BRPI0608389A2 - equipamento e método para aplicar uma camada fina uniforme de lìquido em substratos - Google Patents
equipamento e método para aplicar uma camada fina uniforme de lìquido em substratosInfo
- Publication number
- BRPI0608389A2 BRPI0608389A2 BRPI0608389-7A BRPI0608389A BRPI0608389A2 BR PI0608389 A2 BRPI0608389 A2 BR PI0608389A2 BR PI0608389 A BRPI0608389 A BR PI0608389A BR PI0608389 A2 BRPI0608389 A2 BR PI0608389A2
- Authority
- BR
- Brazil
- Prior art keywords
- liquid
- equipment
- applying
- substrates
- uniform thin
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B17/00—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups
- B05B17/04—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods
- B05B17/06—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations
- B05B17/0607—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers
- B05B17/0615—Apparatus for spraying or atomising liquids or other fluent materials, not covered by the preceding groups operating with special methods using ultrasonic or other kinds of vibrations generated by electrical means, e.g. piezoelectric transducers spray being produced at the free surface of the liquid or other fluent material in a container and subjected to the vibrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B14/00—Arrangements for collecting, re-using or eliminating excess spraying material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/0012—Apparatus for achieving spraying before discharge from the apparatus
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3306—Horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Special Spraying Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Coating Apparatus (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
EQUIPAMENTO E METODO PARA APLICAR UMA CAMADA FINA UNIFORME DE LìQUIDO EM SUBSTRATOS. A presente invenção refere-se a um equipamento (10) para aplicar uma camada fina uniforme de líquido, especialmente de ácido fosfórico, em células de sílicio (12) para a técnica fotovoltaica, com uma câmara de processo (14) que possuí uma bacia de líquido (16) e um dispositivo de som de alta freqUência (11) que transforma o líquido em uma névoa de líquido (15) e dotado com um equipamento de transporte (13) para as células de silício (12), disposto abaixo de um poço sob pressão (25) da câmara de processo (14) . De acordo com a presente invenção, tal equipamento (10) permite uma aplicação mais homogênea de líquido sobre as células de sílicio no que se refere tanto à superfície e à quantidade aplicada, isto pode ser alcançado pelo fato de que o poço sob pressão (25) para a névoa de líquido da câmara de processo (14) passa por um adelgaçamento do seu diâmetro livre em direção ao equipamento de transporte 13, desembocando em uma disposição de poço de passagem (40) que cobre o equipamento de transporte (13) para os substratos de sílicio (12) e que os diâmetros livres da extremidade da abertura do poço sob pressão (25) para névoa de liquido (25) e da disposição de poço de passagem (40) são mutuamente adaptados, de preferência, são essencialmente idênticos.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102005019686A DE102005019686B3 (de) | 2005-04-22 | 2005-04-22 | Einrichtung und Verfahren zum Aufbringen einer gleichmäßigen, dünnen Flüssigkeitsschicht auf Substrate |
| PCT/EP2006/002797 WO2006111247A1 (de) | 2005-04-22 | 2006-03-28 | Einrichtung und verfahren zum aufbringen einer gleichmässigen, dünnen flüssigkeitsschicht auf substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0608389A2 true BRPI0608389A2 (pt) | 2009-12-29 |
Family
ID=36089158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0608389-7A BRPI0608389A2 (pt) | 2005-04-22 | 2006-03-28 | equipamento e método para aplicar uma camada fina uniforme de lìquido em substratos |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US8136478B2 (pt) |
| EP (1) | EP1872386B1 (pt) |
| JP (1) | JP4955656B2 (pt) |
| KR (1) | KR20080009132A (pt) |
| CN (1) | CN100594583C (pt) |
| AT (1) | ATE481732T1 (pt) |
| AU (1) | AU2006237053B8 (pt) |
| BR (1) | BRPI0608389A2 (pt) |
| CA (1) | CA2604256A1 (pt) |
| DE (2) | DE102005019686B3 (pt) |
| ES (1) | ES2349656T3 (pt) |
| IL (1) | IL186720A0 (pt) |
| RU (1) | RU2405227C2 (pt) |
| WO (1) | WO2006111247A1 (pt) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005019686B3 (de) * | 2005-04-22 | 2006-04-13 | Schmid Technology Systems Gmbh | Einrichtung und Verfahren zum Aufbringen einer gleichmäßigen, dünnen Flüssigkeitsschicht auf Substrate |
| US8323220B2 (en) * | 2008-09-19 | 2012-12-04 | Eilaz Babaev | Spider vein treatment apparatus |
| US8376969B2 (en) * | 2008-09-22 | 2013-02-19 | Bacoustics, Llc | Methods for treatment of spider veins |
| EP2190017A1 (en) | 2008-11-20 | 2010-05-26 | SAPHIRE ApS | High voltage semiconductor based wafer |
| WO2010057978A1 (en) | 2008-11-20 | 2010-05-27 | Saphire Aps | High voltage semiconductor based wafer and a solar module having integrated electronic devices |
| DE102009059042A1 (de) * | 2009-12-10 | 2011-06-16 | Schmid Technology Gmbh | Verfahren und Vorrichtung zur Übertragung von Drucksubstanz von einem Drucksubstanzträger auf ein Substrat |
| CN102284393B (zh) * | 2010-06-17 | 2014-04-02 | 海洋王照明科技股份有限公司 | 一种荧光粉涂覆装置及使用该涂覆装置的涂覆方法 |
| CN103250230B (zh) * | 2010-12-13 | 2016-08-31 | Tp太阳能公司 | 掺杂剂涂布系统以及涂布蒸气化掺杂化合物于光伏太阳能晶圆的方法 |
| AT512219B1 (de) | 2011-12-02 | 2016-06-15 | Braincon Handels-Gmbh | Zerstäubungsvorrichtung |
| FR2995728B1 (fr) * | 2012-09-14 | 2014-10-24 | Commissariat Energie Atomique | Dispositif et procede de restauration des cellules solaires a base de silicium avec transducteur ultrason |
| JP5680604B2 (ja) * | 2012-10-29 | 2015-03-04 | 株式会社川熱 | 防食被膜付き鉄筋棒の製造装置 |
| FI125920B (en) * | 2013-09-09 | 2016-04-15 | Beneq Oy | A method of coating a substrate |
| FR3023735B1 (fr) * | 2014-07-17 | 2016-07-29 | Areco Finances Et Tech - Arfitec | Nebuliseur compact pour rafraichir l'air |
| DE102014112625A1 (de) | 2014-09-02 | 2016-03-03 | Schmid Energy Systems Gmbh | Großflächen-Ultraschallverdampfer |
| CL2018003252A1 (es) * | 2018-11-16 | 2019-03-15 | Un sistema de nebulizacion en linea por ultrasonido, útil en la disposición de agentes agroquimicos para la fruta de postcosecha | |
| US11458500B2 (en) * | 2020-08-24 | 2022-10-04 | Bloomy Lotus Limited | Focused ultrasonic atomizer |
| CN215062598U (zh) * | 2021-05-13 | 2021-12-07 | 中山市斯泰尔电器科技有限公司 | 一种新型聚能装置及超声波加湿器 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5468039A (en) * | 1977-11-09 | 1979-05-31 | Matsushita Electric Ind Co Ltd | Ultrasonic wave humidifier |
| CA1152230A (en) * | 1979-10-18 | 1983-08-16 | Christopher P. Ausschnitt | Coating method and apparatus |
| US4360393A (en) * | 1980-12-18 | 1982-11-23 | Solarex Corporation | Vapor deposition of H3 PO4 and formation of thin phosphorus layer on silicon substrates |
| SU1385932A1 (ru) * | 1986-01-24 | 1991-12-15 | Предприятие П/Я А-1680 | Устройство дл нанесени сло фоторезиста на подложки |
| US5387444A (en) * | 1992-02-27 | 1995-02-07 | Dymax Corporation | Ultrasonic method for coating workpieces, preferably using two-part compositions |
| JPH06232541A (ja) * | 1993-02-05 | 1994-08-19 | Fujitsu Ltd | フラックスの塗布方法およびこれに使用するフラックス塗布装置 |
| DE4402758A1 (de) * | 1994-01-31 | 1995-08-03 | Moedinger Volker | Verfahren zum Aufbringen von Flußmittel auf Leiterplatten |
| JP3500777B2 (ja) * | 1995-06-22 | 2004-02-23 | セイコーエプソン株式会社 | 基板のコーティング方法、基板のコーティング装置、液晶表示体の製造方法、および面照明装置の製造方法 |
| US6349668B1 (en) * | 1998-04-27 | 2002-02-26 | Msp Corporation | Method and apparatus for thin film deposition on large area substrates |
| JP2000005668A (ja) | 1998-06-22 | 2000-01-11 | Toppan Printing Co Ltd | 流体塗布装置 |
| JP2000044238A (ja) * | 1998-07-22 | 2000-02-15 | Matsushita Battery Industrial Co Ltd | 二酸化錫膜の製造方法および太陽電池 |
| JP3465872B2 (ja) * | 1998-09-21 | 2003-11-10 | 松下電池工業株式会社 | 太陽電池用テルル化カドミウム膜の処理方法と処理装置 |
| DE19924108B4 (de) * | 1999-05-26 | 2007-05-03 | Robert Bosch Gmbh | Plasmapolymerbeschichtung und Verfahren zu deren Herstellung |
| CN1086158C (zh) * | 1999-08-30 | 2002-06-12 | 上海交通大学 | 透明导电薄膜和减反射薄膜喷涂装置及其方法 |
| JP2001205151A (ja) * | 2000-01-26 | 2001-07-31 | Inax Corp | 均一液体薄膜形成装置 |
| JP2001231832A (ja) * | 2000-02-21 | 2001-08-28 | Besutekku:Kk | 超音波振動基体、超音波プローブ、美容機器及び健康機器 |
| JP2001259494A (ja) * | 2000-03-17 | 2001-09-25 | Matsushita Battery Industrial Co Ltd | 薄膜形成方法 |
| US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
| US6841006B2 (en) * | 2001-08-23 | 2005-01-11 | Applied Materials, Inc. | Atmospheric substrate processing apparatus for depositing multiple layers on a substrate |
| FR2856941B1 (fr) | 2003-07-01 | 2006-08-11 | Bostik Findley Sa | Dispositif et procede d'enduction |
| JP2006103004A (ja) * | 2004-09-30 | 2006-04-20 | Fuji Photo Film Co Ltd | 液体吐出ヘッド |
| DE102005019686B3 (de) * | 2005-04-22 | 2006-04-13 | Schmid Technology Systems Gmbh | Einrichtung und Verfahren zum Aufbringen einer gleichmäßigen, dünnen Flüssigkeitsschicht auf Substrate |
-
2005
- 2005-04-22 DE DE102005019686A patent/DE102005019686B3/de not_active Expired - Fee Related
-
2006
- 2006-03-28 KR KR1020077027142A patent/KR20080009132A/ko not_active Ceased
- 2006-03-28 BR BRPI0608389-7A patent/BRPI0608389A2/pt not_active IP Right Cessation
- 2006-03-28 WO PCT/EP2006/002797 patent/WO2006111247A1/de not_active Ceased
- 2006-03-28 JP JP2008506955A patent/JP4955656B2/ja not_active Expired - Fee Related
- 2006-03-28 RU RU2007137829/28A patent/RU2405227C2/ru not_active IP Right Cessation
- 2006-03-28 CN CN200680013599A patent/CN100594583C/zh not_active Expired - Fee Related
- 2006-03-28 AT AT06707647T patent/ATE481732T1/de active
- 2006-03-28 DE DE502006007888T patent/DE502006007888D1/de not_active Expired - Lifetime
- 2006-03-28 AU AU2006237053A patent/AU2006237053B8/en not_active Ceased
- 2006-03-28 CA CA002604256A patent/CA2604256A1/en not_active Abandoned
- 2006-03-28 ES ES06707647T patent/ES2349656T3/es not_active Expired - Lifetime
- 2006-03-28 US US11/918,981 patent/US8136478B2/en not_active Expired - Fee Related
- 2006-03-28 EP EP06707647A patent/EP1872386B1/de not_active Expired - Lifetime
-
2007
- 2007-10-17 IL IL186720A patent/IL186720A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20090053397A1 (en) | 2009-02-26 |
| AU2006237053A1 (en) | 2006-10-26 |
| AU2006237053B2 (en) | 2011-06-02 |
| DE102005019686B3 (de) | 2006-04-13 |
| EP1872386B1 (de) | 2010-09-15 |
| JP4955656B2 (ja) | 2012-06-20 |
| ES2349656T3 (es) | 2011-01-10 |
| CA2604256A1 (en) | 2006-10-26 |
| CN101164139A (zh) | 2008-04-16 |
| JP2008536669A (ja) | 2008-09-11 |
| AU2006237053A8 (en) | 2011-07-07 |
| RU2405227C2 (ru) | 2010-11-27 |
| IL186720A0 (en) | 2008-02-09 |
| AU2006237053B8 (en) | 2011-07-07 |
| KR20080009132A (ko) | 2008-01-24 |
| RU2007137829A (ru) | 2009-05-27 |
| WO2006111247A1 (de) | 2006-10-26 |
| ATE481732T1 (de) | 2010-10-15 |
| EP1872386A1 (de) | 2008-01-02 |
| DE502006007888D1 (de) | 2010-10-28 |
| CN100594583C (zh) | 2010-03-17 |
| US8136478B2 (en) | 2012-03-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 7A ANUI DADE. |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2211 DE 21/05/2013. |