BRPI0508314A - processo para produzir silìcio - Google Patents

processo para produzir silìcio

Info

Publication number
BRPI0508314A
BRPI0508314A BRPI0508314-1A BRPI0508314A BRPI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A
Authority
BR
Brazil
Prior art keywords
produce silicon
silicon
monochlorosilane
chlorosilanes
monosilane
Prior art date
Application number
BRPI0508314-1A
Other languages
English (en)
Inventor
Tim Poepken
Raymund Sonnenschein
Original Assignee
Degussa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Degussa filed Critical Degussa
Publication of BRPI0508314A publication Critical patent/BRPI0508314A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROCESSO PARA PRODUZIR SILìCIO A presente invenção refere-se a um processo para produzir silício pela decomposição térmica de uma mistura gasosa compreendendo monossilano, monoclorossilano e, se desejado, outros clorossilanos, por exemplo diclorossilano.
BRPI0508314-1A 2004-03-02 2005-01-06 processo para produzir silìcio BRPI0508314A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004010055A DE102004010055A1 (de) 2004-03-02 2004-03-02 Verfahren zur Herstellung von Silicium
PCT/EP2005/050043 WO2005085133A1 (en) 2004-03-02 2005-01-06 Process for producing silicon

Publications (1)

Publication Number Publication Date
BRPI0508314A true BRPI0508314A (pt) 2007-07-24

Family

ID=34877232

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0508314-1A BRPI0508314A (pt) 2004-03-02 2005-01-06 processo para produzir silìcio

Country Status (11)

Country Link
US (1) US7632478B2 (pt)
EP (1) EP1720800B1 (pt)
JP (1) JP4778504B2 (pt)
KR (1) KR100981263B1 (pt)
CN (1) CN100556804C (pt)
BR (1) BRPI0508314A (pt)
DE (2) DE102004010055A1 (pt)
ES (1) ES2329590T3 (pt)
RU (1) RU2368568C2 (pt)
UA (1) UA91973C2 (pt)
WO (1) WO2005085133A1 (pt)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004008442A1 (de) * 2004-02-19 2005-09-15 Degussa Ag Siliciumverbindungen für die Erzeugung von SIO2-haltigen Isolierschichten auf Chips
US7850938B2 (en) * 2004-03-17 2010-12-14 Denki Kagaku Kogyo Kabushiki Kaisha Silicon particles, silicon particle superlattice and method for producing the same
DE102005046105B3 (de) * 2005-09-27 2007-04-26 Degussa Gmbh Verfahren zur Herstellung von Monosilan
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
DE102007050199A1 (de) * 2007-10-20 2009-04-23 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus anorganischen Silanen
DE102008000052A1 (de) * 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
IT1391068B1 (it) * 2008-10-20 2011-11-18 Sunlit S R L Metodo per la produzione di silicio policristallino
US8168123B2 (en) 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
JP2012523963A (ja) 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション ケイ化物がコーティングされた金属表面を有する反応器
TWI454309B (zh) 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US8507051B2 (en) * 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
JP5655429B2 (ja) 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
JP5627703B2 (ja) * 2009-11-18 2014-11-19 アールイーシー シリコン インコーポレイテッド 流動床反応器
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120148728A1 (en) * 2010-12-09 2012-06-14 Siliken Sa Methods and apparatus for the production of high purity silicon
KR101873923B1 (ko) * 2010-12-20 2018-08-02 썬에디슨, 인크. 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조
US8226920B1 (en) 2011-01-07 2012-07-24 Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
DE102011004058A1 (de) * 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
EP3543211B1 (en) 2016-11-16 2022-04-20 IHI Corporation Method for hydrolyzing chlorosilane polymers
EP3659964A1 (en) 2018-11-28 2020-06-03 Hysilabs, SAS Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds
KR102712596B1 (ko) * 2022-08-29 2024-09-30 오씨아이 주식회사 실리콘 마이크로 입자의 제조방법 및 이에 의해 제조된 실리콘 마이크로 입자

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234668A (en) * 1975-09-11 1977-03-16 Kokusai Electric Co Ltd Gaseous phase growing process of semiconductor
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4684513A (en) * 1982-11-05 1987-08-04 Union Carbide Corporation Zone heating for fluidized bed silane pyrolysis
US4818495A (en) * 1982-11-05 1989-04-04 Union Carbide Corporation Reactor for fluidized bed silane decomposition
US4559219A (en) * 1984-04-02 1985-12-17 General Electric Company Reducing powder formation in the production of high-purity silicon
JPH0829929B2 (ja) * 1987-06-01 1996-03-27 三井東圧化学株式会社 ハロゲン化水素化シランの製造方法
US4906441A (en) * 1987-11-25 1990-03-06 Union Carbide Chemicals And Plastics Company Inc. Fluidized bed with heated liners and a method for its use
DE3842099A1 (de) 1987-12-14 1989-06-22 Union Carbide Corp Wirbelschichtreaktor zur herstellung von polykristallinem silicium
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
DE4127819A1 (de) 1991-08-22 1993-02-25 Wacker Chemitronic Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium
US5478396A (en) * 1992-09-28 1995-12-26 Advanced Silicon Materials, Inc. Production of high-purity polycrystalline silicon rod for semiconductor applications
JPH06127924A (ja) * 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコンの製造方法
US6090360A (en) * 1995-02-15 2000-07-18 Dow Corning Corporation Method for recovering particulate silicon from a by-product stream
DE19654516C1 (de) * 1996-12-27 1998-10-01 Degussa Verfahren zur Auftrennung des Produktgasgemisches der katalytischen Synthese von Methylmercaptan
CN1207192C (zh) * 1997-12-25 2005-06-22 新日本制铁株式会社 高纯硅的制造方法及装置
JP2001064774A (ja) * 1999-08-27 2001-03-13 Tokuyama Corp シリコン系薄膜製造用原料
RU2155158C1 (ru) * 1999-10-07 2000-08-27 Институт химии высокочистых веществ РАН Способ получения моноизотопного кремния si28
ES2350591T3 (es) * 2000-05-11 2011-01-25 Tokuyama Corporation Aparato para la producción de silicio policristalino.
DE10034493C1 (de) * 2000-07-15 2001-11-29 Degussa Verfahren zur Herstellung von Organosilylalkylpolysulfanen
DE10057481A1 (de) * 2000-11-20 2002-05-23 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
JP4064918B2 (ja) * 2001-06-06 2008-03-19 株式会社トクヤマ シリコンの製造方法
RU2222649C2 (ru) * 2001-12-13 2004-01-27 Добровенский Владимир Вениаминович Способ получения исходного поликристаллического кремния в виде широких пластин с малой концентрацией фоновых примесей
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
DE10330022A1 (de) * 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
DE10331952A1 (de) * 2003-07-15 2005-02-10 Degussa Ag Vorrichtung und Verfahren zur diskontinuierlichen Polykondensation
DE102004008042A1 (de) * 2004-02-19 2005-09-01 Goldschmidt Gmbh Verfahren zur Herstellung von Aminosäureestern und deren Säure-Additions-Salzen
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium

Also Published As

Publication number Publication date
RU2368568C2 (ru) 2009-09-27
DE102004010055A1 (de) 2005-09-22
KR20070001165A (ko) 2007-01-03
US20070148075A1 (en) 2007-06-28
US7632478B2 (en) 2009-12-15
RU2006134502A (ru) 2008-04-10
KR100981263B1 (ko) 2010-09-10
WO2005085133A1 (en) 2005-09-15
JP4778504B2 (ja) 2011-09-21
CN1926061A (zh) 2007-03-07
EP1720800B1 (en) 2009-07-22
ES2329590T3 (es) 2009-11-27
UA91973C2 (ru) 2010-09-27
CN100556804C (zh) 2009-11-04
JP2007526203A (ja) 2007-09-13
EP1720800A1 (en) 2006-11-15
DE602005015554D1 (de) 2009-09-03

Similar Documents

Publication Publication Date Title
UA91973C2 (ru) Способ получения кремния
EA201100568A1 (ru) Способ получения карбида кремния высокой чистоты из углеводородов и оксида кремния с помощью прокаливания
IL187010A (en) A strong color diamond
ATE410396T1 (de) Verfahren zur herstellung von silicium aus halogensilanen
ITRM20040570A1 (it) Procedimento e impianto di purificazione di triclorosilano e di tetracloruro di silicio.
UA101400C2 (ru) Реактор с псевдоожиженным слоем, его применение и способ энергонезависимого гидрирования хлорсиланов
UA104851C2 (uk) Каталізатор і спосіб дисмутації галогенсиланів з вмістом водню
EA201070774A1 (ru) Цеолит типа lsx с контролируемой гранулометрией
TW200716516A (en) Methods of purifying tigecycline
MX2010008779A (es) Sistemas de productos estables en almacenamiento para formulaciones de pre-mezcla.
WO2010054988A3 (en) Process for preparing cyclic diamines
MY157441A (en) Organophosphorus compounds based on tetraphenol (tp)-substituted structures
MY180271A (en) Process for preparing higher halosilanes and hydridosilanes
SG164388A1 (en) Method for producing diisocyanates
TW200716514A (en) Tigecycline and methods of preparing 9-nitrominocycline
ATE555172T1 (de) Silangemisch
IL248539A0 (en) Preparation of stansoporfin with a high degree of purification on a large scale
ATE283239T1 (de) Verfahren zur herstellung von chlorsilanen
MY159550A (en) Process and apparatuses for preparing ultrapure silicon
TW200730674A (en) New diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
TW200703473A (en) Doping mixture for doping semiconductors
DE50302199D1 (de) Aluminium-haltige fällungskieselsäure mit einstellbarem bet/ctab-verhältnis
WO2009002538A3 (en) Amorphous erlotinib, processes for the preparation thereof, and processes to prepare additional forms of erlotinib
TW200704589A (en) Process for the production of hydrochlorosilanes
WO2006130500A8 (en) Tigecycline and methods of preparing 9-aminominocycline

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE(S).

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2099 DE 29/03/2011.