BRPI0821941A2 - Sistema para manusear peças a serem trabalhadas em câmaras - Google Patents

Sistema para manusear peças a serem trabalhadas em câmaras

Info

Publication number
BRPI0821941A2
BRPI0821941A2 BRPI0821941-9A BRPI0821941A BRPI0821941A2 BR PI0821941 A2 BRPI0821941 A2 BR PI0821941A2 BR PI0821941 A BRPI0821941 A BR PI0821941A BR PI0821941 A2 BRPI0821941 A2 BR PI0821941A2
Authority
BR
Brazil
Prior art keywords
worked
cameras
handling parts
handling
parts
Prior art date
Application number
BRPI0821941-9A
Other languages
English (en)
Inventor
Chunwah Fan
Original Assignee
Dongguan Anwell Digital Mach
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Anwell Digital Mach filed Critical Dongguan Anwell Digital Mach
Publication of BRPI0821941A2 publication Critical patent/BRPI0821941A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311—Horizontal transfer of a batch of workpieces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/17—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] specially adapted for supporting large square shaped substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
BRPI0821941-9A 2008-01-01 2008-12-31 Sistema para manusear peças a serem trabalhadas em câmaras BRPI0821941A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/968,188 US20090169341A1 (en) 2008-01-01 2008-01-01 Method and system for handling objects in chambers
PCT/CN2008/073904 WO2009082983A1 (en) 2008-01-01 2008-12-31 System and process for conveying workpieces into a chamber

Publications (1)

Publication Number Publication Date
BRPI0821941A2 true BRPI0821941A2 (pt) 2015-06-16

Family

ID=40798659

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821941-9A BRPI0821941A2 (pt) 2008-01-01 2008-12-31 Sistema para manusear peças a serem trabalhadas em câmaras

Country Status (7)

Country Link
US (1) US20090169341A1 (pt)
EP (1) EP2234149A4 (pt)
CN (1) CN101960581B (pt)
AU (1) AU2008342394B2 (pt)
BR (1) BRPI0821941A2 (pt)
TW (1) TW200931579A (pt)
WO (1) WO2009082983A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101999173B (zh) * 2008-06-06 2013-02-13 株式会社爱发科 薄膜太阳能电池制造装置
CN101999172B (zh) * 2008-06-06 2012-10-10 株式会社爱发科 薄膜太阳能电池制造装置
CN103774119A (zh) * 2012-10-19 2014-05-07 陕西拓日新能源科技有限公司 用于非晶硅薄膜均匀镀膜的沉积夹具
CN104649045B (zh) * 2014-12-25 2016-12-07 杭州科雷机电工业有限公司 一种四向输送模块及其联网式印版自动分流处理方法
CN108217166B (zh) * 2018-01-15 2021-01-08 京东方科技集团股份有限公司 一种uv固化传送方法和系统
CN113658890B (zh) * 2021-08-17 2023-09-29 长鑫存储技术有限公司 提高半导体设备产能的方法和系统
CN120575147B (zh) * 2025-08-01 2025-11-18 湘潭宏大真空技术股份有限公司 真空镀膜生产线的转运系统

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4289598A (en) * 1980-05-03 1981-09-15 Technics, Inc. Plasma reactor and method therefor
US4664890A (en) * 1984-06-22 1987-05-12 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Glow-discharge decomposition apparatus
US4618477A (en) * 1985-01-17 1986-10-21 International Business Machines Corporation Uniform plasma for drill smear removal reactor
US5021138A (en) * 1985-01-17 1991-06-04 Babu Suryadevara V Side source center sink plasma reactor
KR930003136B1 (ko) * 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4840702A (en) * 1987-12-29 1989-06-20 Action Technologies, Inc. Apparatus and method for plasma treating of circuit boards
JP2948842B2 (ja) * 1989-11-24 1999-09-13 日本真空技術株式会社 インライン型ｃｖｄ装置
JPH08148451A (ja) * 1994-11-18 1996-06-07 Komatsu Electron Metals Co Ltd 半導体ウェーハ自動剥し装置
US6245189B1 (en) * 1994-12-05 2001-06-12 Nordson Corporation High Throughput plasma treatment system
JPH11238785A (ja) * 1998-02-19 1999-08-31 Sharp Corp 基板処理装置及び基板処理方法
JP3506208B2 (ja) * 1998-02-20 2004-03-15 三菱住友シリコン株式会社 ウェーハケース
JP3624113B2 (ja) * 1998-03-13 2005-03-02 キヤノン株式会社 プラズマ処理方法
WO2001019144A1 (en) * 1999-09-09 2001-03-15 Anelva Corporation Inner-electrode plasma processing apparatus and method of plasma processing
JP3970815B2 (ja) * 2002-11-12 2007-09-05 シャープ株式会社 半導体素子製造装置
US6767590B1 (en) * 2002-12-18 2004-07-27 Ronald M. Kubacki Poled plasma deposition
JP2004288984A (ja) * 2003-03-24 2004-10-14 Sharp Corp 成膜装置及び成膜方法
WO2005045873A2 (en) * 2003-10-28 2005-05-19 Nordson Corporation Plasma processing system and plasma treatment process
TW200737533A (en) * 2005-12-21 2007-10-01 Nat Science And Technology Dev Agency Low-cost and high performance solar cell manufacturing machine

Also Published As

Publication number Publication date
CN101960581A (zh) 2011-01-26
TW200931579A (en) 2009-07-16
EP2234149A4 (en) 2013-04-03
AU2008342394A1 (en) 2009-07-09
AU2008342394B2 (en) 2012-01-12
CN101960581B (zh) 2012-07-25
EP2234149A1 (en) 2010-09-29
WO2009082983A1 (en) 2009-07-09
US20090169341A1 (en) 2009-07-02

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2343 DE 01-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.