcélula epitaxialmente crescida no substrato, a primeira subcélula incluindo diversas camadas de pontos quânticos de InAs intercaladas com camadas de InGaAs. Em um outro aspecto adicional, a presente invenção fornece o método de fabricação de uma célula solar fotovoltaica monolítica multijunção em um substrato, o método compreendendo a etapa de: formação de subcélula de ponto quântico pelo crescimento epitaxial de um material de ponto quântico autoformado com diversas camadas de ponto quântico intercaladas com barreiras.
BRPI0506541-0A 2004-01-20 2005-01-20 célula solar com material de ponto quántico epitaxialmente crescido BRPI0506541A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53725904P 2004-01-20 2004-01-20
PCT/CA2005/000064 WO2005069387A1 (en) 2004-01-20 2005-01-20 Solar cell with epitaxially grown quantum dot material

Publications (1)

Publication Number Publication Date
BRPI0506541A true BRPI0506541A (pt) 2007-02-27

Family

ID=34794447

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0506541-0A BRPI0506541A (pt) 2004-01-20 2005-01-20 célula solar com material de ponto quántico epitaxialmente crescido

Country Status (8)

Country Link
US (2) US7863516B2 (pt)
EP (1) EP1709690A4 (pt)
JP (2) JP5248782B2 (pt)
CN (1) CN100477289C (pt)
AU (1) AU2005205373B9 (pt)
BR (1) BRPI0506541A (pt)
CA (1) CA2551123A1 (pt)
WO (1) WO2005069387A1 (pt)

Families Citing this family (151)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0118150D0 (en) * 2001-07-25 2001-09-19 Imperial College Thermophotovoltaic device
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US20060043395A1 (en) * 2004-08-26 2006-03-02 National Inst Of Adv Industrial Science And Tech Semiconductor light-emitting element and method of producing the same
DE102005000767A1 (de) 2005-01-04 2006-07-20 Rwe Space Solar Power Gmbh Monolithische Mehrfach-Solarzelle
KR100682928B1 (ko) * 2005-02-03 2007-02-15 삼성전자주식회사 양자점 화합물을 포함하는 에너지 변환막 및 양자점 박막
WO2006097976A1 (ja) * 2005-03-11 2006-09-21 Fujitsu Limited 量子デバイス、その制御方法及びその製造方法
GB0519599D0 (en) * 2005-09-26 2005-11-02 Imp College Innovations Ltd Photovoltaic cells
KR20080091329A (ko) * 2005-12-02 2008-10-10 헬리안토스 베.뷔. 태양광 발전 전지
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
US7414294B2 (en) * 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
JP2009527108A (ja) * 2006-02-13 2009-07-23 ソレクサント・コーポレイション ナノ構造層を備える光起電装置
CA2642169A1 (en) * 2006-02-16 2007-08-30 Solexant Corporation Nanoparticle sensitized nanostructured solar cells
US7800297B2 (en) * 2006-02-17 2010-09-21 Solexant Corp. Nanostructured electroluminescent device and display
CA2723059A1 (en) * 2006-03-22 2007-09-22 Jacques Dussault Apparatus and method for bagging material
WO2008063704A2 (en) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
US20080121271A1 (en) * 2006-05-03 2008-05-29 Rochester Institute Of Technology Multi-junction, photovoltaic devices with nanostructured spectral enhancements and methods thereof
US9634172B1 (en) 2007-09-24 2017-04-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US10381501B2 (en) 2006-06-02 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with multiple metamorphic layers
US20100122724A1 (en) 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Four Junction Inverted Metamorphic Multijunction Solar Cell with Two Metamorphic Layers
US9117966B2 (en) 2007-09-24 2015-08-25 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell
WO2008011152A2 (en) * 2006-07-21 2008-01-24 University Of Massachusetts Longwave infrared photodetector
US7872252B2 (en) * 2006-08-11 2011-01-18 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US8362460B2 (en) 2006-08-11 2013-01-29 Cyrium Technologies Incorporated Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails
US20080072953A1 (en) * 2006-09-27 2008-03-27 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact device
US10700141B2 (en) 2006-09-29 2020-06-30 University Of Florida Research Foundation, Incorporated Method and apparatus for infrared detection and display
US8022292B2 (en) * 2006-10-02 2011-09-20 SolASE Corporation Photovoltaic device employing a resonator cavity
WO2008046147A1 (en) * 2006-10-18 2008-04-24 Newsouth Innovations Pty Limited Up and down conversion using quantum dot arrays
WO2008052067A2 (en) * 2006-10-24 2008-05-02 Applied Quantum Technology Llc Semiconductor grain and oxide layer for photovoltaic cells
US8373060B2 (en) 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US8426722B2 (en) 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US20080110489A1 (en) * 2006-11-14 2008-05-15 Fareed Sepehry-Fard Very High Efficiency Multi-Junction Solar Spectrum Integrator Cells, and the Corresponding System and Method
US7705237B2 (en) * 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
TW200847449A (en) * 2006-12-06 2008-12-01 Solexant Corp Nanophotovoltaic device with improved quantum efficiency
US8158880B1 (en) 2007-01-17 2012-04-17 Aqt Solar, Inc. Thin-film photovoltaic structures including semiconductor grain and oxide layers
US20080178924A1 (en) * 2007-01-30 2008-07-31 Solasta, Inc. Photovoltaic cell and method of making thereof
US7968792B2 (en) * 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
FI20070264L (fi) * 2007-04-04 2008-10-05 Suinno Oy Aktiivinen aurinkokenno ja valmistusmenetelmä
US20100006143A1 (en) * 2007-04-26 2010-01-14 Welser Roger E Solar Cell Devices
US20090114273A1 (en) * 2007-06-13 2009-05-07 University Of Notre Dame Du Lac Nanomaterial scaffolds for electron transport
US20130139877A1 (en) * 2007-09-24 2013-06-06 Emcore Solar Power, Inc. Inverted metamorphic multijunction solar cell with gradation in doping in the window layer
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US20130228216A1 (en) * 2007-09-24 2013-09-05 Emcore Solar Power, Inc. Solar cell with gradation in doping in the window layer
JP2011503893A (ja) * 2007-11-20 2011-01-27 モザイク クリスタルス リミテッド アモルファスｉｉｉ−ｖ族半導体材料及びその製造方法
TW200926430A (en) * 2007-12-06 2009-06-16 Shu-Fen Hu Nano-optoelectronic devices
GB2459651A (en) * 2008-04-28 2009-11-04 Quantasol Ltd Concentrator photovoltaic cell
CN102089856B (zh) * 2008-05-12 2013-02-13 维拉诺瓦大学 太阳能电池以及太阳能电池的制造方法
US20100116942A1 (en) * 2008-06-09 2010-05-13 Fitzgerald Eugene A High-efficiency solar cell structures
US8148632B2 (en) * 2008-07-15 2012-04-03 Honeywell International Inc. Quantum dot solar cell
KR101005803B1 (ko) * 2008-08-11 2011-01-05 한국표준과학연구원 양자점나노선 어레이 태양광 소자 및 그 제조 방법
US8927852B2 (en) * 2008-08-21 2015-01-06 Seagate Technology Llc Photovoltaic device with an up-converting quantum dot layer and absorber
KR101308324B1 (ko) * 2008-09-29 2013-09-17 씬실리콘 코포레이션 단일체로 통합된 태양광 모듈
JP5515278B2 (ja) * 2008-11-06 2014-06-11 日本電気株式会社 光給電装置
TWI396294B (zh) * 2008-11-12 2013-05-11 Academia Sinica 量子點紅外線偵測器裝置
US20100147366A1 (en) * 2008-12-17 2010-06-17 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector
US9018521B1 (en) 2008-12-17 2015-04-28 Solaero Technologies Corp. Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell
CN101752444B (zh) * 2008-12-17 2012-01-18 中国科学院半导体研究所 p-i-n型InGaN量子点太阳能电池结构及其制作方法
US10541349B1 (en) 2008-12-17 2020-01-21 Solaero Technologies Corp. Methods of forming inverted multijunction solar cells with distributed Bragg reflector
TWI427806B (zh) * 2009-01-12 2014-02-21 Epistar Corp 堆疊型太陽能電池
CN106449805B (zh) 2009-02-09 2019-03-12 艾克斯瑟乐普林特有限公司 集中器型光电（cpv）模块、接收器和子接收器及其形成方法
GB2467934B (en) * 2009-02-19 2013-10-30 Iqe Silicon Compounds Ltd Photovoltaic cell
JP5504468B2 (ja) * 2009-02-26 2014-05-28 独立行政法人情報通信研究機構 半導体量子ドット及び同形成方法
JP5543578B2 (ja) * 2009-03-23 2014-07-09 本田技研工業株式会社 原子層堆積法により製造された量子閉じ込め型太陽電池
US20110132445A1 (en) * 2009-05-29 2011-06-09 Pitera Arthur J High-efficiency multi-junction solar cell structures
CN102449775B (zh) * 2009-06-05 2014-07-02 独立行政法人产业技术综合研究所 半导体基板、光电转换器件、半导体基板的制造方法和光电转换器件的制造方法
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
WO2010144421A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods of manufacturing photovoltaic modules having multiple semiconductor layer stacks
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US10505062B2 (en) * 2009-07-09 2019-12-10 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
CN101692464B (zh) * 2009-07-09 2011-09-14 云南师范大学 一种具有纳米棒阵列光耦合元的叠层太阳电池
WO2011011111A1 (en) 2009-07-20 2011-01-27 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
JP5500540B2 (ja) * 2009-07-27 2014-05-21 国立大学法人神戸大学 量子ドット太陽電池
TW201114043A (en) * 2009-10-02 2011-04-16 Epistar Corp A high efficiency solar cell
US20110108102A1 (en) * 2009-11-06 2011-05-12 Honeywell International Inc. Solar cell with enhanced efficiency
US9337360B1 (en) 2009-11-16 2016-05-10 Solar Junction Corporation Non-alloyed contacts for III-V based solar cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
ES2713059T3 (es) 2010-04-09 2019-05-17 Saint Augustin Canada Electric Inc Célula solar de múltiples uniones de tensión adaptada
US9214586B2 (en) 2010-04-30 2015-12-15 Solar Junction Corporation Semiconductor solar cell package
TWI489652B (zh) * 2010-05-12 2015-06-21 晶元光電股份有限公司 半導體磊晶結構及其裝置
US8716701B2 (en) 2010-05-24 2014-05-06 Nanoholdings, Llc Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
US12550457B2 (en) 2010-07-09 2026-02-10 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
WO2012100038A2 (en) * 2011-01-19 2012-07-26 The Research Foundation Of State University Of New York Photovoltaic cells with quantum dots with built-in-charge and methods of making same
EP4007003A1 (en) * 2011-01-26 2022-06-01 Massachusetts Institute Of Technology Transparent photovoltaic cells
US8859892B2 (en) 2011-02-03 2014-10-14 Solar Junction Corporation Integrated semiconductor solar cell package
US8962988B2 (en) 2011-02-03 2015-02-24 Solar Junction Corporation Integrated semiconductor solar cell package
US10283658B2 (en) 2011-02-09 2019-05-07 The Board Of Regents Of The University Of Oklahoma Interband cascade devices
US9166084B2 (en) * 2011-02-09 2015-10-20 Board Of Regents University Of Oklahoma Interband cascade (IC) photovoltaic (PV) architecture for PV devices
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
RU2013148840A (ru) * 2011-04-05 2015-05-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Способ и устройство для интегрирования инфракрасного (ик) фотоэлектрического элемента на тонкопленочный фотоэлектрический элемент
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
WO2012162246A2 (en) * 2011-05-20 2012-11-29 The University Of Chicago Mid-infrared photodetectors
US11677038B2 (en) * 2011-05-28 2023-06-13 Banpil Photonics, Inc. Perpetual energy harvester and method of fabrication
US20120048329A1 (en) * 2011-06-02 2012-03-01 Lalita Manchanda Charge-coupled photovoltaic devices
WO2013003850A2 (en) 2011-06-30 2013-01-03 University Of Florida Researchfoundation, Inc. A method and apparatus for detecting infrared radiation with gain
EP2745330B1 (en) * 2011-08-29 2020-06-03 IQE Plc. Photovoltaic device
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
CN102437227A (zh) * 2011-12-14 2012-05-02 中国东方电气集团有限公司 一种含有InAs量子点结构的多结太阳电池
US9070811B2 (en) 2012-01-27 2015-06-30 PLANT PV, Inc. Multi-crystalline II-VI based multijunction solar cells and modules
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
KR101294368B1 (ko) 2012-05-09 2013-08-08 한국광기술원 실리콘기판을 이용한 적층형 고효율 태양전지 생성 방법
US9065006B2 (en) 2012-05-11 2015-06-23 Mtpv Power Corporation Lateral photovoltaic device for near field use
CN102751389A (zh) * 2012-07-19 2012-10-24 厦门市三安光电科技有限公司 一种高效多结太阳能电池的制备方法
US9373741B2 (en) 2012-08-15 2016-06-21 International Business Machines Corporation Heterostructure germanium tandem junction solar cell
US9472702B1 (en) * 2012-11-19 2016-10-18 Sandia Corporation Photovoltaic cell with nano-patterned substrate
CN102983203A (zh) * 2012-11-28 2013-03-20 中国科学院苏州纳米技术与纳米仿生研究所 三结级联太阳能电池及其制作方法
US9306106B2 (en) 2012-12-18 2016-04-05 International Business Machines Corporation Monolithic integration of heterojunction solar cells
US8785233B2 (en) * 2012-12-19 2014-07-22 Sunpower Corporation Solar cell emitter region fabrication using silicon nano-particles
US9640698B2 (en) * 2013-03-15 2017-05-02 Banpil Photonics, Inc. Energy harvesting devices and method of fabrication thereof
US20140265998A1 (en) * 2013-03-15 2014-09-18 Sandia Corporation Power transfer for mobile electronic devices
WO2015047125A1 (ru) * 2013-09-26 2015-04-02 Общество с ограниченной ответственностью "Солар Дотс" Фотопреобразователь с квантовыми точками
EP3100308B1 (en) * 2014-01-31 2018-05-23 The Regents of The University of California Electric field control element for phonons
WO2015120169A1 (en) 2014-02-05 2015-08-13 Solar Junction Corporation Monolithic multijunction power converter
US20150295114A1 (en) * 2014-04-11 2015-10-15 Sempruis, Inc. Multi-junction power converter with photon recycling
RU2017102273A (ru) * 2014-07-25 2018-08-27 Общество с ограниченной ответственностью "Солар Дотс" Каскадный фотопреобразователь с квантоворазмерными структурами
CN104300015B (zh) * 2014-10-13 2017-01-18 北京工业大学 AlGaAs/GaInAs/Ge连续光谱太阳能电池
CN104465846B (zh) * 2014-11-28 2017-01-18 瑞德兴阳新能源技术有限公司 一种含量子结构的双面生长四结太阳电池
US10749058B2 (en) 2015-06-11 2020-08-18 University Of Florida Research Foundation, Incorporated Monodisperse, IR-absorbing nanoparticles and related methods and devices
JP6616114B2 (ja) * 2015-07-24 2019-12-04 京セラ株式会社 光電変換装置
US12501736B2 (en) 2015-08-17 2025-12-16 Solaero Technologies Corp Method of fabricating metamorphic multijunction solar cells for space applications
US11563133B1 (en) 2015-08-17 2023-01-24 SolAero Techologies Corp. Method of fabricating multijunction solar cells for space applications
WO2017059068A1 (en) * 2015-09-29 2017-04-06 Semprius, Inc. Multi-junction photovoltaic micro-cell architectures for energy harvesting and/or laser power conversion
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
US10361330B2 (en) 2015-10-19 2019-07-23 Solaero Technologies Corp. Multijunction solar cell assemblies for space applications
US9985161B2 (en) 2016-08-26 2018-05-29 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
US10403778B2 (en) * 2015-10-19 2019-09-03 Solaero Technologies Corp. Multijunction solar cell assembly for space applications
US10270000B2 (en) 2015-10-19 2019-04-23 Solaero Technologies Corp. Multijunction metamorphic solar cell assembly for space applications
US10256359B2 (en) 2015-10-19 2019-04-09 Solaero Technologies Corp. Lattice matched multijunction solar cell assemblies for space applications
US9935209B2 (en) 2016-01-28 2018-04-03 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
DE102015016047A1 (de) * 2015-12-10 2017-06-14 Azur Space Solar Power Gmbh Mehrfach-Solarzelle
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
SG11201806579QA (en) 2016-02-08 2018-09-27 Mtpv Power Corp Radiative micron-gap thermophotovoltaic system transparent emitter
US10263134B1 (en) 2016-05-25 2019-04-16 Solaero Technologies Corp. Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell
US9680035B1 (en) 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
US10700230B1 (en) 2016-10-14 2020-06-30 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
US12249667B2 (en) 2017-08-18 2025-03-11 Solaero Technologies Corp. Space vehicles including multijunction metamorphic solar cells
US10636926B1 (en) 2016-12-12 2020-04-28 Solaero Technologies Corp. Distributed BRAGG reflector structures in multijunction solar cells
CN107046027B (zh) * 2016-12-30 2019-07-12 中国电子科技集团公司第十八研究所 钙钛矿和砷化镓异质集成的太阳能电池制造方法及电池
JP2018182985A (ja) * 2017-04-19 2018-11-15 ビッグステップ株式会社 光発電装置
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
CN112038425B (zh) * 2019-06-03 2024-04-30 中国科学院苏州纳米技术与纳米仿生研究所 一种多结叠层激光光伏电池
EP3799136B1 (de) * 2019-09-27 2023-02-01 AZUR SPACE Solar Power GmbH Monolithische mehrfachsolarzelle mit genau vier teilzellen
IL273118B (en) 2020-03-05 2022-03-01 Allen Richter Self-adaptive electromagnetic radiation guide
CN112802920B (zh) * 2021-02-25 2022-11-11 中国电子科技集团公司第十八研究所 一种正向失配六结太阳电池

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4419530A (en) 1982-02-11 1983-12-06 Energy Conversion Devices, Inc. Solar cell and method for producing same
US4575577A (en) 1983-05-27 1986-03-11 Chevron Research Company Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary transition layer
US4688068A (en) 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4667059A (en) 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
US4694115A (en) 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
JP2754599B2 (ja) * 1988-10-05 1998-05-20 株式会社デンソー 半導体装置
JPH02218174A (ja) 1989-02-17 1990-08-30 Mitsubishi Electric Corp 光電変換半導体装置
US5019177A (en) 1989-11-03 1991-05-28 The United States Of America As Represented By The United States Department Of Energy Monolithic tandem solar cell
JP2512188B2 (ja) * 1990-02-27 1996-07-03 三菱電機株式会社 Ｓｉ基板上化合物半導体光電変換素子
JPH03285363A (ja) * 1990-04-02 1991-12-16 Hitachi Cable Ltd シリーズ積層型太陽電池
US5223043A (en) 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5330585A (en) 1992-10-30 1994-07-19 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
US5407491A (en) 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US5405453A (en) 1993-11-08 1995-04-11 Applied Solar Energy Corporation High efficiency multi-junction solar cell
US5614435A (en) * 1994-10-27 1997-03-25 The Regents Of The University Of California Quantum dot fabrication process using strained epitaxial growth
US5851310A (en) * 1995-12-06 1998-12-22 University Of Houston Strained quantum well photovoltaic energy converter
US6147296A (en) * 1995-12-06 2000-11-14 University Of Houston Multi-quantum well tandem solar cell
JP3877348B2 (ja) * 1996-02-28 2007-02-07 沖電気工業株式会社 太陽電池
JPH1187689A (ja) * 1997-09-04 1999-03-30 Fujitsu Ltd 量子ドットの製造方法
JPH11214726A (ja) * 1998-01-23 1999-08-06 Sumitomo Electric Ind Ltd 積層型太陽電池
AU727351B2 (en) * 1998-03-19 2000-12-14 Toyota Jidosha Kabushiki Kaisha Solar cell
US6166320A (en) * 1998-03-19 2000-12-26 Toyota Jidosha Kabushiki Kaisha Tandem solar cell
CA2268997C (en) * 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same
JP3829153B2 (ja) * 1998-05-20 2006-10-04 富士通株式会社 光半導体装置
KR100352368B1 (ko) 1998-09-04 2002-09-11 캐논 가부시끼가이샤 반도체기판 및 이것의 제조방법
JP2000349393A (ja) * 1999-03-26 2000-12-15 Fuji Xerox Co Ltd 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ
US6252287B1 (en) * 1999-05-19 2001-06-26 Sandia Corporation InGaAsN/GaAs heterojunction for multi-junction solar cells
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
JP2001044453A (ja) * 1999-07-30 2001-02-16 Fujitsu Ltd 光検出素子
US6340788B1 (en) * 1999-12-02 2002-01-22 Hughes Electronics Corporation Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
JP4064592B2 (ja) * 2000-02-14 2008-03-19 シャープ株式会社 光電変換装置
JP2001308354A (ja) * 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
WO2002009188A1 (en) * 2000-06-27 2002-01-31 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
AU2002246489A1 (en) * 2000-10-06 2002-07-30 Science And Technology Corporation @ Unm Quantum dot lasers
JP4662616B2 (ja) * 2000-10-18 2011-03-30 パナソニック株式会社 太陽電池
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
DE10139509A1 (de) * 2000-12-08 2002-06-27 Daimler Chrysler Ag Silizium Germanium Solarzelle mit hohem Wirkungsgrad
US7180100B2 (en) * 2001-03-27 2007-02-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
US6694115B2 (en) * 2002-01-29 2004-02-17 Hewlett-Packard Development Company, L.P. Altering print configurations for authorized users
US6951819B2 (en) * 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US20050247339A1 (en) * 2004-05-10 2005-11-10 Imperial College Innovations Limited Method of operating a solar cell
US10374120B2 (en) * 2005-02-18 2019-08-06 Koninklijke Philips N.V. High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

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