BRPI0515810A - composições não-aquosas, não-corrosivas para limpeza em microeletrÈnica - Google Patents
composições não-aquosas, não-corrosivas para limpeza em microeletrÈnicaInfo
- Publication number
- BRPI0515810A BRPI0515810A BRPI0515810-9A BRPI0515810A BRPI0515810A BR PI0515810 A BRPI0515810 A BR PI0515810A BR PI0515810 A BRPI0515810 A BR PI0515810A BR PI0515810 A BRPI0515810 A BR PI0515810A
- Authority
- BR
- Brazil
- Prior art keywords
- alkyl
- integer
- alkoxy
- cleaning compositions
- aqueous
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 title abstract 4
- 230000009972 noncorrosive effect Effects 0.000 title abstract 3
- 238000004377 microelectronic Methods 0.000 title abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 5
- 125000003545 alkoxy group Chemical group 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 3
- 230000007797 corrosion Effects 0.000 abstract 3
- 238000005260 corrosion Methods 0.000 abstract 3
- 230000002401 inhibitory effect Effects 0.000 abstract 3
- 125000003118 aryl group Chemical group 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 2
- -1 polyhydroxyalkyl Chemical group 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- JJLKTTCRRLHVGL-UHFFFAOYSA-L [acetyloxy(dibutyl)stannyl] acetate Chemical compound CC([O-])=O.CC([O-])=O.CCCC[Sn+2]CCCC JJLKTTCRRLHVGL-UHFFFAOYSA-L 0.000 abstract 1
- 125000001931 aliphatic group Chemical group 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 125000003368 amide group Chemical group 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 125000004103 aminoalkyl group Chemical group 0.000 abstract 1
- 125000005243 carbonyl alkyl group Chemical group 0.000 abstract 1
- 150000004696 coordination complex Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000006184 cosolvent Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000003495 polar organic solvent Substances 0.000 abstract 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
- B28D7/04—Accessories specially adapted for use with machines or devices of the preceding groups for supporting or holding work or conveying or discharging work
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mining & Mineral Resources (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
"COMPOSIçõES NãO-AQUOSAS, NãO-CORROSIVAS PARA LIMPEZA EM MICROELETRÈNICA". A presente invenção refere-se a agentes de extração para material fotorresistente de extremidade final e composições para limpeza desta invenção que são fornecidas por composições para limpeza isentas de aminoácido, não-aquosas, e são essencialmente não-corrosivas em relação a cobre assim como a alumínio e que compreendem pelo menos um solvente orgânico polar, pelo menos uma amina orgânica hidroxilada e pelo menos um composto inibidor de corrosão com múltiplos grupos funcionais hidroxila que é um composto de fórmula: T~ 1~-(CR~ 1~R~ 2~)m, (CR~ 3~R~ 4~)n!p-(CR~ 5R~ 6~)q,-T~ 2~ em que pelo menos um de R~ 1~ e R~ 2~ OH e um de R~ 1~ e R~ 2~ não é OH, este é selecionado entre H, alquila ou alcóxi, m é um número inteiro de 1 ou maior, R~ 3~ e R~ 4~ são selecionados entre H, alquila ou alcóxi, n é 0 ou um número inteiro positivo maior, p é um número inteiro 1 ou maior, pelo menos um de R~ 5~ e R~ 6~ é OH e se um de R~ 5~ e R~ 6~ não for OH, este é selecionado entre H, alquila ou alcóxi, q é um número inteiro de 1 ou maior; T~ 1~ e T~ 2~ são selecionados entre grupos H, alquila, hidroxialquila, polihidroxialquila, aminoalquila, carbonilalquila ou amida ou T~ 1~ e T~ 2~ podem estar ligados formando uma estrutura selecionada entre uma estrutura cíclica alifática ou cíclica fundida e opcionalmente um ou mais de co-solvente que contém hidroxila, composto arila inibidor de corrosão que contém dois ou mais grupos OH, OR~ 6~ e/ou SO~ 2~R~ 6~R~ 7~ ligados diretamente a um anel aromático, em que R~ 6~, R~ 7~ e R~ 8~ são cada um independentemente selecionados do grupo que consiste em alquila e arila, agente de formação de complexo de metal, um composto inibidor de corrosão de metal diferente e tensoativo.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63414104P | 2004-12-08 | 2004-12-08 | |
| PCT/US2005/006247 WO2006062534A1 (en) | 2004-12-08 | 2005-02-25 | Non-aqueous, non-corrosive microelectronic cleaning compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0515810A true BRPI0515810A (pt) | 2008-08-05 |
Family
ID=34961521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0515810-9A BRPI0515810A (pt) | 2004-12-08 | 2005-02-25 | composições não-aquosas, não-corrosivas para limpeza em microeletrÈnica |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7951764B2 (pt) |
| EP (1) | EP1836535A1 (pt) |
| JP (1) | JP4208924B2 (pt) |
| KR (1) | KR20060064441A (pt) |
| CN (1) | CN1784487B (pt) |
| BR (1) | BRPI0515810A (pt) |
| CA (1) | CA2591483A1 (pt) |
| IL (1) | IL183648A (pt) |
| MY (1) | MY141293A (pt) |
| NO (1) | NO20073122L (pt) |
| TW (1) | TWI353381B (pt) |
| WO (1) | WO2006062534A1 (pt) |
| ZA (1) | ZA200704029B (pt) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101088568B1 (ko) * | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
| KR101403515B1 (ko) * | 2006-06-22 | 2014-06-09 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 조성물 |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子（上海）有限公司 | 低蚀刻性较厚光刻胶清洗液 |
| FR2912151B1 (fr) * | 2007-02-05 | 2009-05-08 | Arkema France | Formulation de dimethylsulfoxyde en melange avec un additif permettant d'abaisser le point de cristallisation de ce dernier, et applications de ce melange |
| KR101525505B1 (ko) | 2008-07-23 | 2015-06-03 | 이와다니산교가부시기가이샤 | 오존가스 농축 방법 및 그 장치 |
| JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ， インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
| KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
| KR101831452B1 (ko) * | 2009-02-25 | 2018-02-22 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물 |
| JP5647685B2 (ja) * | 2009-08-11 | 2015-01-07 | 東友ファインケム株式会社 | レジスト剥離液組成物及びこれを用いたレジストの剥離方法 |
| EP2432035B1 (en) | 2010-09-21 | 2017-05-31 | Sun Chemical Corporation | Improved method of stripping hot melt etch resists from semiconductors |
| SG11201400840UA (en) | 2011-10-05 | 2014-04-28 | Avantor Performance Mat Inc | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
| TWI588253B (zh) | 2012-03-16 | 2017-06-21 | 巴地斯顏料化工廠 | 光阻剝除與清潔組合物及其製備方法與用途 |
| ES2549579B1 (es) * | 2014-04-28 | 2016-10-05 | Universidad De Granada | Composición para eliminar cementos y morteros a base de cemento |
| KR101586453B1 (ko) * | 2014-08-20 | 2016-01-21 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법 |
| TWI818893B (zh) * | 2015-07-14 | 2023-10-21 | 美商富士軟片電子材料美國股份有限公司 | 清潔組成物及其使用方法 |
| KR102209389B1 (ko) * | 2016-09-26 | 2021-01-28 | 주식회사 엘지화학 | 포토레지스트 제거용 스트리퍼 폐액의 정제 방법 |
| TWI824299B (zh) * | 2020-09-22 | 2023-12-01 | 美商恩特葛瑞斯股份有限公司 | 蝕刻劑組合物 |
| CN113921383B (zh) | 2021-09-14 | 2022-06-03 | 浙江奥首材料科技有限公司 | 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
| US5300628A (en) * | 1992-06-29 | 1994-04-05 | Ocg Microelectronic Materials, Inc. | Selected chelate resins and their use to remove multivalent metal impurities from resist components |
| US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
| US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
| US5612304A (en) * | 1995-07-07 | 1997-03-18 | Olin Microelectronic Chemicals, Inc. | Redox reagent-containing post-etch residue cleaning composition |
| JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| JP3929518B2 (ja) | 1995-11-30 | 2007-06-13 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
| US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
| US5962197A (en) * | 1998-03-27 | 1999-10-05 | Analyze Inc. | Alkaline organic photoresist stripper |
| US6465403B1 (en) | 1998-05-18 | 2002-10-15 | David C. Skee | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
| KR100286860B1 (ko) * | 1998-12-31 | 2001-07-12 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
| JP4224651B2 (ja) * | 1999-02-25 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離剤およびそれを用いた半導体素子の製造方法 |
| KR100360985B1 (ko) * | 2000-04-26 | 2002-11-18 | 주식회사 동진쎄미켐 | 레지스트 스트리퍼 조성물 |
| US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
| CN1271475C (zh) * | 2001-05-21 | 2006-08-23 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
| MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| CN100403169C (zh) | 2001-07-13 | 2008-07-16 | Ekc技术公司 | 亚砜吡咯烷酮链烷醇胺剥离和清洗组合物 |
| JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| KR20060014388A (ko) * | 2003-05-02 | 2006-02-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 공정에서의 에칭후 잔류물의 제거 방법 |
| JP4202859B2 (ja) * | 2003-08-05 | 2008-12-24 | 花王株式会社 | レジスト用剥離剤組成物 |
| US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
| ATE471537T1 (de) * | 2004-07-15 | 2010-07-15 | Mallinckrodt Baker Inc | Nichtwässrige mikroelektronische reinigungszusammensetzungen mit fructose |
| BRPI0518420A2 (pt) * | 2004-12-10 | 2008-11-25 | Mallinckrodt Baker Inc | composiÇÕes de limpeza de microeletrânicos nço-aquosas, nço-corrosivas, contendo inibidores de corrosço polimÉricos |
-
2005
- 2005-02-21 KR KR1020050014185A patent/KR20060064441A/ko not_active Ceased
- 2005-02-25 BR BRPI0515810-9A patent/BRPI0515810A/pt not_active IP Right Cessation
- 2005-02-25 CA CA002591483A patent/CA2591483A1/en not_active Abandoned
- 2005-02-25 US US11/720,084 patent/US7951764B2/en not_active Expired - Fee Related
- 2005-02-25 EP EP05723913A patent/EP1836535A1/en not_active Withdrawn
- 2005-02-25 JP JP2006547639A patent/JP4208924B2/ja not_active Expired - Fee Related
- 2005-02-25 CN CN2005800000871A patent/CN1784487B/zh not_active Expired - Fee Related
- 2005-02-25 WO PCT/US2005/006247 patent/WO2006062534A1/en not_active Ceased
- 2005-02-25 MY MYPI20050741A patent/MY141293A/en unknown
- 2005-03-23 TW TW094108971A patent/TWI353381B/zh not_active IP Right Cessation
-
2007
- 2007-05-18 ZA ZA200704029A patent/ZA200704029B/xx unknown
- 2007-06-04 IL IL183648A patent/IL183648A/en not_active IP Right Cessation
- 2007-06-18 NO NO20073122A patent/NO20073122L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2591483A1 (en) | 2006-06-15 |
| MY141293A (en) | 2010-04-16 |
| IL183648A (en) | 2013-02-28 |
| TWI353381B (en) | 2011-12-01 |
| US7951764B2 (en) | 2011-05-31 |
| EP1836535A1 (en) | 2007-09-26 |
| KR20060064441A (ko) | 2006-06-13 |
| JP2007514983A (ja) | 2007-06-07 |
| US20080103078A1 (en) | 2008-05-01 |
| IL183648A0 (en) | 2007-09-20 |
| TW200619380A (en) | 2006-06-16 |
| CN1784487B (zh) | 2012-10-03 |
| ZA200704029B (en) | 2008-05-28 |
| NO20073122L (no) | 2007-08-28 |
| CN1784487A (zh) | 2006-06-07 |
| JP4208924B2 (ja) | 2009-01-14 |
| WO2006062534A1 (en) | 2006-06-15 |
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