BRPI0515132A - alvos para faiscamento de molibdênio - Google Patents
alvos para faiscamento de molibdênioInfo
- Publication number
- BRPI0515132A BRPI0515132A BRPI0515132-5A BRPI0515132A BRPI0515132A BR PI0515132 A BRPI0515132 A BR PI0515132A BR PI0515132 A BRPI0515132 A BR PI0515132A BR PI0515132 A BRPI0515132 A BR PI0515132A
- Authority
- BR
- Brazil
- Prior art keywords
- targets
- molybdenum
- sparking
- light emitting
- emitting diodes
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/16—Both compacting and sintering in successive or repeated steps
- B22F3/162—Machining, working after consolidation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment
- C21D8/02—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
- C21D8/0221—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the working steps
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment
- C21D8/02—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
- C21D8/0247—Modifying the physical properties of ferrous metals or ferrous alloys by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the heat treatment
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3471—Introduction of auxiliary energy into the plasma
- C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
- B22F2003/248—Thermal after-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/20—Refractory metals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Fluid Mechanics (AREA)
- Photovoltaic Devices (AREA)
Abstract
ALVOS PARA FAISCAMENTO DE MOLIBDêNIO. A presente invenção refere-se a alvos para faiscamento de molibdênio e sinterização caracterizados por não terem nenhuma ou uma mínima rugosidade de textura ou gradiente através da espessura. Os alvos de faiscamento de molibdênio tendo um tamanho de grão uniforme fino são de alta pureza e podem ser microligados para desempenho aperfeiçoado. Os alvos para faiscamento podem ser discos redondos, quadrados, retangulares ou tubulares e podem ser faiscados para formar filmes delgados sobre substratos. Ao se usar o método formador de segmento, o tamanho do alvo para faiscamento pode ser de até 6 m x 5,5 m. Os filmes delgados podem ser usados em componentes eletrónicos tais como Transistor de Filme Delgado - Mostradores de Cristal Líquido, Painéis para Mostrador de Plasma, Diodos Emissores de Luz Orgânicos, Mostradores para Diodos Emissores de Luz Inorgânicos, Mostradores para Emissão de Campa, células solares, sensores, dispositivos semicondutores e dispositivo para portão para CMOS (semicondutor de óxido de metal complementar) com funções de trabalho sintonizáveis.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/931,203 US20060042728A1 (en) | 2004-08-31 | 2004-08-31 | Molybdenum sputtering targets |
| PCT/US2005/030852 WO2006026621A2 (en) | 2004-08-31 | 2005-08-29 | Molybdenum tubular sputtering targets with uniform grain size and texture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0515132A true BRPI0515132A (pt) | 2008-07-08 |
Family
ID=35429607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0515132-5A BRPI0515132A (pt) | 2004-08-31 | 2005-08-29 | alvos para faiscamento de molibdênio |
Country Status (14)
| Country | Link |
|---|---|
| US (5) | US20060042728A1 (pt) |
| EP (2) | EP1784518A2 (pt) |
| JP (1) | JP2008511757A (pt) |
| KR (2) | KR20130080054A (pt) |
| CN (1) | CN100549202C (pt) |
| AU (1) | AU2005279847A1 (pt) |
| BR (1) | BRPI0515132A (pt) |
| CA (1) | CA2577162A1 (pt) |
| IL (1) | IL181454A0 (pt) |
| MX (1) | MX2007002290A (pt) |
| PL (1) | PL2065480T3 (pt) |
| RU (1) | RU2007111556A (pt) |
| TW (1) | TWI377261B (pt) |
| WO (1) | WO2006026621A2 (pt) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US20060042728A1 (en) | 2004-08-31 | 2006-03-02 | Brad Lemon | Molybdenum sputtering targets |
| US20060201589A1 (en) * | 2005-03-11 | 2006-09-14 | Honeywell International Inc. | Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components |
| AU2006243448B2 (en) * | 2005-05-05 | 2011-09-01 | H.C. Starck Inc. | Coating process for manufacture or reprocessing of sputter targets and X-ray anodes |
| JP5065248B2 (ja) | 2005-05-05 | 2012-10-31 | ハー.ツェー.スタルク ゲゼルシャフト ミット ベシュレンクテル ハフツング | 基材表面の被覆法及び被覆製品 |
| AT8697U1 (de) | 2005-10-14 | 2006-11-15 | Plansee Se | Rohrtarget |
| US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| EE05493B1 (et) * | 2006-03-07 | 2011-12-15 | Cabot Corporation | Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall |
| US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
| BRPI0718237A2 (pt) * | 2006-11-07 | 2013-11-12 | Starck H C Gmbh | Método para revestir uma superfície de substrato e produto revestido |
| US20080105542A1 (en) * | 2006-11-08 | 2008-05-08 | Purdy Clifford C | System and method of manufacturing sputtering targets |
| US7776166B2 (en) * | 2006-12-05 | 2010-08-17 | Praxair Technology, Inc. | Texture and grain size controlled hollow cathode magnetron targets and method of manufacture |
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| JP5426173B2 (ja) * | 2007-01-12 | 2014-02-26 | 新日鉄住金マテリアルズ株式会社 | Mo系スパッタリングターゲット板,および,その製造方法 |
| US8784729B2 (en) * | 2007-01-16 | 2014-07-22 | H.C. Starck Inc. | High density refractory metals and alloys sputtering targets |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| JP5389802B2 (ja) | 2007-08-06 | 2014-01-15 | エイチ.シー. スターク インコーポレイテッド | 組織の均一性が改善された高融点金属プレート |
| US8250895B2 (en) | 2007-08-06 | 2012-08-28 | H.C. Starck Inc. | Methods and apparatus for controlling texture of plates and sheets by tilt rolling |
| RU2365673C2 (ru) * | 2007-08-30 | 2009-08-27 | Вадим Георгиевич Глебовский | Распыляемая мишень из молибдена высокой чистоты и способ ее производства |
| KR100936016B1 (ko) * | 2007-11-23 | 2010-01-11 | 한양대학교 산학협력단 | 초미세 결정립 Mo 스퍼터링 타겟의 제조방법, 및 이로써얻어진 Mo 스퍼터링 타겟 |
| US20090181179A1 (en) * | 2008-01-11 | 2009-07-16 | Climax Engineered Materials, Llc | Sodium/Molybdenum Composite Metal Powders, Products Thereof, and Methods for Producing Photovoltaic Cells |
| JP2011523978A (ja) * | 2008-04-28 | 2011-08-25 | ハー ツェー シュタルク インコーポレイテッド | モリブデン−ニオブ合金、かかる合金を含有するスパッタリングターゲット、かかるターゲットの製造方法、それから製造される薄膜、およびその使用 |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
| FR2944295B1 (fr) * | 2009-04-10 | 2014-08-15 | Saint Gobain Coating Solutions | Cible a base de molybdene et procede d'elaboration par projection thermique d'une cible |
| FR2944293B1 (fr) | 2009-04-10 | 2012-05-18 | Saint Gobain Coating Solutions | Procede d'elaboration par projection thermique d'une cible |
| CN102470437B (zh) * | 2009-07-09 | 2014-11-05 | 株式会社东芝 | 高纯度钼粉末及其制造方法 |
| JP5550328B2 (ja) * | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Moスパッタリングターゲットおよびその製造方法 |
| CN101792897A (zh) * | 2010-04-06 | 2010-08-04 | 韩伟东 | 薄膜太阳能电池用高纯钼靶及其制备方法 |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| CN101956159A (zh) * | 2010-09-30 | 2011-01-26 | 金堆城钼业股份有限公司 | 一种高纯钼溅射靶材的制备方法 |
| KR101546594B1 (ko) * | 2010-09-30 | 2015-08-21 | 히타치 긴조쿠 가부시키가이샤 | 몰리브덴 타겟의 제조 방법 |
| DE102010053751A1 (de) | 2010-10-28 | 2012-05-03 | Oerlikon Trading Ag, Trübbach | Molybdänmonoxidschichten und deren Herstellung mittels PVD |
| CN102560359A (zh) * | 2010-12-30 | 2012-07-11 | 鸿富锦精密工业(深圳)有限公司 | 镀膜件及其制备方法 |
| KR101259599B1 (ko) | 2011-03-08 | 2013-04-30 | 한국생산기술연구원 | Cigs 태양전지의 배면전극용 몰리브덴 스퍼터링 타겟 제조방법 |
| EP2697798A4 (en) * | 2011-04-10 | 2014-11-05 | Univ Alberta | PREPARATION OF TECHNETIUM FROM A MOLYBDEN METAL TARGET |
| JP2012237056A (ja) * | 2011-04-28 | 2012-12-06 | Hitachi Metals Ltd | MoCrターゲット材の製造方法およびMoCrターゲット材 |
| KR20160021299A (ko) | 2011-05-10 | 2016-02-24 | 에이치. 씨. 스타아크 아이앤씨 | 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품 |
| US8703233B2 (en) | 2011-09-29 | 2014-04-22 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets by cold spray |
| CN102617044B (zh) * | 2012-03-05 | 2014-08-06 | 湖北大学 | 水热法制备垂直取向锐钛矿氧化钛薄膜的方法及其气敏传感器 |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| US9005357B2 (en) * | 2012-05-24 | 2015-04-14 | Agency For Science, Technology And Research | Method of preparing molybdenum oxide films |
| CN202828801U (zh) * | 2012-07-26 | 2013-03-27 | 富鼎电子科技(嘉善)有限公司 | 传送机构 |
| CN104342619B (zh) * | 2013-07-31 | 2017-06-30 | 宁波江丰电子材料股份有限公司 | 钼靶材的制作方法 |
| AT13602U3 (de) * | 2013-10-29 | 2014-08-15 | Plansee Se | Sputtering Target und Verfahren zur Herstellung |
| KR102316360B1 (ko) * | 2013-10-29 | 2021-10-22 | 플란제 에스이 | 스퍼터링 타깃 및 제조방법 |
| CN110257782B (zh) * | 2016-03-28 | 2021-12-21 | Jx金属株式会社 | 圆筒型溅射靶及其制造方法 |
| KR102708594B1 (ko) | 2016-09-07 | 2024-09-23 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN106567047A (zh) * | 2016-11-04 | 2017-04-19 | 北方民族大学 | 一种热压法制备高纯微观组织可控的钼铌合金靶材方法 |
| CN108070832A (zh) * | 2016-11-14 | 2018-05-25 | 宁波江丰电子材料股份有限公司 | 钼铌靶坯的制造方法 |
| CN106493525A (zh) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | 一种溅射钛环的制备方法 |
| JP6768575B2 (ja) * | 2017-03-24 | 2020-10-14 | Jx金属株式会社 | タングステンシリサイドターゲット及びその製造方法 |
| CN107022739A (zh) * | 2017-05-19 | 2017-08-08 | 包头稀土研究院 | 溅射镀膜用钼旋转靶材的制造方法 |
| CN107815654B (zh) * | 2017-11-16 | 2020-02-11 | 金堆城钼业股份有限公司 | 一种制备二硫化钼溅射靶材的方法 |
| CN108546894A (zh) * | 2018-05-11 | 2018-09-18 | 成都联虹钼业有限公司 | 一种具有抗高温蠕变性能钼板的制备方法 |
| CN108687158B (zh) * | 2018-05-11 | 2019-12-17 | 成都联虹钼业有限公司 | 一种各向同性钼板的制备方法 |
| CN110777343A (zh) * | 2019-11-05 | 2020-02-11 | 河南科技大学 | 一种钼平面溅射靶材的制备方法 |
| US11043352B1 (en) | 2019-12-20 | 2021-06-22 | Varex Imaging Corporation | Aligned grain structure targets, systems, and methods of forming |
| CN111254396A (zh) * | 2020-01-21 | 2020-06-09 | 洛阳高新四丰电子材料有限公司 | 一种钼钨合金溅射靶材的制备方法 |
| CN111318570B (zh) * | 2020-03-05 | 2021-11-19 | 爱发科电子材料(苏州)有限公司 | 一种靶材晶粒微细化的制成工艺 |
| CN113463042A (zh) * | 2021-05-31 | 2021-10-01 | 洛阳科威钨钼有限公司 | 一种钼钛合金溅射镀膜靶材的制备方法 |
| KR102601264B1 (ko) * | 2021-08-13 | 2023-11-09 | 연세대학교 산학협력단 | 가스센서용 조성물, 이를 포함하는 가스센서 및 그의 제조방법 |
| CN113996819B (zh) * | 2021-09-30 | 2023-07-25 | 宁波江丰电子材料股份有限公司 | 一种圆形钼靶材组件的溅射弧面加工方法 |
| CN118119575A (zh) * | 2021-10-14 | 2024-05-31 | Lt金属株式会社 | 钼氧化物基烧结体、包含其的溅射靶材以及氧化物薄膜 |
| CN114131026B (zh) * | 2021-12-08 | 2024-05-24 | 西安瑞福莱钨钼有限公司 | 一种模压法生产钼管坯的工艺 |
| CN114411103A (zh) * | 2022-01-18 | 2022-04-29 | 宁波江丰钨钼材料有限公司 | 一种大尺寸钼靶材及其制备方法与应用 |
| CN114574821B (zh) * | 2022-01-31 | 2023-05-23 | 安泰科技股份有限公司 | 一种大尺寸钼靶材的制备方法 |
| CN116716561B (zh) * | 2023-06-14 | 2025-12-02 | 中国电子科技集团公司第四十八研究所 | 一种离子源栅网的加工方法 |
| KR20250065695A (ko) * | 2023-10-12 | 2025-05-13 | 가부시끼가이샤 아라이도 마테리아루 | 몰리브덴 함유 재료 |
| US20250290193A1 (en) * | 2024-03-13 | 2025-09-18 | Applied Materials, Inc. | Molybdenum physical vapor deposition target |
| CN118222997B (zh) * | 2024-04-18 | 2025-07-18 | 深圳仕上电子科技股份有限公司 | 防着板表面的钼去除工艺 |
| CN119615032B (zh) * | 2024-11-11 | 2026-02-27 | 先导薄膜材料(安徽)有限公司 | 一种钽靶材及其制备方法和应用 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066425A (ja) * | 1983-09-22 | 1985-04-16 | Nippon Telegr & Teleph Corp <Ntt> | Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法 |
| JP2757287B2 (ja) * | 1989-11-02 | 1998-05-25 | 日立金属株式会社 | タングステンターゲットの製造方法 |
| JPH0539566A (ja) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| JP3769761B2 (ja) * | 1994-04-28 | 2006-04-26 | 住友化学株式会社 | アルミニウム合金単結晶ターゲットおよびその製造方法 |
| US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
| JP3743740B2 (ja) * | 1998-07-27 | 2006-02-08 | 日立金属株式会社 | Mo系焼結ターゲット材 |
| US6183614B1 (en) | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| US6238526B1 (en) * | 1999-02-14 | 2001-05-29 | Advanced Ion Technology, Inc. | Ion-beam source with channeling sputterable targets and a method for channeled sputtering |
| US6342133B2 (en) | 2000-03-14 | 2002-01-29 | Novellus Systems, Inc. | PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter |
| JP3748221B2 (ja) * | 2001-10-23 | 2006-02-22 | 日立金属株式会社 | Mo系スパッタリング用ターゲットおよびその製造方法 |
| KR100686494B1 (ko) | 2002-12-30 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법 |
| US7534282B2 (en) * | 2003-09-16 | 2009-05-19 | Japan New Metals Co., Ltd. | High purity metal Mo coarse powder and sintered sputtering target produced by thereof |
| US20050279630A1 (en) * | 2004-06-16 | 2005-12-22 | Dynamic Machine Works, Inc. | Tubular sputtering targets and methods of flowforming the same |
| US8088232B2 (en) | 2004-08-31 | 2012-01-03 | H.C. Starck Inc. | Molybdenum tubular sputtering targets with uniform grain size and texture |
| US20060042728A1 (en) | 2004-08-31 | 2006-03-02 | Brad Lemon | Molybdenum sputtering targets |
-
2004
- 2004-08-31 US US10/931,203 patent/US20060042728A1/en not_active Abandoned
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2005
- 2005-08-29 PL PL09154926T patent/PL2065480T3/pl unknown
- 2005-08-29 JP JP2007530275A patent/JP2008511757A/ja not_active Withdrawn
- 2005-08-29 KR KR1020137013387A patent/KR20130080054A/ko not_active Ceased
- 2005-08-29 AU AU2005279847A patent/AU2005279847A1/en not_active Abandoned
- 2005-08-29 CN CNB2005800372658A patent/CN100549202C/zh not_active Expired - Fee Related
- 2005-08-29 CA CA002577162A patent/CA2577162A1/en not_active Abandoned
- 2005-08-29 KR KR1020077007294A patent/KR20070057225A/ko not_active Ceased
- 2005-08-29 WO PCT/US2005/030852 patent/WO2006026621A2/en not_active Ceased
- 2005-08-29 BR BRPI0515132-5A patent/BRPI0515132A/pt not_active IP Right Cessation
- 2005-08-29 RU RU2007111556/02A patent/RU2007111556A/ru not_active Application Discontinuation
- 2005-08-29 EP EP05792638A patent/EP1784518A2/en not_active Ceased
- 2005-08-29 MX MX2007002290A patent/MX2007002290A/es not_active Application Discontinuation
- 2005-08-29 EP EP20090154926 patent/EP2065480B1/en not_active Expired - Lifetime
- 2005-08-30 TW TW94129572A patent/TWI377261B/zh not_active IP Right Cessation
-
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- 2007-02-20 IL IL181454A patent/IL181454A0/en unknown
-
2011
- 2011-12-30 US US13/340,973 patent/US8425833B2/en not_active Expired - Fee Related
-
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- 2013-03-25 US US13/849,918 patent/US9017600B2/en not_active Expired - Fee Related
-
2015
- 2015-01-29 US US14/608,995 patent/US9309591B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| RU2007111556A (ru) | 2008-10-10 |
| US20130224059A1 (en) | 2013-08-29 |
| US20060042728A1 (en) | 2006-03-02 |
| US9309591B2 (en) | 2016-04-12 |
| EP2065480B1 (en) | 2012-05-30 |
| US20150136584A1 (en) | 2015-05-21 |
| CA2577162A1 (en) | 2006-03-06 |
| US9926623B2 (en) | 2018-03-27 |
| IL181454A0 (en) | 2007-07-04 |
| MX2007002290A (es) | 2007-04-16 |
| AU2005279847A1 (en) | 2006-03-09 |
| JP2008511757A (ja) | 2008-04-17 |
| KR20130080054A (ko) | 2013-07-11 |
| US20120189483A1 (en) | 2012-07-26 |
| CN100549202C (zh) | 2009-10-14 |
| KR20070057225A (ko) | 2007-06-04 |
| US20160186311A1 (en) | 2016-06-30 |
| TW200624581A (en) | 2006-07-16 |
| EP1784518A2 (en) | 2007-05-16 |
| TWI377261B (en) | 2012-11-21 |
| US8425833B2 (en) | 2013-04-23 |
| CN101057000A (zh) | 2007-10-17 |
| PL2065480T3 (pl) | 2012-12-31 |
| WO2006026621A2 (en) | 2006-03-09 |
| US9017600B2 (en) | 2015-04-28 |
| WO2006026621A3 (en) | 2006-07-13 |
| EP2065480A1 (en) | 2009-06-03 |
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