BRPI0721193B8 - dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação - Google Patents

dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação Download PDF

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Publication number
BRPI0721193B8
BRPI0721193B8 BRPI0721193A BRPI0721193A BRPI0721193B8 BR PI0721193 B8 BRPI0721193 B8 BR PI0721193B8 BR PI0721193 A BRPI0721193 A BR PI0721193A BR PI0721193 A BRPI0721193 A BR PI0721193A BR PI0721193 B8 BRPI0721193 B8 BR PI0721193B8
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BR
Brazil
Prior art keywords
copper
tin
zinc
manufacturing process
gallium
Prior art date
Application number
BRPI0721193A
Other languages
English (en)
Inventor
Maria Correia Fortunato Elvira
Ferrão De Paiva Martins Rodrigo
Original Assignee
Univ Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nova De Lisboa filed Critical Univ Nova De Lisboa
Publication of BRPI0721193A2 publication Critical patent/BRPI0721193A2/pt
Publication of BRPI0721193B1 publication Critical patent/BRPI0721193B1/pt
Publication of BRPI0721193B8 publication Critical patent/BRPI0721193B8/pt

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/07—Manufacture or treatment characterised by using material-based technologies using Group II-VI technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação a presente invenção relaciona- se ao uso de semicondutores de óxidos tipos p e n de cobre e níquel (ocuxniy com 0 < x < 3; 0 < y < 3) ou óxido multicomponente de gálio-estanho-zinco-cobre-ti, designado aqui após por gszcto, em diferentes composições molares, possuindo uma estrutura amorfa ou cristalina e com características elétricas de um semicondutor doador ou receptor de elétrons, dopado ou não dopado com impurezas, tais como, zircônio ou níquel ou nitrogênio, como forma de controlar o comportamento eletrônico do semicondutor (valência); incluindo o processo de fabricação à temperatura ambiente ou temperaturas inferiores a 100ºc e suas aplicações nos campos da optoeletrônica e eletrônica para produção de dispositivos, tais como, complementar-metal-óxidosemicondutor, transistores de filmes finos, heterojunções pn, portas lógicas, osciladores em anel, usando-se substratos de vidro, metálicos, poliméricos ou de material celulósico, nos quais uma camada de proteção à base de fluoreto de magnésio é usada, junto com uma camada de adaptação de óxido de tântalo dos semicondutores ativos ao dielétrico, tal como o dióxido de silício.
BRPI0721193A 2007-02-05 2007-02-05 dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação BRPI0721193B8 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/PT2007/000008 WO2008097117A1 (en) 2007-02-05 2007-02-05 ELECTRONIC SEMICONDUCTOR DEVICE BASED ON COPPER NICKEL AND GALLIUM-TIN-ZINC-COPPER-TITANIUM p AND n-TYPE OXIDES, THEIR APPLICATIONS AND CORRESPONDING MANUFACTURE PROCESS

Publications (3)

Publication Number Publication Date
BRPI0721193A2 BRPI0721193A2 (pt) 2016-06-21
BRPI0721193B1 BRPI0721193B1 (pt) 2019-08-27
BRPI0721193B8 true BRPI0721193B8 (pt) 2019-10-29

Family

ID=38647954

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0721193A BRPI0721193B8 (pt) 2007-02-05 2007-02-05 dispositivo semicondutor eletrônico baseado em óxidos de cobre e níquel e gálio-estanho-zinco-cobre-titânio tipos p e n, e respectivo processo de fabricação

Country Status (7)

Country Link
US (1) US8274082B2 (pt)
EP (1) EP2115770B1 (pt)
JP (1) JP2010518619A (pt)
BR (1) BRPI0721193B8 (pt)
CA (1) CA2677312C (pt)
PT (1) PT2115770T (pt)
WO (1) WO2008097117A1 (pt)

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SE505087C2 (sv) * 1995-10-09 1997-06-23 Tetra Laval Holdings & Finance Förpackningslaminat och sätt att framställa förpackningslaminatet samt av förpackningslaminatet framställda förpackningsbehållare med goda syrgastäthetsegenskaper
US8384439B2 (en) * 2008-11-28 2013-02-26 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
JP5506213B2 (ja) * 2009-03-06 2014-05-28 キヤノン株式会社 半導体素子の形成方法
KR101781336B1 (ko) 2009-12-25 2017-09-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5776192B2 (ja) * 2010-02-16 2015-09-09 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置及びシステム
WO2011108382A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101420289B1 (ko) * 2010-04-15 2014-07-17 패컬티 오브 사이언스 앤드 테크놀로지 유니버시티 오브 뉴 리스본 반도체 소자 및 그 제조 방법
US9053937B2 (en) 2010-04-15 2015-06-09 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
US8692243B2 (en) * 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2012029596A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013125826A (ja) * 2011-12-14 2013-06-24 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101284587B1 (ko) * 2012-05-17 2013-07-11 한국과학기술연구원 Ｐ-형 투명 산화물 반도체, 이를 포함하는 트랜지스터 및 그 제조방법
TWI495615B (zh) 2012-09-28 2015-08-11 財團法人工業技術研究院 ｐ型金屬氧化物半導體材料
KR102045730B1 (ko) * 2012-12-28 2019-12-03 엘지디스플레이 주식회사 인버터와 이를 이용한 구동회로 및 표시장치
US9589852B2 (en) * 2013-07-22 2017-03-07 Cree, Inc. Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US20180005960A1 (en) * 2015-01-14 2018-01-04 Corning Incorporated Glass substrate and display device comprising the same
US11286553B2 (en) * 2015-03-11 2022-03-29 Essilor International Method for vapor deposition of optical substrate
CO2017007378A1 (es) * 2017-07-25 2019-01-31 Univ Nat Colombia Peliculas delgadas de oxinitruro binario de niquel-cobre (nicuoxny) y las condiciones para su fabricación
CN114235903A (zh) * 2020-09-09 2022-03-25 中国科学院苏州纳米技术与纳米仿生研究所 一种气体传感器及其制作方法
CN113097231B (zh) * 2021-03-30 2023-06-02 电子科技大学 一种基于锡氧化物的pn结及其制备方法
CN113549453B (zh) * 2021-07-20 2023-05-12 陕西师范大学 一种具有高光电性能的CuO基复合材料

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JP5138163B2 (ja) * 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
RU2369940C2 (ru) * 2004-11-10 2009-10-10 Кэнон Кабусики Кайся Аморфный оксид и полевой транзистор с его использованием
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Also Published As

Publication number Publication date
BRPI0721193A2 (pt) 2016-06-21
JP2010518619A (ja) 2010-05-27
CA2677312C (en) 2015-08-04
AU2007346358A1 (en) 2008-08-14
US8274082B2 (en) 2012-09-25
CA2677312A1 (en) 2008-08-14
US20100090216A1 (en) 2010-04-15
PT2115770T (pt) 2019-02-15
BRPI0721193B1 (pt) 2019-08-27
EP2115770A1 (en) 2009-11-11
EP2115770B1 (en) 2018-10-10
WO2008097117A1 (en) 2008-08-14

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