BRPI0815400A2 - Plasma de baixa impedância - Google Patents

Plasma de baixa impedância

Info

Publication number
BRPI0815400A2
BRPI0815400A2 BRPI0815400-7A2A BRPI0815400A BRPI0815400A2 BR PI0815400 A2 BRPI0815400 A2 BR PI0815400A2 BR PI0815400 A BRPI0815400 A BR PI0815400A BR PI0815400 A2 BRPI0815400 A2 BR PI0815400A2
Authority
BR
Brazil
Prior art keywords
low impedance
impedance plasma
plasma
low
impedance
Prior art date
Application number
BRPI0815400-7A2A
Other languages
English (en)
Inventor
Victor Bellido-Gonzalez
Original Assignee
Genecoa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genecoa Ltd filed Critical Genecoa Ltd
Publication of BRPI0815400A2 publication Critical patent/BRPI0815400A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
BRPI0815400-7A2A 2007-08-15 2008-08-14 Plasma de baixa impedância BRPI0815400A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0715879.3A GB0715879D0 (en) 2007-08-15 2007-08-15 Low impedance plasma
PCT/GB2008/050709 WO2009022184A2 (en) 2007-08-15 2008-08-14 Low impedance plasma

Publications (1)

Publication Number Publication Date
BRPI0815400A2 true BRPI0815400A2 (pt) 2015-02-03

Family

ID=38566401

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0815400-7A2A BRPI0815400A2 (pt) 2007-08-15 2008-08-14 Plasma de baixa impedância

Country Status (8)

Country Link
US (1) US9028660B2 (pt)
EP (1) EP2186108B1 (pt)
JP (1) JP4808818B2 (pt)
KR (1) KR20100049649A (pt)
CN (1) CN101874283B (pt)
BR (1) BRPI0815400A2 (pt)
GB (2) GB0715879D0 (pt)
WO (1) WO2009022184A2 (pt)

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EP2306489A1 (en) * 2009-10-02 2011-04-06 Applied Materials, Inc. Method for coating a substrate and coater
EP2431995A1 (en) * 2010-09-17 2012-03-21 Asociacion de la Industria Navarra (AIN) Ionisation device
CN104094377B (zh) * 2011-12-19 2016-05-11 弗劳恩霍弗实用研究促进协会 用于产生空心阴极电弧放电等离子体的装置
CN102936717B (zh) * 2012-11-08 2014-06-11 温州职业技术学院 一种紧凑高效的准扩散弧冷阴极弧源
CN102936718B (zh) * 2012-11-08 2014-07-09 温州职业技术学院 一种多结构耦合磁场适应型旋转弧离子镀装置
CN103184422B (zh) * 2013-03-25 2015-07-22 肇庆市腾胜真空技术工程有限公司 Tco透明导电膜的低温沉积装置及工艺
KR102152949B1 (ko) * 2013-04-24 2020-09-08 삼성디스플레이 주식회사 스퍼터링 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법
KR102177209B1 (ko) * 2013-07-24 2020-11-11 삼성디스플레이 주식회사 스퍼터링 장치 및 이를 이용한 박막 형성 방법
KR102177208B1 (ko) * 2013-07-25 2020-11-11 삼성디스플레이 주식회사 스퍼터링 시스템과, 이를 이용한 디스플레이 장치의 제조 방법
KR102245606B1 (ko) 2015-01-14 2021-04-28 삼성디스플레이 주식회사 마그네트론 증착 장치
US9812296B2 (en) 2015-02-03 2017-11-07 Cardinal Cg Company Sputtering apparatus including gas distribution system
WO2016202468A1 (de) * 2015-06-16 2016-12-22 Schneider Gmbh & Co. Kg Vorrichtung, verfahren und verwendung zur beschichtung von linsen
CN105369206A (zh) * 2015-12-03 2016-03-02 凯盛光伏材料有限公司 一种制备柔性衬底薄膜的磁控溅射装置
KR102636365B1 (ko) * 2016-05-25 2024-02-15 삼성디스플레이 주식회사 스퍼터링 장치 및 이를 이용한 스퍼터링 방법
WO2018068833A1 (en) * 2016-10-11 2018-04-19 Applied Materials, Inc. Magnet arrangement for a sputter deposition source and magnetron sputter deposition source
CN106637103B (zh) * 2016-10-12 2019-04-05 南京华东电子信息科技股份有限公司 一种igzo成膜设备的阳极稳定装置
DE102016125273A1 (de) 2016-12-14 2018-06-14 Schneider Gmbh & Co. Kg Anlage, Verfahren und Träger zur Beschichtung von Brillengläsern
GB201713385D0 (en) 2017-08-21 2017-10-04 Gencoa Ltd Ion-enhanced deposition
CN109425916A (zh) * 2017-08-24 2019-03-05 中央大学 光学膜、光学膜组件及其制造方法
JP6673590B2 (ja) * 2017-12-27 2020-03-25 キヤノントッキ株式会社 スパッタ成膜装置
CN108559966A (zh) * 2018-07-26 2018-09-21 北京铂阳顶荣光伏科技有限公司 一种阳极结构及磁控溅射装置
DE102018213534A1 (de) 2018-08-10 2020-02-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung
WO2020198012A1 (en) 2019-03-26 2020-10-01 Board Of Trustees Of Michigan State University Single beam plasma source
KR102648667B1 (ko) * 2019-04-03 2024-03-15 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착 소스, 스퍼터 증착 장치, 및 스퍼터 증착 소스에 전력공급하는 방법
DE102020201829A1 (de) 2020-02-13 2021-08-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung mit zusätzlichen Plasmaquellen
US20230097276A1 (en) * 2020-03-13 2023-03-30 Evatec Ag Apparatus and process with a dc-pulsed cathode array
DE102020212353A1 (de) 2020-09-30 2022-03-31 Carl Zeiss Smt Gmbh Verfahren zur Herstellung eines optischen Elements, optisches Element, Vorrichtung zur Herstellung eines optischen Elements, Sekundärgas und Projektionsbelichtungsanlage
EP4324015A1 (en) * 2021-04-16 2024-02-21 Evatec AG Sputtering apparatus for coating of 3d-objects
CN116288218B (zh) * 2023-05-16 2023-08-22 上海治臻新能源股份有限公司 一种溅射阴极及磁控溅射设备

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US4963239A (en) * 1988-01-29 1990-10-16 Hitachi, Ltd. Sputtering process and an apparatus for carrying out the same
US5047131A (en) * 1989-11-08 1991-09-10 The Boc Group, Inc. Method for coating substrates with silicon based compounds
WO1992001081A1 (en) * 1990-07-06 1992-01-23 The Boc Group, Inc. Method and apparatus for co-sputtering and cross-sputtering homogeneous films
US5364518A (en) * 1991-05-28 1994-11-15 Leybold Aktiengesellschaft Magnetron cathode for a rotating target
US5616225A (en) * 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
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JP2001200357A (ja) * 2000-01-19 2001-07-24 Nippon Sheet Glass Co Ltd 成膜装置と成膜方法
DE10145201C1 (de) 2001-09-13 2002-11-21 Fraunhofer Ges Forschung Einrichtung zum Beschichten von Substraten mit gekrümmter Oberfläche durch Pulsmagnetron-Zerstäuben
DE10213043B4 (de) * 2002-03-22 2008-10-30 Von Ardenne Anlagentechnik Gmbh Rohrmagnetron und seine Verwendung
JP2005133110A (ja) * 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置
US7718042B2 (en) * 2004-03-12 2010-05-18 Oc Oerlikon Balzers Ag Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source
US7993496B2 (en) * 2004-07-01 2011-08-09 Cardinal Cg Company Cylindrical target with oscillating magnet for magnetron sputtering
DE502005000983D1 (de) * 2005-05-13 2007-08-16 Applied Materials Gmbh & Co Kg Verfahren zum Betreiben einer Sputterkathode mit einem Target
CA2626915A1 (en) * 2005-10-24 2007-05-03 Soleras Ltd. Cathode incorporating fixed or rotating target in combination with a moving magnet assembly and applications thereof

Also Published As

Publication number Publication date
WO2009022184A2 (en) 2009-02-19
JP2010537041A (ja) 2010-12-02
JP4808818B2 (ja) 2011-11-02
CN101874283B (zh) 2013-07-10
US9028660B2 (en) 2015-05-12
GB0715879D0 (en) 2007-09-26
GB2454964A (en) 2009-05-27
GB0814867D0 (en) 2008-09-17
US20110127157A1 (en) 2011-06-02
WO2009022184A3 (en) 2009-04-09
EP2186108A2 (en) 2010-05-19
KR20100049649A (ko) 2010-05-12
EP2186108B1 (en) 2015-07-29
CN101874283A (zh) 2010-10-27
GB2454964B (en) 2010-06-02

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]