BRPI0508314A - processo para produzir silìcio - Google Patents

processo para produzir silìcio

Info

Publication number
BRPI0508314A
BRPI0508314A BRPI0508314-1A BRPI0508314A BRPI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A BR PI0508314 A BRPI0508314 A BR PI0508314A
Authority
BR
Brazil
Prior art keywords
produce silicon
silicon
monochlorosilane
chlorosilanes
monosilane
Prior art date
Application number
BRPI0508314-1A
Other languages
English (en)
Inventor
Tim Poepken
Raymund Sonnenschein
Original Assignee
Degussa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Degussa filed Critical Degussa
Publication of BRPI0508314A publication Critical patent/BRPI0508314A/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PROCESSO PARA PRODUZIR SILìCIO A presente invenção refere-se a um processo para produzir silício pela decomposição térmica de uma mistura gasosa compreendendo monossilano, monoclorossilano e, se desejado, outros clorossilanos, por exemplo diclorossilano.
BRPI0508314-1A 2004-03-02 2005-01-06 processo para produzir silìcio BRPI0508314A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004010055A DE102004010055A1 (de) 2004-03-02 2004-03-02 Verfahren zur Herstellung von Silicium
PCT/EP2005/050043 WO2005085133A1 (en) 2004-03-02 2005-01-06 Process for producing silicon

Publications (1)

Publication Number Publication Date
BRPI0508314A true BRPI0508314A (pt) 2007-07-24

Family

ID=34877232

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0508314-1A BRPI0508314A (pt) 2004-03-02 2005-01-06 processo para produzir silìcio

Country Status (11)

Country Link
US (1) US7632478B2 (pt)
EP (1) EP1720800B1 (pt)
JP (1) JP4778504B2 (pt)
KR (1) KR100981263B1 (pt)
CN (1) CN100556804C (pt)
BR (1) BRPI0508314A (pt)
DE (2) DE102004010055A1 (pt)
ES (1) ES2329590T3 (pt)
RU (1) RU2368568C2 (pt)
UA (1) UA91973C2 (pt)
WO (1) WO2005085133A1 (pt)

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WO2005090234A1 (ja) * 2004-03-17 2005-09-29 Denki Kagaku Kogyo Kabushiki Kaisha シリコン粒子、シリコン粒子超格子及びこれらの製造方法
DE102005046105B3 (de) * 2005-09-27 2007-04-26 Degussa Gmbh Verfahren zur Herstellung von Monosilan
DE102006003464A1 (de) * 2006-01-25 2007-07-26 Degussa Gmbh Verfahren zur Erzeugung einer Siliciumschicht auf einer Substratoberfläche durch Gasphasenabscheidung
DE102007050199A1 (de) * 2007-10-20 2009-04-23 Evonik Degussa Gmbh Entfernung von Fremdmetallen aus anorganischen Silanen
DE102008000052A1 (de) * 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
CN103058194B (zh) 2008-09-16 2015-02-25 储晞 生产高纯颗粒硅的反应器
IT1391068B1 (it) * 2008-10-20 2011-11-18 Sunlit S R L Metodo per la produzione di silicio policristallino
US8168123B2 (en) 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
TWI454309B (zh) 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US8425855B2 (en) 2009-04-20 2013-04-23 Robert Froehlich Reactor with silicide-coated metal surfaces
KR101708058B1 (ko) * 2009-07-15 2017-02-17 미쓰비시 마테리알 가부시키가이샤 다결정 실리콘의 제조 방법, 다결정 실리콘의 제조 장치, 및 다결정 실리콘
JP5655429B2 (ja) * 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
US9023425B2 (en) 2009-11-18 2015-05-05 Rec Silicon Inc Fluid bed reactor
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120148728A1 (en) * 2010-12-09 2012-06-14 Siliken Sa Methods and apparatus for the production of high purity silicon
WO2012087795A1 (en) * 2010-12-20 2012-06-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations
US8226920B1 (en) 2011-01-07 2012-07-24 Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by venting the system with an inert gas
DE102011004058A1 (de) 2011-02-14 2012-08-16 Evonik Degussa Gmbh Monochlorsilan, Verfahren und Vorrichtung zu dessen Herstellung
KR101427726B1 (ko) * 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
RU2722027C1 (ru) * 2016-11-16 2020-05-26 АйЭйчАй КОРПОРЕЙШН Способ стабилизации хлорсиланового полимера
EP3659964A1 (en) 2018-11-28 2020-06-03 Hysilabs, SAS Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds
KR102712596B1 (ko) * 2022-08-29 2024-09-30 오씨아이 주식회사 실리콘 마이크로 입자의 제조방법 및 이에 의해 제조된 실리콘 마이크로 입자

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DE10330022A1 (de) 2003-07-03 2005-01-20 Degussa Ag Verfahren zur Herstellung von Iow-k dielektrischen Filmen
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Also Published As

Publication number Publication date
ES2329590T3 (es) 2009-11-27
RU2368568C2 (ru) 2009-09-27
KR100981263B1 (ko) 2010-09-10
WO2005085133A1 (en) 2005-09-15
JP2007526203A (ja) 2007-09-13
US7632478B2 (en) 2009-12-15
DE102004010055A1 (de) 2005-09-22
EP1720800B1 (en) 2009-07-22
RU2006134502A (ru) 2008-04-10
KR20070001165A (ko) 2007-01-03
DE602005015554D1 (de) 2009-09-03
UA91973C2 (ru) 2010-09-27
CN100556804C (zh) 2009-11-04
US20070148075A1 (en) 2007-06-28
EP1720800A1 (en) 2006-11-15
CN1926061A (zh) 2007-03-07
JP4778504B2 (ja) 2011-09-21

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 6A ANUIDADE(S).

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2099 DE 29/03/2011.