BRPI0508290A - estruturas de quantum pontual composta - Google Patents

estruturas de quantum pontual composta

Info

Publication number
BRPI0508290A
BRPI0508290A BRPI0508290-0A BRPI0508290A BRPI0508290A BR PI0508290 A BRPI0508290 A BR PI0508290A BR PI0508290 A BRPI0508290 A BR PI0508290A BR PI0508290 A BRPI0508290 A BR PI0508290A
Authority
BR
Brazil
Prior art keywords
conductive layer
dimensions
structures
quantum
point quantum
Prior art date
Application number
BRPI0508290-0A
Other languages
English (en)
Inventor
Michael G Burt
Original Assignee
Trackdale Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trackdale Ltd filed Critical Trackdale Ltd
Publication of BRPI0508290A publication Critical patent/BRPI0508290A/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/169—Nanoparticles, e.g. doped nanoparticles acting as a gain material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

ESTRUTURAS DE QUANTUM PONTUAL COMPOSTA. Uma estrutura de quantum pontual composta 4 compreende uma região do confinamento do portador da carga, tal como, um quantum pontual 2, uma barreira 5 e uma camada eletricamente condutora 3. Esta estrutura permite que as dimensões da camada condutora 3 sejam substancialmente independente do tamanho da região 2, de modo que as dimensões da região 2 possam assim ser selecionadas a fim de conseguir propriedades óticas desejadas, quando a camada eletricamente condutora 3 puder ser da espessura suficiente para se assegurar de que possa confiantemente ser depositada. A estrutura pode também incluir uma camada de proteção 7 (Figura 4) para compensar qualquer falta de afinidade química entre a barreira 5 e a camada condutora 3. Um ajuntamento de tais estruturas seja fornecido no qual os quantum pontuais 1 tenham vários raios, mas as dimensões das camadas condutoras 3 e as dimensões totais das estruturas são substancialmente uniformes, por exemplo, para o uso em um amplificador configurado para amplificar a luz de vários comprimentos de ondas.
BRPI0508290-0A 2004-02-27 2005-02-28 estruturas de quantum pontual composta BRPI0508290A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0404442.6A GB0404442D0 (en) 2004-02-27 2004-02-27 Composite quantum dot structures
PCT/EP2005/050840 WO2005083792A2 (en) 2004-02-27 2005-02-28 Composite quantum dot structures

Publications (1)

Publication Number Publication Date
BRPI0508290A true BRPI0508290A (pt) 2007-08-07

Family

ID=32051030

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0508290-0A BRPI0508290A (pt) 2004-02-27 2005-02-28 estruturas de quantum pontual composta

Country Status (12)

Country Link
US (1) US20080230764A1 (pt)
EP (1) EP1719182A2 (pt)
JP (1) JP2007525031A (pt)
KR (1) KR20070007791A (pt)
CN (1) CN1922736A (pt)
AU (1) AU2005217530A1 (pt)
BR (1) BRPI0508290A (pt)
CA (1) CA2557494A1 (pt)
GB (2) GB0404442D0 (pt)
IL (1) IL177364A0 (pt)
RU (1) RU2006134277A (pt)
WO (1) WO2005083792A2 (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687349B2 (en) * 2006-10-30 2010-03-30 Atmel Corporation Growth of silicon nanodots having a metallic coating using gaseous precursors
FR2927176B1 (fr) * 2008-02-01 2010-05-14 Alcatel Lucent Guide optique dope par des ions terres rares et dispositif optique le comprenant.
JP4538516B2 (ja) * 2008-08-08 2010-09-08 防衛省技術研究本部長 光半導体装置
US8965208B2 (en) * 2009-05-22 2015-02-24 Kotura, Inc. Multi-channel optical device
US20110081109A1 (en) * 2009-10-05 2011-04-07 Thylen Lars H Nanoparticle array photonic waveguide
CN103415925A (zh) * 2010-11-03 2013-11-27 L·皮尔·德罗什蒙 具有单片集成的量子点器件的半导体芯片载体及其制造方法
KR101757570B1 (ko) 2013-03-13 2017-07-12 각코호진 오키나와가가쿠기쥬츠다이가쿠인 다이가쿠가쿠엔 비정질 반도체 양자점의 금속 유도 나노결정화
CN105511150A (zh) * 2016-02-01 2016-04-20 京东方科技集团股份有限公司 一种量子棒、量子棒制作方法和显示面板
CN108962984B (zh) * 2018-06-11 2021-05-11 东南大学 一种具有量子点结构的绝缘栅双极型晶体管
KR20220081946A (ko) 2020-12-09 2022-06-16 삼성전자주식회사 컬러필터 및 이를 포함하는 소자
US12078827B2 (en) 2020-12-09 2024-09-03 Samsung Electronics Co., Ltd. Color filters and devices including the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023139A (en) * 1989-04-04 1991-06-11 Research Corporation Technologies, Inc. Nonlinear optical materials
JPH05501927A (ja) * 1989-10-18 1993-04-08 リサーチ　コーポレーション　テクノロジーズ　インコーポレーテッド 光感受性記録媒体
US6344272B1 (en) * 1997-03-12 2002-02-05 Wm. Marsh Rice University Metal nanoshells
US7144627B2 (en) * 1997-03-12 2006-12-05 William Marsh Rice University Multi-layer nanoshells comprising a metallic or conducting shell
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US7319709B2 (en) * 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms

Also Published As

Publication number Publication date
WO2005083792A2 (en) 2005-09-09
GB0404442D0 (en) 2004-03-31
IL177364A0 (en) 2006-12-10
RU2006134277A (ru) 2008-04-10
WO2005083792A3 (en) 2005-10-27
AU2005217530A1 (en) 2005-09-09
JP2007525031A (ja) 2007-08-30
KR20070007791A (ko) 2007-01-16
GB0504082D0 (en) 2005-04-06
CN1922736A (zh) 2007-02-28
CA2557494A1 (en) 2005-09-09
EP1719182A2 (en) 2006-11-08
US20080230764A1 (en) 2008-09-25

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A E 6A ANUIDADE(S).

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2099 DE 29/03/2011.